Antiferromagnetic exchange coupling between GaMnAs layers separated by a nonmagnetic GaAs:Be spacer

J. Leiner, K. Tivakornsasithorn, X. Liu, J. K. Furdyna, M. Dobrowolska, B. J. Kirby, H. Lee, T. Yoo, Sanghoon Lee

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Abstract

Interlayer exchange coupling (IEC) between two Ga0.95Mn 0.05As layers separated by Be-doped GaAs spacers was investigated using magnetometry and neutron scattering measurements, which indicated the presence of robust antiferromagnetic IEC under certain conditions. We argue that the observed behavior arises from a competition between the IEC field and magnetocrystalline anisotropy fields intrinsic to GaMnAs layers. We estimate the magnitude of the IEC field and show how it decays with increasing temperature.

Original languageEnglish
Article number07C307
JournalJournal of Applied Physics
Volume109
Issue number7
DOIs
Publication statusPublished - 2011 Apr 1

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Leiner, J., Tivakornsasithorn, K., Liu, X., Furdyna, J. K., Dobrowolska, M., Kirby, B. J., Lee, H., Yoo, T., & Lee, S. (2011). Antiferromagnetic exchange coupling between GaMnAs layers separated by a nonmagnetic GaAs:Be spacer. Journal of Applied Physics, 109(7), [07C307]. https://doi.org/10.1063/1.3536669