Artificial array of InAs quantum dots on a strain-engineered superlattice

K. M. Kim; Y. J. Park; S. H. Son; S. H. Lee; J. I. Lee; J. H. Park; S. K. Park

doi:10.1016/j.physe.2004.04.005

Artificial array of InAs quantum dots on a strain-engineered superlattice

K. M. Kim, Y. J. Park, S. H. Son, S. H. Lee, J. I. Lee, J. H. Park, S. K. Park

School of Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

7 Citations (Scopus)

Abstract

Aligned quantum dots (QDs) were successfully formed along the 〈110〉 direction on a strain-engineered layer using InAs/GaAs superlattice (SL). The aligned QDs have good quantum confinements without degradation of optical properties. It is found from transmission electron spectroscopy and Raman scattering measurements that the strained InAs/GaAs SL acts as a strained layer having tensile stress for the site control of QDs without the generation of defects acting as nonradiative recombination centers. The artificial array of self-assembled QDs can provide a clue for the easy and high throughput fabrication method for the application of single-electron devices.

Original language	English
Pages (from-to)	148-152
Number of pages	5
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	24
Issue number	1-2 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.physe.2004.04.005
Publication status	Published - 2004 Aug
Event	Proceedings of the Intenational Symposium on Functional - Atsugi/Kanagawa, Japan Duration: 2003 Nov 12 → 2003 Nov 14

Keywords

Alignment
Quantum-dot array
Single-electron devices
Strain-engineering

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/j.physe.2004.04.005

Cite this

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title = "Artificial array of InAs quantum dots on a strain-engineered superlattice",

abstract = "Aligned quantum dots (QDs) were successfully formed along the 〈110〉 direction on a strain-engineered layer using InAs/GaAs superlattice (SL). The aligned QDs have good quantum confinements without degradation of optical properties. It is found from transmission electron spectroscopy and Raman scattering measurements that the strained InAs/GaAs SL acts as a strained layer having tensile stress for the site control of QDs without the generation of defects acting as nonradiative recombination centers. The artificial array of self-assembled QDs can provide a clue for the easy and high throughput fabrication method for the application of single-electron devices.",

keywords = "Alignment, Quantum-dot array, Single-electron devices, Strain-engineering",

author = "Kim, {K. M.} and Park, {Y. J.} and Son, {S. H.} and Lee, {S. H.} and Lee, {J. I.} and Park, {J. H.} and Park, {S. K.}",

note = "Funding Information: The Authors would like to thank Prof. J.Y. Lee and Dr. H.S. Lee of KAIST for the TEM measurement. This work was supported by the Nanostructure Technology Project, and by the Nano R&D program of MOST.; Proceedings of the Intenational Symposium on Functional ; Conference date: 12-11-2003 Through 14-11-2003",

year = "2004",

month = aug,

doi = "10.1016/j.physe.2004.04.005",

language = "English",

volume = "24",

pages = "148--152",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier",

number = "1-2 SPEC. ISS.",

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TY - JOUR

T1 - Artificial array of InAs quantum dots on a strain-engineered superlattice

AU - Kim, K. M.

AU - Park, Y. J.

AU - Son, S. H.

AU - Lee, S. H.

AU - Lee, J. I.

AU - Park, J. H.

AU - Park, S. K.

N1 - Funding Information: The Authors would like to thank Prof. J.Y. Lee and Dr. H.S. Lee of KAIST for the TEM measurement. This work was supported by the Nanostructure Technology Project, and by the Nano R&D program of MOST.

PY - 2004/8

Y1 - 2004/8

N2 - Aligned quantum dots (QDs) were successfully formed along the 〈110〉 direction on a strain-engineered layer using InAs/GaAs superlattice (SL). The aligned QDs have good quantum confinements without degradation of optical properties. It is found from transmission electron spectroscopy and Raman scattering measurements that the strained InAs/GaAs SL acts as a strained layer having tensile stress for the site control of QDs without the generation of defects acting as nonradiative recombination centers. The artificial array of self-assembled QDs can provide a clue for the easy and high throughput fabrication method for the application of single-electron devices.

AB - Aligned quantum dots (QDs) were successfully formed along the 〈110〉 direction on a strain-engineered layer using InAs/GaAs superlattice (SL). The aligned QDs have good quantum confinements without degradation of optical properties. It is found from transmission electron spectroscopy and Raman scattering measurements that the strained InAs/GaAs SL acts as a strained layer having tensile stress for the site control of QDs without the generation of defects acting as nonradiative recombination centers. The artificial array of self-assembled QDs can provide a clue for the easy and high throughput fabrication method for the application of single-electron devices.

KW - Alignment

KW - Quantum-dot array

KW - Single-electron devices

KW - Strain-engineering

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U2 - 10.1016/j.physe.2004.04.005

DO - 10.1016/j.physe.2004.04.005

M3 - Conference article

AN - SCOPUS:3142671353

SN - 1386-9477

VL - 24

SP - 148

EP - 152

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-2 SPEC. ISS.

T2 - Proceedings of the Intenational Symposium on Functional

Y2 - 12 November 2003 through 14 November 2003

ER -

Artificial array of InAs quantum dots on a strain-engineered superlattice

Abstract

Keywords

ASJC Scopus subject areas

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