Abstract
Interlayer exchange coupling (IEC) between two Ga0.95Mn 0.05As layers separated by Be-doped GaAs spacers was investigated using magnetometry and neutron scattering measurements, which indicated the presence of robust antiferromagnetic IEC under certain conditions. We argue that the observed behavior arises from a competition between the IEC field and magnetocrystalline anisotropy fields intrinsic to GaMnAs layers. We estimate the magnitude of the IEC field and show how it decays with increasing temperature.
| Original language | English |
|---|---|
| Article number | 07C307 |
| Journal | Journal of Applied Physics |
| Volume | 109 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2011 Apr 1 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Antiferromagnetic exchange coupling between GaMnAs layers separated by a nonmagnetic GaAs : Be spacer. / Leiner, J.; Tivakornsasithorn, K.; Liu, X.; Furdyna, J. K.; Dobrowolska, M.; Kirby, B. J.; Lee, H.; Yoo, T.; Lee, Sang Hoon.
In: Journal of Applied Physics, Vol. 109, No. 7, 07C307, 01.04.2011.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Antiferromagnetic exchange coupling between GaMnAs layers separated by a nonmagnetic GaAs
T2 - Be spacer
AU - Leiner, J.
AU - Tivakornsasithorn, K.
AU - Liu, X.
AU - Furdyna, J. K.
AU - Dobrowolska, M.
AU - Kirby, B. J.
AU - Lee, H.
AU - Yoo, T.
AU - Lee, Sang Hoon
PY - 2011/4/1
Y1 - 2011/4/1
N2 - Interlayer exchange coupling (IEC) between two Ga0.95Mn 0.05As layers separated by Be-doped GaAs spacers was investigated using magnetometry and neutron scattering measurements, which indicated the presence of robust antiferromagnetic IEC under certain conditions. We argue that the observed behavior arises from a competition between the IEC field and magnetocrystalline anisotropy fields intrinsic to GaMnAs layers. We estimate the magnitude of the IEC field and show how it decays with increasing temperature.
AB - Interlayer exchange coupling (IEC) between two Ga0.95Mn 0.05As layers separated by Be-doped GaAs spacers was investigated using magnetometry and neutron scattering measurements, which indicated the presence of robust antiferromagnetic IEC under certain conditions. We argue that the observed behavior arises from a competition between the IEC field and magnetocrystalline anisotropy fields intrinsic to GaMnAs layers. We estimate the magnitude of the IEC field and show how it decays with increasing temperature.
UR - http://www.scopus.com/inward/record.url?scp=79955446695&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79955446695&partnerID=8YFLogxK
U2 - 10.1063/1.3536669
DO - 10.1063/1.3536669
M3 - Article
AN - SCOPUS:79955446695
VL - 109
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 7
M1 - 07C307
ER -