ASE-injected wideband gain lasers covering C-band channels with temperature range from -30 to 80°C in A 155 Mb/s WDM-PON

J. K. Lee, E. H. Lee, D. J. Shin, Y. C. Bang, J. Y. Kim, Jae Hoon Lee, H. S. Kim, Y. K. Oh, T. I. Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

We report a spectrum-sliced amplified spontaneous emission (ASE)-injected wideband gain laser covering entire C-band wavelength channels with temperature range from -30 to 80°C in 155 Mb/s upstream transmissions over 25 km of single mode fiber in a wavelength division multiplexed-passive optical networks(WDM-PON).

Original languageEnglish
Title of host publicationConference Proceedings - International Conference on Indium Phosphide and Related Materials
Pages746-749
Number of pages4
Publication statusPublished - 2004
Externally publishedYes
Event2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM - Kagoshima, Japan
Duration: 2004 May 312004 Jun 4

Other

Other2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM
CountryJapan
CityKagoshima
Period04/5/3104/6/4

Fingerprint

Passive optical networks
Spontaneous emission
C band
spontaneous emission
division
coverings
broadband
Wavelength
Lasers
Single mode fibers
wavelengths
upstream
lasers
Temperature
fibers
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Materials Science(all)

Cite this

Lee, J. K., Lee, E. H., Shin, D. J., Bang, Y. C., Kim, J. Y., Lee, J. H., ... Kim, T. I. (2004). ASE-injected wideband gain lasers covering C-band channels with temperature range from -30 to 80°C in A 155 Mb/s WDM-PON. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp. 746-749)

ASE-injected wideband gain lasers covering C-band channels with temperature range from -30 to 80°C in A 155 Mb/s WDM-PON. / Lee, J. K.; Lee, E. H.; Shin, D. J.; Bang, Y. C.; Kim, J. Y.; Lee, Jae Hoon; Kim, H. S.; Oh, Y. K.; Kim, T. I.

Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2004. p. 746-749.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lee, JK, Lee, EH, Shin, DJ, Bang, YC, Kim, JY, Lee, JH, Kim, HS, Oh, YK & Kim, TI 2004, ASE-injected wideband gain lasers covering C-band channels with temperature range from -30 to 80°C in A 155 Mb/s WDM-PON. in Conference Proceedings - International Conference on Indium Phosphide and Related Materials. pp. 746-749, 2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM, Kagoshima, Japan, 04/5/31.
Lee JK, Lee EH, Shin DJ, Bang YC, Kim JY, Lee JH et al. ASE-injected wideband gain lasers covering C-band channels with temperature range from -30 to 80°C in A 155 Mb/s WDM-PON. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2004. p. 746-749
Lee, J. K. ; Lee, E. H. ; Shin, D. J. ; Bang, Y. C. ; Kim, J. Y. ; Lee, Jae Hoon ; Kim, H. S. ; Oh, Y. K. ; Kim, T. I. / ASE-injected wideband gain lasers covering C-band channels with temperature range from -30 to 80°C in A 155 Mb/s WDM-PON. Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2004. pp. 746-749
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