Anomalous switching in submicrometer magnetic tunnel junction arrays arising from magnetic vortex and domain wall pinning

Wanjun Park, I. J. Hwang, Taewan Kim, Kyoung Jin Lee, Young-geun Kim

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16 Citations (Scopus)


The switching characteristics of submicrometer-sized single magnetic tunnel junction (MTJ) cells with direct measurements of magnetoresistance (MR) curves was investigated. The purpose of the study was to improve the cell selectivity for high-density magnetoresistive random access memory (MRAM) writing. It was found that the magnetic vortex and domain wall pinning effects on anomalous switching of each magnetic tunnel junction can be distinguished by remanent states. The data from the experiment indicated that the low saturation magnetization of the free layer increases domain wall pinning and decreases trapped magnetization vortices.

Original languageEnglish
Pages (from-to)1748-1750
Number of pages3
JournalJournal of Applied Physics
Issue number3
Publication statusPublished - 2004 Aug 1


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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