Abstract
Planar Hall effect measurements were carried out on two GaMnAs ferromagnetic films with different Mn concentrations (6.2 and 8.3 Mn). The switching fields of magnetization taken from field scans of the planar Hall effect showed significantly different angular dependences in the two samples. While the angular dependence of the switching field for the sample with 8.3 Mn had a symmetric rectangular shape in the polar plot, that of the other sample with 6.2 Mn exhibited a clearly asymmetric behavior, with large steps at the 110 crystallographic directions. This switching field behavior was analyzed by considering pinning fields for crossing the 110 directions. The fitting of step features appearing at the 110 directions revealed the presence of a new uniaxial anisotropy field Hu2 along the 100 direction, in addition to the commonly observed cubic Hc anisotropy field (along the 100 directions) and uniaxial anisotropy Hu1 fields (along either the 110 or the [1 1 0] direction) in the GaMnAs film.
| Original language | English |
|---|---|
| Article number | 07C308 |
| Journal | Journal of Applied Physics |
| Volume | 109 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2011 Apr 1 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
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Asymmetry in the angular dependence of the switching field of GaMnAs film. / Lee, Sang Hoon; Shin, Jinsik; Kim, Shinhee; Lee, Sangyeop; Yoo, Taehee; Lee, Hakjoon; Khym, S.; Liu, X.; Furdyna, J. K.
In: Journal of Applied Physics, Vol. 109, No. 7, 07C308, 01.04.2011.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Asymmetry in the angular dependence of the switching field of GaMnAs film
AU - Lee, Sang Hoon
AU - Shin, Jinsik
AU - Kim, Shinhee
AU - Lee, Sangyeop
AU - Yoo, Taehee
AU - Lee, Hakjoon
AU - Khym, S.
AU - Liu, X.
AU - Furdyna, J. K.
PY - 2011/4/1
Y1 - 2011/4/1
N2 - Planar Hall effect measurements were carried out on two GaMnAs ferromagnetic films with different Mn concentrations (6.2 and 8.3 Mn). The switching fields of magnetization taken from field scans of the planar Hall effect showed significantly different angular dependences in the two samples. While the angular dependence of the switching field for the sample with 8.3 Mn had a symmetric rectangular shape in the polar plot, that of the other sample with 6.2 Mn exhibited a clearly asymmetric behavior, with large steps at the 110 crystallographic directions. This switching field behavior was analyzed by considering pinning fields for crossing the 110 directions. The fitting of step features appearing at the 110 directions revealed the presence of a new uniaxial anisotropy field Hu2 along the 100 direction, in addition to the commonly observed cubic Hc anisotropy field (along the 100 directions) and uniaxial anisotropy Hu1 fields (along either the 110 or the [1 1 0] direction) in the GaMnAs film.
AB - Planar Hall effect measurements were carried out on two GaMnAs ferromagnetic films with different Mn concentrations (6.2 and 8.3 Mn). The switching fields of magnetization taken from field scans of the planar Hall effect showed significantly different angular dependences in the two samples. While the angular dependence of the switching field for the sample with 8.3 Mn had a symmetric rectangular shape in the polar plot, that of the other sample with 6.2 Mn exhibited a clearly asymmetric behavior, with large steps at the 110 crystallographic directions. This switching field behavior was analyzed by considering pinning fields for crossing the 110 directions. The fitting of step features appearing at the 110 directions revealed the presence of a new uniaxial anisotropy field Hu2 along the 100 direction, in addition to the commonly observed cubic Hc anisotropy field (along the 100 directions) and uniaxial anisotropy Hu1 fields (along either the 110 or the [1 1 0] direction) in the GaMnAs film.
UR - http://www.scopus.com/inward/record.url?scp=79955404209&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79955404209&partnerID=8YFLogxK
U2 - 10.1063/1.3537946
DO - 10.1063/1.3537946
M3 - Article
AN - SCOPUS:79955404209
VL - 109
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 7
M1 - 07C308
ER -