TY - GEN
T1 - Approaches to enhance the performance of SiGe imagers operating near 130 GHz and 300 GHz
AU - Rieh, Jae Sung
AU - Yoon, Daekeun
AU - Yun, Jongwon
AU - Song, Kiryong
AU - Kim, Jungsoo
AU - Kim, Sooyeon
AU - Yoo, Junghwan
AU - Kaynak, Mehmet
AU - Tillack, Bernd
N1 - Publisher Copyright:
© 2016 IEEE.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2016/9/27
Y1 - 2016/9/27
N2 - A comparison is made on high-frequency SiGe imagers to investigate the performance enhancement with circuit-level approaches: employing a front-end low noise amplifier (LNA) and employing heterodyne topology. Two imagers operating near 130 GHz, one with and the other without an LNA, were compared for the responsivity and the noise equivalent power (NEP). Also, two imagers operating near 300 GHz, one in direct and the other in heterodyne topology, were compared for the same parameters. Inserting a front-end LNA has led to changes in the peak responsivity and the minimum NEP with a factor of 63.5 and 0.011, respectively, near 130 GHz. Employing heterodyne topology for the 300 GHz imager resulted in changes with a factor of 52.8 and 0.18 for the same parameters.
AB - A comparison is made on high-frequency SiGe imagers to investigate the performance enhancement with circuit-level approaches: employing a front-end low noise amplifier (LNA) and employing heterodyne topology. Two imagers operating near 130 GHz, one with and the other without an LNA, were compared for the responsivity and the noise equivalent power (NEP). Also, two imagers operating near 300 GHz, one in direct and the other in heterodyne topology, were compared for the same parameters. Inserting a front-end LNA has led to changes in the peak responsivity and the minimum NEP with a factor of 63.5 and 0.011, respectively, near 130 GHz. Employing heterodyne topology for the 300 GHz imager resulted in changes with a factor of 52.8 and 0.18 for the same parameters.
KW - heterojunction bipolar transistors
KW - imaging
KW - receivers
KW - silicon germanium
KW - terahertz
UR - http://www.scopus.com/inward/record.url?scp=84994784134&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84994784134&partnerID=8YFLogxK
U2 - 10.1109/RFIT.2016.7578163
DO - 10.1109/RFIT.2016.7578163
M3 - Conference contribution
AN - SCOPUS:84994784134
T3 - RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology
BT - RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2016
Y2 - 24 August 2016 through 26 August 2016
ER -