Applications of TMR devices in solid state circuits and systems

Yiran Chen, Hai Li, Xiaobin Wang, Jongsun Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Spintronic devices have recently attracted significant attentions in solid state circuit society as a promising device in the applications of nonvolatile memory and emerging circuit design, i.e., memristor-based system. In this paper, we introduce Tunneling magnetoresistance (TMR) device - a popular spintronic device structure and its applications in 1) multi-level cell memory design; 2) memristive devices (memristor); and 3) a special circuit design example - nondestructive self-reference sensing technology.

Original languageEnglish
Title of host publication2010 International SoC Design Conference, ISOCC 2010
Pages252-255
Number of pages4
DOIs
Publication statusPublished - 2010
Event2010 International SoC Design Conference, ISOCC 2010 - Incheon, Korea, Republic of
Duration: 2010 Nov 222010 Nov 23

Publication series

Name2010 International SoC Design Conference, ISOCC 2010

Other

Other2010 International SoC Design Conference, ISOCC 2010
CountryKorea, Republic of
CityIncheon
Period10/11/2210/11/23

Keywords

  • Magnetic memory, memristor
  • Magnetic tunneling junction
  • Spin-transfer torque
  • Spintronic memory

ASJC Scopus subject areas

  • Hardware and Architecture

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  • Cite this

    Chen, Y., Li, H., Wang, X., & Park, J. (2010). Applications of TMR devices in solid state circuits and systems. In 2010 International SoC Design Conference, ISOCC 2010 (pp. 252-255). [5682923] (2010 International SoC Design Conference, ISOCC 2010). https://doi.org/10.1109/SOCDC.2010.5682923