Area and Energy Efficient Joint 2T SOT-MRAM-Based on Diffusion Region Sharing with Adjacent Cells

Yunho Jang, Jongsun Park

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

In this brief, we present a novel low area joint 2T spin orbit torque magnetic random access memory (SOT-MRAM) cell architecture. The proposed joint 2T cell achieves up to 15 % of SOT-MRAM cell area reduction by sharing the diffusion regions of transistors between adjacent cells. In addition, the small bit-line capacitance of the proposed SOT-MRAM can lead to 27% read energy reduction in comparison to the conventional SOT-MRAM. When the proposed 1 MB SOT-MRAM is used as L2 cache of X86 processor, the gem5 simulation results show the average of 18% dynamic energy savings in various workloads of SPEC2006 benchmarks.

Original languageEnglish
Pages (from-to)1622-1626
Number of pages5
JournalIEEE Transactions on Circuits and Systems II: Express Briefs
Volume69
Issue number3
DOIs
Publication statusPublished - 2022 Mar 1

Keywords

  • Spin orbit torque magnetic random access memory (SOT-MRAM)
  • cache
  • memory cell area
  • memory cell structure
  • memory operation energy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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