Array of luminescent Er-doped Si nanodots fabricated by pulsed laser deposition

Seung Min Park; Chang Hyun Bae; Woosung Nam; Sung Chan Park; Jeong Sook Ha

doi:10.1063/1.1848196

Array of luminescent Er-doped Si nanodots fabricated by pulsed laser deposition

Seung Min Park, Chang Hyun Bae, Woosung Nam, Sung Chan Park, Jeong Sook Ha

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article

20 Citations (Scopus)

Abstract

Ordered arrays of Er-doped Si nanodots were fabricated by pulsed laser deposition using an anodic aluminum oxide (AAO) nanopore membrane. Er-doped Si (Si:Er) nanodots with an average diameter of 60-80 nm and a periodicity of 100 nm were uniformly assembled into hexagonally ordered nanopores of AAO membrane. Photoluminescence (PL) spectra taken from Si:Er nanodots showed an emission peak at 1.54 μm, which is due to intra- 4f shell transition (I 132 4 → I 152 4) of Er3+ ions. Postannealing of nanodot arrays up to 500 °C resulted in the enhancement of PL intensities without enlargement or aggregation of the nanodots.

Original language	English
Article number	023104
Pages (from-to)	023104-1-023104-3
Journal	Applied Physics Letters
Volume	86
Issue number	2
DOIs	https://doi.org/10.1063/1.1848196
Publication status	Published - 2005 Jan 10

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Park, S. M., Bae, C. H., Nam, W., Park, S. C., & Ha, J. S. (2005). Array of luminescent Er-doped Si nanodots fabricated by pulsed laser deposition. Applied Physics Letters, 86(2), 023104-1-023104-3. [023104]. https://doi.org/10.1063/1.1848196

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abstract = "Ordered arrays of Er-doped Si nanodots were fabricated by pulsed laser deposition using an anodic aluminum oxide (AAO) nanopore membrane. Er-doped Si (Si:Er) nanodots with an average diameter of 60-80 nm and a periodicity of 100 nm were uniformly assembled into hexagonally ordered nanopores of AAO membrane. Photoluminescence (PL) spectra taken from Si:Er nanodots showed an emission peak at 1.54 μm, which is due to intra- 4f shell transition (I 132 4 → I 152 4) of Er3+ ions. Postannealing of nanodot arrays up to 500 °C resulted in the enhancement of PL intensities without enlargement or aggregation of the nanodots.",

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