ASE-injected wideband gain lasers covering C-band channels with temperature range from -30 to 80°C in A 155 Mb/s WDM-PON

J. K. Lee; E. H. Lee; D. J. Shin; Y. C. Bang; J. Y. Kim; J. H. Lee; H. S. Kim; Y. K. Oh; T. I. Kim

ASE-injected wideband gain lasers covering C-band channels with temperature range from -30 to 80°C in A 155 Mb/s WDM-PON

J. K. Lee, E. H. Lee, D. J. Shin, Y. C. Bang, J. Y. Kim, J. H. Lee, H. S. Kim, Y. K. Oh, T. I. Kim

Research output: Contribution to journal › Conference article › peer-review

Abstract

We report a spectrum-sliced amplified spontaneous emission (ASE)-injected wideband gain laser covering entire C-band wavelength channels with temperature range from -30 to 80°C in 155 Mb/s upstream transmissions over 25 km of single mode fiber in a wavelength division multiplexed-passive optical networks(WDM-PON).

Original language	English
Pages (from-to)	746-749
Number of pages	4
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication status	Published - 2004
Externally published	Yes
Event	2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM - Kagoshima, Japan Duration: 2004 May 31 → 2004 Jun 4

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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ASE-injected wideband gain lasers covering C-band channels with temperature range from -30 to 80°C in A 155 Mb/s WDM-PON. / Lee, J. K.; Lee, E. H.; Shin, D. J.; Bang, Y. C.; Kim, J. Y.; Lee, J. H.; Kim, H. S.; Oh, Y. K.; Kim, T. I.

In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2004, p. 746-749.

Research output: Contribution to journal › Conference article › peer-review

@article{37513ad83cc04fe2a23ee2a1abd56637,

title = "ASE-injected wideband gain lasers covering C-band channels with temperature range from -30 to 80°C in A 155 Mb/s WDM-PON",

abstract = "We report a spectrum-sliced amplified spontaneous emission (ASE)-injected wideband gain laser covering entire C-band wavelength channels with temperature range from -30 to 80°C in 155 Mb/s upstream transmissions over 25 km of single mode fiber in a wavelength division multiplexed-passive optical networks(WDM-PON).",

author = "Lee, {J. K.} and Lee, {E. H.} and Shin, {D. J.} and Bang, {Y. C.} and Kim, {J. Y.} and Lee, {J. H.} and Kim, {H. S.} and Oh, {Y. K.} and Kim, {T. I.}",

year = "2004",

language = "English",

pages = "746--749",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM ; Conference date: 31-05-2004 Through 04-06-2004",

}

TY - JOUR

T1 - ASE-injected wideband gain lasers covering C-band channels with temperature range from -30 to 80°C in A 155 Mb/s WDM-PON

AU - Lee, J. K.

AU - Lee, E. H.

AU - Shin, D. J.

AU - Bang, Y. C.

AU - Kim, J. Y.

AU - Lee, J. H.

AU - Kim, H. S.

AU - Oh, Y. K.

AU - Kim, T. I.

PY - 2004

Y1 - 2004

N2 - We report a spectrum-sliced amplified spontaneous emission (ASE)-injected wideband gain laser covering entire C-band wavelength channels with temperature range from -30 to 80°C in 155 Mb/s upstream transmissions over 25 km of single mode fiber in a wavelength division multiplexed-passive optical networks(WDM-PON).

AB - We report a spectrum-sliced amplified spontaneous emission (ASE)-injected wideband gain laser covering entire C-band wavelength channels with temperature range from -30 to 80°C in 155 Mb/s upstream transmissions over 25 km of single mode fiber in a wavelength division multiplexed-passive optical networks(WDM-PON).

UR - http://www.scopus.com/inward/record.url?scp=13244274424&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=13244274424&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:13244274424

SP - 746

EP - 749

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

SN - 1092-8669

T2 - 2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM

Y2 - 31 May 2004 through 4 June 2004

ER -