Abstract
Ordered arrays of Er-doped Si nanodots were fabricated by pulsed laser deposition using an anodic aluminum oxide (AAO) nanopore membrane. Er-doped Si (Si:Er) nanodots with an average diameter of 60-80 nm and a periodicity of 100 nm were uniformly assembled into hexagonally ordered nanopores of AAO membrane. Photoluminescence (PL) spectra taken from Si:Er nanodots showed an emission peak at 1.54 μm, which is due to intra- 4f shell transition (I 132 4 → I 152 4) of Er3+ ions. Postannealing of nanodot arrays up to 500 °C resulted in the enhancement of PL intensities without enlargement or aggregation of the nanodots.
Original language | English |
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Article number | 023104 |
Pages (from-to) | 023104-1-023104-3 |
Journal | Applied Physics Letters |
Volume | 86 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2005 Jan 10 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)