Asymmetric magnetoresistance in a double magnetic barrier device

Sungjung Joo, Jinki Hong, Kungwon Rhie, K. Y. Jung, Kihyun Kim, S. U. Kim, B. C. Lee, W. H. Park, Kyung Ho Shin

Research output: Contribution to journalArticle

13 Citations (Scopus)


We have obtained a large and quite asymmetric magnetoresistance in a InAs two-dimensional electron gas system in which the shape of the magnetic field profile has the form of two barriers with opposite signs. These magnetic barriers are controlled by a magnetization of micromagnets on the surface of the device. From a numerical analysis based on a diffusive and a ballistic transport model, the mechanism of the asymmetric magnetoresistance effect can be understood in terms of the junction of positive and negative magnetic-field regions. This device can be a good candidate for a magnetoresistance-based device for high-density data storage and retrieval and for a spintronic device using a spin up/down junction.

Original languageEnglish
Pages (from-to)642-647
Number of pages6
JournalJournal of the Korean Physical Society
Issue number4
Publication statusPublished - 2006 Apr 1


  • 2DEG
  • Ballistic motion
  • Hall angle
  • InAs
  • Magnetoresistance

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Joo, S., Hong, J., Rhie, K., Jung, K. Y., Kim, K., Kim, S. U., Lee, B. C., Park, W. H., & Shin, K. H. (2006). Asymmetric magnetoresistance in a double magnetic barrier device. Journal of the Korean Physical Society, 48(4), 642-647.