Recent breakthroughs in bulk crystal growth of the thermodynamically stable beta phase of gallium oxide (β-Ga2O3) have led to the commercialization of large-area β-Ga2O3 substrates with subsequent epitaxy on (010) substrates producing high-quality films. Still, metalorganic chemical vapor deposition, molecular beam epitaxy, and processing of the (010) β-Ga2O3 surface are known to form subnanometer-scale facets along the  direction as well as larger ridges with features perpendicular to the  direction. A density function theory calculation of the (010) surface shows an ordering of the surface as a subnanometer-scale feature along the  direction. Additionally, the general crystal structure of β-Ga2O3 is presented, and recommendations are presented for standardizing (010) substrates to account for and control the larger-scale ridge formation.
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Publication status||Published - 2021 Jan 1|
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films