Anomalous switching in submicrometer magnetic tunnel junction arrays arising from magnetic vortex and domain wall pinning

Wanjun Park, I. J. Hwang, Taewan Kim, Kyoung Jin Lee, Young-geun Kim

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The switching characteristics of submicrometer-sized single magnetic tunnel junction (MTJ) cells with direct measurements of magnetoresistance (MR) curves was investigated. The purpose of the study was to improve the cell selectivity for high-density magnetoresistive random access memory (MRAM) writing. It was found that the magnetic vortex and domain wall pinning effects on anomalous switching of each magnetic tunnel junction can be distinguished by remanent states. The data from the experiment indicated that the low saturation magnetization of the free layer increases domain wall pinning and decreases trapped magnetization vortices.

Original languageEnglish
Pages (from-to)1748-1750
Number of pages3
JournalJournal of Applied Physics
Volume96
Issue number3
DOIs
Publication statusPublished - 2004 Aug 1

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tunnel junctions
domain wall
vortices
magnetization
random access memory
cells
selectivity
saturation
curves

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Anomalous switching in submicrometer magnetic tunnel junction arrays arising from magnetic vortex and domain wall pinning. / Park, Wanjun; Hwang, I. J.; Kim, Taewan; Lee, Kyoung Jin; Kim, Young-geun.

In: Journal of Applied Physics, Vol. 96, No. 3, 01.08.2004, p. 1748-1750.

Research output: Contribution to journalArticle

@article{7909197cc14a451a87e532d10e1ae4f4,
title = "Anomalous switching in submicrometer magnetic tunnel junction arrays arising from magnetic vortex and domain wall pinning",
abstract = "The switching characteristics of submicrometer-sized single magnetic tunnel junction (MTJ) cells with direct measurements of magnetoresistance (MR) curves was investigated. The purpose of the study was to improve the cell selectivity for high-density magnetoresistive random access memory (MRAM) writing. It was found that the magnetic vortex and domain wall pinning effects on anomalous switching of each magnetic tunnel junction can be distinguished by remanent states. The data from the experiment indicated that the low saturation magnetization of the free layer increases domain wall pinning and decreases trapped magnetization vortices.",
author = "Wanjun Park and Hwang, {I. J.} and Taewan Kim and Lee, {Kyoung Jin} and Young-geun Kim",
year = "2004",
month = "8",
day = "1",
doi = "10.1063/1.1765852",
language = "English",
volume = "96",
pages = "1748--1750",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "3",

}

TY - JOUR

T1 - Anomalous switching in submicrometer magnetic tunnel junction arrays arising from magnetic vortex and domain wall pinning

AU - Park, Wanjun

AU - Hwang, I. J.

AU - Kim, Taewan

AU - Lee, Kyoung Jin

AU - Kim, Young-geun

PY - 2004/8/1

Y1 - 2004/8/1

N2 - The switching characteristics of submicrometer-sized single magnetic tunnel junction (MTJ) cells with direct measurements of magnetoresistance (MR) curves was investigated. The purpose of the study was to improve the cell selectivity for high-density magnetoresistive random access memory (MRAM) writing. It was found that the magnetic vortex and domain wall pinning effects on anomalous switching of each magnetic tunnel junction can be distinguished by remanent states. The data from the experiment indicated that the low saturation magnetization of the free layer increases domain wall pinning and decreases trapped magnetization vortices.

AB - The switching characteristics of submicrometer-sized single magnetic tunnel junction (MTJ) cells with direct measurements of magnetoresistance (MR) curves was investigated. The purpose of the study was to improve the cell selectivity for high-density magnetoresistive random access memory (MRAM) writing. It was found that the magnetic vortex and domain wall pinning effects on anomalous switching of each magnetic tunnel junction can be distinguished by remanent states. The data from the experiment indicated that the low saturation magnetization of the free layer increases domain wall pinning and decreases trapped magnetization vortices.

UR - http://www.scopus.com/inward/record.url?scp=4043157146&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4043157146&partnerID=8YFLogxK

U2 - 10.1063/1.1765852

DO - 10.1063/1.1765852

M3 - Article

AN - SCOPUS:4043157146

VL - 96

SP - 1748

EP - 1750

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 3

ER -