Arrangement of silicon nano-dots along step edges of a Si(111) surface: STM investigation

Jeong Sook Ha, Kang Ho Park, Young Jo Ko, Kyoung Wan Park

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Arrangement of silicon nano-dots along the step edges of a vicinal Si(111) surface was achieved. Silicon nitride islands were formed on a vicinal Si(111) surface, which was 1° off toward the [112] direction, via a thermal nitridation reaction using N 2 gas. On this nitrided surface, oxygen gas was dosed to induce a local selective etching of the bare silicon area. The resultant surface showed a one-dimensional arrangement of silicon nano-dots along the step edges of the silicon surface. The lateral size of the dot in the direction perpendicular to the step edges was restricted to the terrace width of the stepped Si(111) surface. This is explained in terms of the preferential growth of silicon nitride islands on the surface step edges, resulting in the apparent alignment of silicon nano-dots along the step edges of the vicinal Si(111) surface.

Original languageEnglish
Pages (from-to)436-439
Number of pages4
JournalJournal of the Korean Physical Society
Volume39
Issue number3
Publication statusPublished - 2001 Sep 1
Externally publishedYes

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silicon
silicon nitrides
gases
alignment
etching
oxygen

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Arrangement of silicon nano-dots along step edges of a Si(111) surface : STM investigation. / Ha, Jeong Sook; Park, Kang Ho; Ko, Young Jo; Park, Kyoung Wan.

In: Journal of the Korean Physical Society, Vol. 39, No. 3, 01.09.2001, p. 436-439.

Research output: Contribution to journalArticle

Ha, Jeong Sook ; Park, Kang Ho ; Ko, Young Jo ; Park, Kyoung Wan. / Arrangement of silicon nano-dots along step edges of a Si(111) surface : STM investigation. In: Journal of the Korean Physical Society. 2001 ; Vol. 39, No. 3. pp. 436-439.
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