Artificial array of InAs quantum dots on a strain-engineered superlattice

K. M. Kim, Y. J. Park, S. H. Son, S. H. Lee, J. I. Lee, J. H. Park, S. K. Park

Research output: Contribution to journalConference article

7 Citations (Scopus)

Abstract

Aligned quantum dots (QDs) were successfully formed along the 〈110〉 direction on a strain-engineered layer using InAs/GaAs superlattice (SL). The aligned QDs have good quantum confinements without degradation of optical properties. It is found from transmission electron spectroscopy and Raman scattering measurements that the strained InAs/GaAs SL acts as a strained layer having tensile stress for the site control of QDs without the generation of defects acting as nonradiative recombination centers. The artificial array of self-assembled QDs can provide a clue for the easy and high throughput fabrication method for the application of single-electron devices.

Original languageEnglish
Pages (from-to)148-152
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume24
Issue number1-2 SPEC. ISS.
DOIs
Publication statusPublished - 2004 Aug
EventProceedings of the Intenational Symposium on Functional - Atsugi/Kanagawa, Japan
Duration: 2003 Nov 122003 Nov 14

Keywords

  • Alignment
  • Quantum-dot array
  • Single-electron devices
  • Strain-engineering

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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