Antiferromagnetic exchange coupling between GaMnAs layers separated by a nonmagnetic GaAs:Be spacer

J. Leiner; K. Tivakornsasithorn; X. Liu; J. K. Furdyna; M. Dobrowolska; B. J. Kirby; H. Lee; T. Yoo; Sanghoon Lee

doi:10.1063/1.3536669

Antiferromagnetic exchange coupling between GaMnAs layers separated by a nonmagnetic GaAs:Be spacer

J. Leiner, K. Tivakornsasithorn, X. Liu, J. K. Furdyna, M. Dobrowolska, B. J. Kirby, H. Lee, T. Yoo, Sanghoon Lee

Department of Physics

Research output: Contribution to journal › Article

7 Citations (Scopus)

Abstract

Interlayer exchange coupling (IEC) between two Ga_0.95Mn _0.05As layers separated by Be-doped GaAs spacers was investigated using magnetometry and neutron scattering measurements, which indicated the presence of robust antiferromagnetic IEC under certain conditions. We argue that the observed behavior arises from a competition between the IEC field and magnetocrystalline anisotropy fields intrinsic to GaMnAs layers. We estimate the magnitude of the IEC field and show how it decays with increasing temperature.

Original language	English
Article number	07C307
Journal	Journal of Applied Physics
Volume	109
Issue number	7
DOIs	https://doi.org/10.1063/1.3536669
Publication status	Published - 2011 Apr 1

ASJC Scopus subject areas

Physics and Astronomy(all)

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Leiner, J., Tivakornsasithorn, K., Liu, X., Furdyna, J. K., Dobrowolska, M., Kirby, B. J., Lee, H., Yoo, T., & Lee, S. (2011). Antiferromagnetic exchange coupling between GaMnAs layers separated by a nonmagnetic GaAs:Be spacer. Journal of Applied Physics, 109(7), [07C307]. https://doi.org/10.1063/1.3536669

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AU - Leiner, J.

AU - Tivakornsasithorn, K.

AU - Liu, X.

AU - Furdyna, J. K.

AU - Dobrowolska, M.

AU - Kirby, B. J.

AU - Lee, H.

AU - Yoo, T.

AU - Lee, Sanghoon

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N2 - Interlayer exchange coupling (IEC) between two Ga0.95Mn 0.05As layers separated by Be-doped GaAs spacers was investigated using magnetometry and neutron scattering measurements, which indicated the presence of robust antiferromagnetic IEC under certain conditions. We argue that the observed behavior arises from a competition between the IEC field and magnetocrystalline anisotropy fields intrinsic to GaMnAs layers. We estimate the magnitude of the IEC field and show how it decays with increasing temperature.

AB - Interlayer exchange coupling (IEC) between two Ga0.95Mn 0.05As layers separated by Be-doped GaAs spacers was investigated using magnetometry and neutron scattering measurements, which indicated the presence of robust antiferromagnetic IEC under certain conditions. We argue that the observed behavior arises from a competition between the IEC field and magnetocrystalline anisotropy fields intrinsic to GaMnAs layers. We estimate the magnitude of the IEC field and show how it decays with increasing temperature.

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