TY - JOUR
T1 - Artificial synaptic and self-rectifying properties of crystalline (Na1-xKx)NbO3 thin films grown on Sr2Nb3O10 nanosheet seed layers
AU - Kim, In Su
AU - Woo, Jong Un
AU - Hwang, Hyun Gyu
AU - Kim, Bumjoo
AU - Nahm, Sahn
N1 - Funding Information:
This research was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. 2020R1A2B5B01002063 ). We thank the KU-KIST Graduate School Program of the Korea University .
Publisher Copyright:
© 2022
PY - 2022/10/1
Y1 - 2022/10/1
N2 - Crystalline (Na1-xKx)NbO3 (NKN) thin films were deposited on Sr2Nb3O10/TiN/Si (S-TS) substrates at 370 °C. Sr2Nb3O10 (SNO) nanosheets served as a template for the formation of crystalline NKN films at low temperatures. When the NKN film was deposited on one SNO monolayer, the NKN memristor exhibited normal bipolar switching characteristics, which could be attributed to the formation and destruction of oxygen vacancy filaments. Moreover, the NKN memristor with one SNO monolayer exhibited artificial synaptic properties. However, the NKN memristor deposited on two SNO monolayers exhibited self-rectifying bipolar switching properties, with the two SNO monolayers acting as tunneling barriers in the memristor. The conduction mechanism of the NKN memristor with two SNO monolayers in the high-resistance state is attributed to Schottky emission, direct tunneling, and Fowler–Nordheim (FN) tunneling. The current conduction in this memristor in the low-resistance state was governed by direct tunneling and FN tunneling. Additionally, the NKN memristor with two SNO monolayers exhibited large ON/OFF and rectification ratios and artificial synaptic properties. Therefore, an NKN memristor with two SNO monolayers can be used for fabricating artificial synaptic devices with a cross-point array structure.
AB - Crystalline (Na1-xKx)NbO3 (NKN) thin films were deposited on Sr2Nb3O10/TiN/Si (S-TS) substrates at 370 °C. Sr2Nb3O10 (SNO) nanosheets served as a template for the formation of crystalline NKN films at low temperatures. When the NKN film was deposited on one SNO monolayer, the NKN memristor exhibited normal bipolar switching characteristics, which could be attributed to the formation and destruction of oxygen vacancy filaments. Moreover, the NKN memristor with one SNO monolayer exhibited artificial synaptic properties. However, the NKN memristor deposited on two SNO monolayers exhibited self-rectifying bipolar switching properties, with the two SNO monolayers acting as tunneling barriers in the memristor. The conduction mechanism of the NKN memristor with two SNO monolayers in the high-resistance state is attributed to Schottky emission, direct tunneling, and Fowler–Nordheim (FN) tunneling. The current conduction in this memristor in the low-resistance state was governed by direct tunneling and FN tunneling. Additionally, the NKN memristor with two SNO monolayers exhibited large ON/OFF and rectification ratios and artificial synaptic properties. Therefore, an NKN memristor with two SNO monolayers can be used for fabricating artificial synaptic devices with a cross-point array structure.
KW - Artificial synaptic properties
KW - Bipolar switching properties
KW - Crystalline NKN thin film
KW - Self-rectifying bipolar switching properties
KW - SrNbO nanosheet seed layer
UR - http://www.scopus.com/inward/record.url?scp=85127362655&partnerID=8YFLogxK
U2 - 10.1016/j.jmst.2022.02.021
DO - 10.1016/j.jmst.2022.02.021
M3 - Article
AN - SCOPUS:85127362655
SN - 1005-0302
VL - 123
SP - 136
EP - 143
JO - Journal of Materials Science and Technology
JF - Journal of Materials Science and Technology
ER -