Area-Selective Atomic Layer Deposition Using Si Precursors as Inhibitors

Rizwan Khan, Bonggeun Shong, Byeong Guk Ko, Jae Kwang Lee, Hyunsoo Lee, Jeong Young Park, Il Kwon Oh, Shimeles Shumi Raya, Hyun Min Hong, Kwun Bum Chung, Erik J. Luber, Yoon Seok Kim, Chul-Ho Lee, Woo Hee Kim, Han Bo Ram Lee

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Short-chain aminosilanes, namely, bis(N,N-dimethylamino)dimethylsilane (DMADMS) and (N,N-dimethylamino)trimethylsilane (DMATMS), have been used as Si precursors for atomic layer deposition (ALD) of SiO2. In this work, the DMADMS and DMATMS Si precursors are utilized as inhibitors for area-selective ALD (AS-ALD). The inhibitors selectively adsorb on a SiO2 surface but not on H-Si, so that SiO2 becomes selectively deactivated toward subsequent ALD. The deactivation of the SiO2 surface by the inhibitors was investigated using various experimental and theoretical methods, including surface potential measurements, spectroscopic ellipsometry, and X-ray photoelectron spectroscopy. Better inhibition was observed for ALD of Ru and Pt than for ALD of Al2O3 and HfO2. Through quantum mechanical and stochastic simulations, the difference in the blocking ability for noble metal and metal oxide ALD by the aminosilane inhibitors could be attributed to the inherently partial surface coverage by the inhibitors at their saturation and the reactivity of the subsequent ALD precursors. As silane inhibitors can be easily integrated with vacuum-based processes to facilitate high volume manufacturing of upcoming electronic devices, the current study provides a potential approach for the utilization of AS-ALD in pattern fabrication inside 3D nanostructures.

Original languageEnglish
Pages (from-to)7603-7610
Number of pages8
JournalChemistry of Materials
Volume30
Issue number21
DOIs
Publication statusPublished - 2018 Nov 13

Fingerprint

Atomic layer deposition
Silanes
Spectroscopic ellipsometry
Surface potential
Corrosion inhibitors
Precious metals
Oxides
Nanostructures
X ray photoelectron spectroscopy
Metals
Vacuum
Fabrication

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

Cite this

Khan, R., Shong, B., Ko, B. G., Lee, J. K., Lee, H., Park, J. Y., ... Lee, H. B. R. (2018). Area-Selective Atomic Layer Deposition Using Si Precursors as Inhibitors. Chemistry of Materials, 30(21), 7603-7610. https://doi.org/10.1021/acs.chemmater.8b02774

Area-Selective Atomic Layer Deposition Using Si Precursors as Inhibitors. / Khan, Rizwan; Shong, Bonggeun; Ko, Byeong Guk; Lee, Jae Kwang; Lee, Hyunsoo; Park, Jeong Young; Oh, Il Kwon; Raya, Shimeles Shumi; Hong, Hyun Min; Chung, Kwun Bum; Luber, Erik J.; Kim, Yoon Seok; Lee, Chul-Ho; Kim, Woo Hee; Lee, Han Bo Ram.

In: Chemistry of Materials, Vol. 30, No. 21, 13.11.2018, p. 7603-7610.

Research output: Contribution to journalArticle

Khan, R, Shong, B, Ko, BG, Lee, JK, Lee, H, Park, JY, Oh, IK, Raya, SS, Hong, HM, Chung, KB, Luber, EJ, Kim, YS, Lee, C-H, Kim, WH & Lee, HBR 2018, 'Area-Selective Atomic Layer Deposition Using Si Precursors as Inhibitors', Chemistry of Materials, vol. 30, no. 21, pp. 7603-7610. https://doi.org/10.1021/acs.chemmater.8b02774
Khan, Rizwan ; Shong, Bonggeun ; Ko, Byeong Guk ; Lee, Jae Kwang ; Lee, Hyunsoo ; Park, Jeong Young ; Oh, Il Kwon ; Raya, Shimeles Shumi ; Hong, Hyun Min ; Chung, Kwun Bum ; Luber, Erik J. ; Kim, Yoon Seok ; Lee, Chul-Ho ; Kim, Woo Hee ; Lee, Han Bo Ram. / Area-Selective Atomic Layer Deposition Using Si Precursors as Inhibitors. In: Chemistry of Materials. 2018 ; Vol. 30, No. 21. pp. 7603-7610.
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