Anomalous Te Inclusion Size and Distribution in CdZnTeSe

S. Hwang; H. Yu; A. E. Bolotnikov; R. B. James; K. Kim

doi:10.1109/TNS.2019.2944969

Anomalous Te Inclusion Size and Distribution in CdZnTeSe

S. Hwang, H. Yu, A. E. Bolotnikov, R. B. James, K. Kim

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The effect of selenium in CdZnTe was investigated by characterizing the Cd_0.9Zn_0.1Te_0.98Se_0.02 crystal. The bandgap of Cd_0.9Zn_0.1Te_0.98Se_0.02 is smaller than Cd_0.9Zn_0.1Te. In addition, its value in ingot follows the zinc-segregation tendency than that of selenium. There was a recognizable difference in the amounts of compensating dopants, the distribution of Te inclusions, and the performance of the detector. The amounts of indium doping for the compensation were reduced by the addition of selenium, which provided the highest partial pressure in the melts. Thus, the generation of Cd vacancies, which is a native defect in CdZnTe, was prevented. In addition, the size of Te inclusions varied from the tip, middle, and heel of the CdZnTeSe ingot. The addition of selenium may change the thermal conductivity of CdZnTeSe melts, which is responsible for reducing the bulging of the retrograde solidus line near stoichiometry. The planar CdZnTeSe detector showed a 59.5-keV gamma peak for Am-241 with an 11% of energy resolution.

Original language	English
Article number	8854136
Pages (from-to)	2329-2332
Number of pages	4
Journal	IEEE Transactions on Nuclear Science
Volume	66
Issue number	11
DOIs	https://doi.org/10.1109/TNS.2019.2944969
Publication status	Published - 2019 Nov

Keywords

CdZnTe
CdZnTeSe
Te inclusions
pulse height spectra
selenium

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2019.2944969

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title = "Anomalous Te Inclusion Size and Distribution in CdZnTeSe",

abstract = "The effect of selenium in CdZnTe was investigated by characterizing the Cd0.9Zn0.1Te0.98Se0.02 crystal. The bandgap of Cd0.9Zn0.1Te0.98Se0.02 is smaller than Cd0.9Zn0.1Te. In addition, its value in ingot follows the zinc-segregation tendency than that of selenium. There was a recognizable difference in the amounts of compensating dopants, the distribution of Te inclusions, and the performance of the detector. The amounts of indium doping for the compensation were reduced by the addition of selenium, which provided the highest partial pressure in the melts. Thus, the generation of Cd vacancies, which is a native defect in CdZnTe, was prevented. In addition, the size of Te inclusions varied from the tip, middle, and heel of the CdZnTeSe ingot. The addition of selenium may change the thermal conductivity of CdZnTeSe melts, which is responsible for reducing the bulging of the retrograde solidus line near stoichiometry. The planar CdZnTeSe detector showed a 59.5-keV gamma peak for Am-241 with an 11% of energy resolution.",

keywords = "CdZnTe, CdZnTeSe, Te inclusions, pulse height spectra, selenium",

author = "S. Hwang and H. Yu and Bolotnikov, {A. E.} and James, {R. B.} and K. Kim",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean Government (MSIP) under Grant NRF- 2018M2A2B3A01072384. Funding Information: Manuscript received June 2, 2019; revised July 19, 2019 and September 17, 2019; accepted September 27, 2019. Date of publication October 1, 2019; date of current version November 18, 2019. This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean Government (MSIP) under Grant NRF-2018M2A2B3A01072384. Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2019",

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language = "English",

volume = "66",

pages = "2329--2332",

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AU - Hwang, S.

AU - Yu, H.

AU - Bolotnikov, A. E.

AU - James, R. B.

AU - Kim, K.

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean Government (MSIP) under Grant NRF- 2018M2A2B3A01072384. Funding Information: Manuscript received June 2, 2019; revised July 19, 2019 and September 17, 2019; accepted September 27, 2019. Date of publication October 1, 2019; date of current version November 18, 2019. This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean Government (MSIP) under Grant NRF-2018M2A2B3A01072384. Publisher Copyright: © 1963-2012 IEEE.

PY - 2019/11

Y1 - 2019/11

N2 - The effect of selenium in CdZnTe was investigated by characterizing the Cd0.9Zn0.1Te0.98Se0.02 crystal. The bandgap of Cd0.9Zn0.1Te0.98Se0.02 is smaller than Cd0.9Zn0.1Te. In addition, its value in ingot follows the zinc-segregation tendency than that of selenium. There was a recognizable difference in the amounts of compensating dopants, the distribution of Te inclusions, and the performance of the detector. The amounts of indium doping for the compensation were reduced by the addition of selenium, which provided the highest partial pressure in the melts. Thus, the generation of Cd vacancies, which is a native defect in CdZnTe, was prevented. In addition, the size of Te inclusions varied from the tip, middle, and heel of the CdZnTeSe ingot. The addition of selenium may change the thermal conductivity of CdZnTeSe melts, which is responsible for reducing the bulging of the retrograde solidus line near stoichiometry. The planar CdZnTeSe detector showed a 59.5-keV gamma peak for Am-241 with an 11% of energy resolution.

AB - The effect of selenium in CdZnTe was investigated by characterizing the Cd0.9Zn0.1Te0.98Se0.02 crystal. The bandgap of Cd0.9Zn0.1Te0.98Se0.02 is smaller than Cd0.9Zn0.1Te. In addition, its value in ingot follows the zinc-segregation tendency than that of selenium. There was a recognizable difference in the amounts of compensating dopants, the distribution of Te inclusions, and the performance of the detector. The amounts of indium doping for the compensation were reduced by the addition of selenium, which provided the highest partial pressure in the melts. Thus, the generation of Cd vacancies, which is a native defect in CdZnTe, was prevented. In addition, the size of Te inclusions varied from the tip, middle, and heel of the CdZnTeSe ingot. The addition of selenium may change the thermal conductivity of CdZnTeSe melts, which is responsible for reducing the bulging of the retrograde solidus line near stoichiometry. The planar CdZnTeSe detector showed a 59.5-keV gamma peak for Am-241 with an 11% of energy resolution.

KW - CdZnTe

KW - CdZnTeSe

KW - Te inclusions

KW - pulse height spectra

KW - selenium

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JO - IEEE Transactions on Nuclear Science

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ER -

Anomalous Te Inclusion Size and Distribution in CdZnTeSe

Abstract

Keywords

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