Antiferromagnetic Interlayer Exchange Coupling in Ferromagnetic GaMnAs/GaAs: Be Multilayers

Hakjoon Lee; Sangyeop Lee; Seonghoon Choi; Taehee Yoo; Sang Hoon Lee; Xinyu Liu; Jacek K. Furdyna

doi:10.1109/TMAG.2015.2438294

Antiferromagnetic Interlayer Exchange Coupling in Ferromagnetic GaMnAs/GaAs: Be Multilayers

Hakjoon Lee, Sangyeop Lee, Seonghoon Choi, Taehee Yoo, Sang Hoon Lee, Xinyu Liu, Jacek K. Furdyna

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Interlayer exchange coupling (IEC) between the GaMnAs layers in GaMnAs/GaAs:Be multilayer systems has been investigated using magnetotransport experiments. The observation of a stable antiparallel magnetization alignment state from the systems indicates the presence of antiferromagnetic (AFM) IEC between the GaMnAs layers. The transitions between parallel and antiparallel alignments of GaMnAs magnetic layers in the system were carefully investigated by measuring resistance change with increasing temperature under various bias magnetic fields. From the dependence of the transition temperature on bias fields, we have estimated the magnitude of AFM IEC and its temperature behavior of our GaMnAs/GaAs:Be multilayers.

Original language	English
Article number	7114296
Journal	IEEE Transactions on Magnetics
Volume	51
Issue number	11
DOIs	https://doi.org/10.1109/TMAG.2015.2438294
Publication status	Published - 2015 Nov 1
Externally published	Yes

Keywords

Interlayer exchange coupling
Magnetic multilayers
Magnetoresistance

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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title = "Antiferromagnetic Interlayer Exchange Coupling in Ferromagnetic GaMnAs/GaAs: Be Multilayers",

abstract = "Interlayer exchange coupling (IEC) between the GaMnAs layers in GaMnAs/GaAs:Be multilayer systems has been investigated using magnetotransport experiments. The observation of a stable antiparallel magnetization alignment state from the systems indicates the presence of antiferromagnetic (AFM) IEC between the GaMnAs layers. The transitions between parallel and antiparallel alignments of GaMnAs magnetic layers in the system were carefully investigated by measuring resistance change with increasing temperature under various bias magnetic fields. From the dependence of the transition temperature on bias fields, we have estimated the magnitude of AFM IEC and its temperature behavior of our GaMnAs/GaAs:Be multilayers.",

keywords = "Interlayer exchange coupling, Magnetic multilayers, Magnetoresistance",

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T1 - Antiferromagnetic Interlayer Exchange Coupling in Ferromagnetic GaMnAs/GaAs

T2 - Be Multilayers

AU - Lee, Hakjoon

AU - Lee, Sangyeop

AU - Choi, Seonghoon

AU - Yoo, Taehee

AU - Lee, Sang Hoon

AU - Liu, Xinyu

AU - Furdyna, Jacek K.

PY - 2015/11/1

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N2 - Interlayer exchange coupling (IEC) between the GaMnAs layers in GaMnAs/GaAs:Be multilayer systems has been investigated using magnetotransport experiments. The observation of a stable antiparallel magnetization alignment state from the systems indicates the presence of antiferromagnetic (AFM) IEC between the GaMnAs layers. The transitions between parallel and antiparallel alignments of GaMnAs magnetic layers in the system were carefully investigated by measuring resistance change with increasing temperature under various bias magnetic fields. From the dependence of the transition temperature on bias fields, we have estimated the magnitude of AFM IEC and its temperature behavior of our GaMnAs/GaAs:Be multilayers.

AB - Interlayer exchange coupling (IEC) between the GaMnAs layers in GaMnAs/GaAs:Be multilayer systems has been investigated using magnetotransport experiments. The observation of a stable antiparallel magnetization alignment state from the systems indicates the presence of antiferromagnetic (AFM) IEC between the GaMnAs layers. The transitions between parallel and antiparallel alignments of GaMnAs magnetic layers in the system were carefully investigated by measuring resistance change with increasing temperature under various bias magnetic fields. From the dependence of the transition temperature on bias fields, we have estimated the magnitude of AFM IEC and its temperature behavior of our GaMnAs/GaAs:Be multilayers.

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