Array of luminescent Er-doped Si nanodots fabricated by pulsed laser deposition

Seung Min Park; Chang Hyun Bae; Woosung Nam; Sung Chan Park; Jeong Sook Ha

doi:10.1063/1.1848196

Array of luminescent Er-doped Si nanodots fabricated by pulsed laser deposition

Seung Min Park, Chang Hyun Bae, Woosung Nam, Sung Chan Park, Jeong Sook Ha

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article

20 Citations (Scopus)

Abstract

Ordered arrays of Er-doped Si nanodots were fabricated by pulsed laser deposition using an anodic aluminum oxide (AAO) nanopore membrane. Er-doped Si (Si:Er) nanodots with an average diameter of 60-80 nm and a periodicity of 100 nm were uniformly assembled into hexagonally ordered nanopores of AAO membrane. Photoluminescence (PL) spectra taken from Si:Er nanodots showed an emission peak at 1.54 μm, which is due to intra- 4f shell transition (I 132 4 → I 152 4) of Er3+ ions. Postannealing of nanodot arrays up to 500 °C resulted in the enhancement of PL intensities without enlargement or aggregation of the nanodots.

Original language	English
Article number	023104
Journal	Applied Physics Letters
Volume	86
Issue number	2
DOIs	https://doi.org/10.1063/1.1848196
Publication status	Published - 2005 Jan 10

Fingerprint

pulsed laser deposition

aluminum oxides

membranes

photoluminescence

periodic variations

augmentation

ions

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

Park, S. M., Bae, C. H., Nam, W., Park, S. C., & Ha, J. S. (2005). Array of luminescent Er-doped Si nanodots fabricated by pulsed laser deposition. Applied Physics Letters, 86(2), [023104]. https://doi.org/10.1063/1.1848196

Array of luminescent Er-doped Si nanodots fabricated by pulsed laser deposition. / Park, Seung Min; Bae, Chang Hyun; Nam, Woosung; Park, Sung Chan; Ha, Jeong Sook.

In: Applied Physics Letters, Vol. 86, No. 2, 023104, 10.01.2005.

Research output: Contribution to journal › Article

Park, SM, Bae, CH, Nam, W, Park, SC & Ha, JS 2005, 'Array of luminescent Er-doped Si nanodots fabricated by pulsed laser deposition', Applied Physics Letters, vol. 86, no. 2, 023104. https://doi.org/10.1063/1.1848196

Park SM, Bae CH, Nam W, Park SC, Ha JS. Array of luminescent Er-doped Si nanodots fabricated by pulsed laser deposition. Applied Physics Letters. 2005 Jan 10;86(2). 023104. https://doi.org/10.1063/1.1848196

Park, Seung Min ; Bae, Chang Hyun ; Nam, Woosung ; Park, Sung Chan ; Ha, Jeong Sook. / Array of luminescent Er-doped Si nanodots fabricated by pulsed laser deposition. In: Applied Physics Letters. 2005 ; Vol. 86, No. 2.

@article{a82d8df0312d493c944996f0c4637146,

title = "Array of luminescent Er-doped Si nanodots fabricated by pulsed laser deposition",

abstract = "Ordered arrays of Er-doped Si nanodots were fabricated by pulsed laser deposition using an anodic aluminum oxide (AAO) nanopore membrane. Er-doped Si (Si:Er) nanodots with an average diameter of 60-80 nm and a periodicity of 100 nm were uniformly assembled into hexagonally ordered nanopores of AAO membrane. Photoluminescence (PL) spectra taken from Si:Er nanodots showed an emission peak at 1.54 μm, which is due to intra- 4f shell transition (I 132 4 → I 152 4) of Er3+ ions. Postannealing of nanodot arrays up to 500 °C resulted in the enhancement of PL intensities without enlargement or aggregation of the nanodots.",

author = "Park, {Seung Min} and Bae, {Chang Hyun} and Woosung Nam and Park, {Sung Chan} and Ha, {Jeong Sook}",

year = "2005",

month = "1",

day = "10",

doi = "10.1063/1.1848196",

language = "English",

volume = "86",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "2",

}

TY - JOUR

T1 - Array of luminescent Er-doped Si nanodots fabricated by pulsed laser deposition

AU - Park, Seung Min

AU - Bae, Chang Hyun

AU - Nam, Woosung

AU - Park, Sung Chan

AU - Ha, Jeong Sook

PY - 2005/1/10

Y1 - 2005/1/10

N2 - Ordered arrays of Er-doped Si nanodots were fabricated by pulsed laser deposition using an anodic aluminum oxide (AAO) nanopore membrane. Er-doped Si (Si:Er) nanodots with an average diameter of 60-80 nm and a periodicity of 100 nm were uniformly assembled into hexagonally ordered nanopores of AAO membrane. Photoluminescence (PL) spectra taken from Si:Er nanodots showed an emission peak at 1.54 μm, which is due to intra- 4f shell transition (I 132 4 → I 152 4) of Er3+ ions. Postannealing of nanodot arrays up to 500 °C resulted in the enhancement of PL intensities without enlargement or aggregation of the nanodots.

AB - Ordered arrays of Er-doped Si nanodots were fabricated by pulsed laser deposition using an anodic aluminum oxide (AAO) nanopore membrane. Er-doped Si (Si:Er) nanodots with an average diameter of 60-80 nm and a periodicity of 100 nm were uniformly assembled into hexagonally ordered nanopores of AAO membrane. Photoluminescence (PL) spectra taken from Si:Er nanodots showed an emission peak at 1.54 μm, which is due to intra- 4f shell transition (I 132 4 → I 152 4) of Er3+ ions. Postannealing of nanodot arrays up to 500 °C resulted in the enhancement of PL intensities without enlargement or aggregation of the nanodots.

UR - http://www.scopus.com/inward/record.url?scp=19744383879&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=19744383879&partnerID=8YFLogxK

U2 - 10.1063/1.1848196

DO - 10.1063/1.1848196

M3 - Article

AN - SCOPUS:19744383879

VL - 86

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 2

M1 - 023104

ER -

Access to Document

10.1063/1.1848196