Array of luminescent Er-doped Si nanodots fabricated by pulsed laser deposition

Seung Min Park, Chang Hyun Bae, Woosung Nam, Sung Chan Park, Jeong Sook Ha

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Ordered arrays of Er-doped Si nanodots were fabricated by pulsed laser deposition using an anodic aluminum oxide (AAO) nanopore membrane. Er-doped Si (Si:Er) nanodots with an average diameter of 60-80 nm and a periodicity of 100 nm were uniformly assembled into hexagonally ordered nanopores of AAO membrane. Photoluminescence (PL) spectra taken from Si:Er nanodots showed an emission peak at 1.54 μm, which is due to intra- 4f shell transition (I 132 4 → I 152 4) of Er3+ ions. Postannealing of nanodot arrays up to 500 °C resulted in the enhancement of PL intensities without enlargement or aggregation of the nanodots.

Original languageEnglish
Article number023104
JournalApplied Physics Letters
Volume86
Issue number2
DOIs
Publication statusPublished - 2005 Jan 10

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pulsed laser deposition
aluminum oxides
membranes
photoluminescence
periodic variations
augmentation
ions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Array of luminescent Er-doped Si nanodots fabricated by pulsed laser deposition. / Park, Seung Min; Bae, Chang Hyun; Nam, Woosung; Park, Sung Chan; Ha, Jeong Sook.

In: Applied Physics Letters, Vol. 86, No. 2, 023104, 10.01.2005.

Research output: Contribution to journalArticle

Park, Seung Min ; Bae, Chang Hyun ; Nam, Woosung ; Park, Sung Chan ; Ha, Jeong Sook. / Array of luminescent Er-doped Si nanodots fabricated by pulsed laser deposition. In: Applied Physics Letters. 2005 ; Vol. 86, No. 2.
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