Abstract
Interlayer exchange coupling (IEC) between the GaMnAs layers in GaMnAs/GaAs:Be multilayer systems has been investigated using magnetotransport experiments. The observation of a stable antiparallel magnetization alignment state from the systems indicates the presence of antiferromagnetic (AFM) IEC between the GaMnAs layers. The transitions between parallel and antiparallel alignments of GaMnAs magnetic layers in the system were carefully investigated by measuring resistance change with increasing temperature under various bias magnetic fields. From the dependence of the transition temperature on bias fields, we have estimated the magnitude of AFM IEC and its temperature behavior of our GaMnAs/GaAs:Be multilayers.
| Original language | English |
|---|---|
| Article number | 7114296 |
| Journal | IEEE Transactions on Magnetics |
| Volume | 51 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2015 Nov 1 |
| Externally published | Yes |
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Keywords
- Interlayer exchange coupling
- Magnetic multilayers
- Magnetoresistance
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
Antiferromagnetic Interlayer Exchange Coupling in Ferromagnetic GaMnAs/GaAs : Be Multilayers. / Lee, Hakjoon; Lee, Sangyeop; Choi, Seonghoon; Yoo, Taehee; Lee, Sang Hoon; Liu, Xinyu; Furdyna, Jacek K.
In: IEEE Transactions on Magnetics, Vol. 51, No. 11, 7114296, 01.11.2015.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Antiferromagnetic Interlayer Exchange Coupling in Ferromagnetic GaMnAs/GaAs
T2 - Be Multilayers
AU - Lee, Hakjoon
AU - Lee, Sangyeop
AU - Choi, Seonghoon
AU - Yoo, Taehee
AU - Lee, Sang Hoon
AU - Liu, Xinyu
AU - Furdyna, Jacek K.
PY - 2015/11/1
Y1 - 2015/11/1
N2 - Interlayer exchange coupling (IEC) between the GaMnAs layers in GaMnAs/GaAs:Be multilayer systems has been investigated using magnetotransport experiments. The observation of a stable antiparallel magnetization alignment state from the systems indicates the presence of antiferromagnetic (AFM) IEC between the GaMnAs layers. The transitions between parallel and antiparallel alignments of GaMnAs magnetic layers in the system were carefully investigated by measuring resistance change with increasing temperature under various bias magnetic fields. From the dependence of the transition temperature on bias fields, we have estimated the magnitude of AFM IEC and its temperature behavior of our GaMnAs/GaAs:Be multilayers.
AB - Interlayer exchange coupling (IEC) between the GaMnAs layers in GaMnAs/GaAs:Be multilayer systems has been investigated using magnetotransport experiments. The observation of a stable antiparallel magnetization alignment state from the systems indicates the presence of antiferromagnetic (AFM) IEC between the GaMnAs layers. The transitions between parallel and antiparallel alignments of GaMnAs magnetic layers in the system were carefully investigated by measuring resistance change with increasing temperature under various bias magnetic fields. From the dependence of the transition temperature on bias fields, we have estimated the magnitude of AFM IEC and its temperature behavior of our GaMnAs/GaAs:Be multilayers.
KW - Interlayer exchange coupling
KW - Magnetic multilayers
KW - Magnetoresistance
UR - http://www.scopus.com/inward/record.url?scp=84946110400&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84946110400&partnerID=8YFLogxK
U2 - 10.1109/TMAG.2015.2438294
DO - 10.1109/TMAG.2015.2438294
M3 - Article
VL - 51
JO - IEEE Transactions on Magnetics
JF - IEEE Transactions on Magnetics
SN - 0018-9464
IS - 11
M1 - 7114296
ER -