Asymmetric magnetoresistance in a double magnetic barrier device

Sungjung Joo, Jinki Hong, Kungwon Rhie, K. Y. Jung, Kihyun Kim, S. U. Kim, B. C. Lee, W. H. Park, Kyung Ho Shin

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We have obtained a large and quite asymmetric magnetoresistance in a InAs two-dimensional electron gas system in which the shape of the magnetic field profile has the form of two barriers with opposite signs. These magnetic barriers are controlled by a magnetization of micromagnets on the surface of the device. From a numerical analysis based on a diffusive and a ballistic transport model, the mechanism of the asymmetric magnetoresistance effect can be understood in terms of the junction of positive and negative magnetic-field regions. This device can be a good candidate for a magnetoresistance-based device for high-density data storage and retrieval and for a spintronic device using a spin up/down junction.

Original languageEnglish
Pages (from-to)642-647
Number of pages6
JournalJournal of the Korean Physical Society
Volume48
Issue number4
Publication statusPublished - 2006 Apr 1

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data retrieval
data storage
magnetic fields
ballistics
numerical analysis
electron gas
magnetization
profiles

Keywords

  • 2DEG
  • Ballistic motion
  • Hall angle
  • InAs
  • Magnetoresistance

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Joo, S., Hong, J., Rhie, K., Jung, K. Y., Kim, K., Kim, S. U., ... Shin, K. H. (2006). Asymmetric magnetoresistance in a double magnetic barrier device. Journal of the Korean Physical Society, 48(4), 642-647.

Asymmetric magnetoresistance in a double magnetic barrier device. / Joo, Sungjung; Hong, Jinki; Rhie, Kungwon; Jung, K. Y.; Kim, Kihyun; Kim, S. U.; Lee, B. C.; Park, W. H.; Shin, Kyung Ho.

In: Journal of the Korean Physical Society, Vol. 48, No. 4, 01.04.2006, p. 642-647.

Research output: Contribution to journalArticle

Joo, S, Hong, J, Rhie, K, Jung, KY, Kim, K, Kim, SU, Lee, BC, Park, WH & Shin, KH 2006, 'Asymmetric magnetoresistance in a double magnetic barrier device', Journal of the Korean Physical Society, vol. 48, no. 4, pp. 642-647.
Joo S, Hong J, Rhie K, Jung KY, Kim K, Kim SU et al. Asymmetric magnetoresistance in a double magnetic barrier device. Journal of the Korean Physical Society. 2006 Apr 1;48(4):642-647.
Joo, Sungjung ; Hong, Jinki ; Rhie, Kungwon ; Jung, K. Y. ; Kim, Kihyun ; Kim, S. U. ; Lee, B. C. ; Park, W. H. ; Shin, Kyung Ho. / Asymmetric magnetoresistance in a double magnetic barrier device. In: Journal of the Korean Physical Society. 2006 ; Vol. 48, No. 4. pp. 642-647.
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