Anti-parallel spin interaction between the carriers in coupled quantum dots

S. Lee, J. K. Furdyna, M. Dobrowolska

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

We have performed magneto-photoluminescence (PL) experiments on a self-assembled coupled double quantum dot (QD) system consisting of adjacent CdSe and CdZnSe QD layers. We have observed well separated two PL peaks in such a double layer QD system, corresponding to the CdSe and the CdZnSe QDs. The excitation power dependence of relative PL intensity of the two QD structures clearly shows characteristics of coupled system. This system also exhibits significantly different degree of polarization between CdSe and CdZnSe QD when a magnetic field applied, in contrast to the behavior shown by single-layer CdSe or CdZnSe QD systems, which show nearly identical polarization dependence on the field. The observed behavior was interpreted in terms anti-parallel spin interaction between carriers localized in pairs of QDs that are electronically coupled.

Original languageEnglish
Pages (from-to)447-450
Number of pages4
JournalInstitute of Physics Conference Series
Volume184
Publication statusPublished - 2005
Event31st International Symposium of Compound Semiconductors 2004 - Seoul, Korea, Republic of
Duration: 2004 Sep 122004 Dec 16

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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