Array Concepts for Solid-State and Vacuum Microelectronics Millimeter-Wave Generation

Ruey J. Hwu, C. F. Jou, Neville C. Luhmann, M. Kim, Zoya B. Popović, David B. Rutledge, W. W. Lam, W. W. Lam

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

There is an increasing demand for compact watt-level coherent sources in the millimeter- and submillimeter-wave region. The approach that we have taken to satisfy this need is to fabricate two-dimensional grids loaded with oscillators and multipliers for quasi-optical coherent spatial combining of the outputs of large numbers of low-power devices. This was first demonstrated through the successful fabrication of monolithic arrays with 2000 Schottky diodes. Watt-level power outputs were obtained in doubling to 66 GHz. In addition, a simple transmission-line model was verified with a quasi-optical reflectometer that measured the array impedance. This multiplier array work is being extended to novel tripler configurations employing blocking barrier devices. The technique has also been extended to oscillator configurations where the grid structure is loaded with negative-resistance devices. This was first demonstrated using Gunn devices. More recently, a 25-element MESFET grid oscillating at 10 GHz exhibited power combining and self-locking. Currently, this approach is being extended to a 100-element monolithic array of Gunn diodes. This same approach should be applicable to planar vacuum electron devices such as the submillimeter-wave BWO and vacuum FET.

Original languageEnglish
Pages (from-to)2645-2650
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume36
Issue number11
DOIs
Publication statusPublished - 1989 Nov

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Hwu, R. J., Jou, C. F., Luhmann, N. C., Kim, M., Popović, Z. B., Rutledge, D. B., Lam, W. W., & Lam, W. W. (1989). Array Concepts for Solid-State and Vacuum Microelectronics Millimeter-Wave Generation. IEEE Transactions on Electron Devices, 36(11), 2645-2650. https://doi.org/10.1109/16.43767