Array concepts for solid-state and vacuum microelectronics millimeter-wave generation

Ruey J. Hwu, C. F. Jou, Neville C. Luhmann, Moonil Kim, W. W. Lam, Zoya B. Popovic, David B. Rutledge

Research output: Contribution to journalArticle

8 Citations (Scopus)


The authors have proposed that the increasing demand for compact watt-level coherent sources in the millimeter- and submillimeter-wave region can be satisfied by fabricating two-dimensional grids loaded with oscillators and multipliers for quasi-optical coherent spatial combining of the outputs of large numbers of low-power devices. This was first demonstrated through the successful fabrication of monolithic arrays with 2000 Schottky diodes. Watt-level power outputs were obtained in doubling to 66 GHz. In addition, a simple transmission-line model was verified with a quasi-optical reflectometer that measured the array impedance. This multiplier array work is being extended to novel tripler configurations using blocking barrier devices. The technique has also been extended to oscillator configurations where the grid structure is loaded with negative-resistance devices. This was first demonstrated using Gunn devices. More recently, a 25-element MESFET grid oscillating at 10 GHz exhibited power combining and self-locking. Currently, this approach is being extended to a 100-element monolithic array of Gunn diodes. This same approach should be applicable to planar vacuum electron devices such as the submillimeter-wave BWO (backward wave oscillator) and vacuum FET.

Original languageEnglish
Pages (from-to)2645-2650
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number11 pt 2
Publication statusPublished - 1989 Nov 1
Externally publishedYes


ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Hwu, R. J., Jou, C. F., Luhmann, N. C., Kim, M., Lam, W. W., Popovic, Z. B., & Rutledge, D. B. (1989). Array concepts for solid-state and vacuum microelectronics millimeter-wave generation. IEEE Transactions on Electron Devices, 36(11 pt 2), 2645-2650.