Artificial array of InAs quantum dots on a strain-engineered superlattice

K. M. Kim, Y. J. Park, S. H. Son, S. H. Lee, J. I. Lee, Jung ho Park, S. K. Park

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Aligned quantum dots (QDs) were successfully formed along the 〈110〉 direction on a strain-engineered layer using InAs/GaAs superlattice (SL). The aligned QDs have good quantum confinements without degradation of optical properties. It is found from transmission electron spectroscopy and Raman scattering measurements that the strained InAs/GaAs SL acts as a strained layer having tensile stress for the site control of QDs without the generation of defects acting as nonradiative recombination centers. The artificial array of self-assembled QDs can provide a clue for the easy and high throughput fabrication method for the application of single-electron devices.

Original languageEnglish
Pages (from-to)148-152
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume24
Issue number1-2 SPEC. ISS.
DOIs
Publication statusPublished - 2004 Aug 1

Fingerprint

Semiconductor quantum dots
quantum dots
Electron devices
Quantum confinement
Electron spectroscopy
tensile stress
Tensile stress
electron spectroscopy
Raman scattering
Optical properties
Throughput
Raman spectra
degradation
optical properties
Fabrication
Degradation
Defects
fabrication
indium arsenide
defects

Keywords

  • Alignment
  • Quantum-dot array
  • Single-electron devices
  • Strain-engineering

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Artificial array of InAs quantum dots on a strain-engineered superlattice. / Kim, K. M.; Park, Y. J.; Son, S. H.; Lee, S. H.; Lee, J. I.; Park, Jung ho; Park, S. K.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 24, No. 1-2 SPEC. ISS., 01.08.2004, p. 148-152.

Research output: Contribution to journalArticle

Kim, K. M. ; Park, Y. J. ; Son, S. H. ; Lee, S. H. ; Lee, J. I. ; Park, Jung ho ; Park, S. K. / Artificial array of InAs quantum dots on a strain-engineered superlattice. In: Physica E: Low-Dimensional Systems and Nanostructures. 2004 ; Vol. 24, No. 1-2 SPEC. ISS. pp. 148-152.
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