Assessment of the (010) β-Ga2O3surface and substrate specification

Michael A. Mastro, Charles R. Eddy, Marko J. Tadjer, Jennifer K. Hite, Jihyun Kim, Stephen J. Pearton

Research output: Contribution to journalArticlepeer-review

Abstract

Recent breakthroughs in bulk crystal growth of the thermodynamically stable beta phase of gallium oxide (β-Ga2O3) have led to the commercialization of large-area β-Ga2O3 substrates with subsequent epitaxy on (010) substrates producing high-quality films. Still, metalorganic chemical vapor deposition, molecular beam epitaxy, and processing of the (010) β-Ga2O3 surface are known to form subnanometer-scale facets along the [001] direction as well as larger ridges with features perpendicular to the [001] direction. A density function theory calculation of the (010) surface shows an ordering of the surface as a subnanometer-scale feature along the [001] direction. Additionally, the general crystal structure of β-Ga2O3 is presented, and recommendations are presented for standardizing (010) substrates to account for and control the larger-scale ridge formation.

Original languageEnglish
Article number013408
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume39
Issue number1
DOIs
Publication statusPublished - 2021 Jan 1

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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