Asymmetry in the angular dependence of the switching field of GaMnAs film

Sanghoon Lee, Jinsik Shin, Shinhee Kim, Sangyeop Lee, Taehee Yoo, Hakjoon Lee, S. Khym, X. Liu, J. K. Furdyna

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13 Citations (Scopus)

Abstract

Planar Hall effect measurements were carried out on two GaMnAs ferromagnetic films with different Mn concentrations (6.2 and 8.3 Mn). The switching fields of magnetization taken from field scans of the planar Hall effect showed significantly different angular dependences in the two samples. While the angular dependence of the switching field for the sample with 8.3 Mn had a symmetric rectangular shape in the polar plot, that of the other sample with 6.2 Mn exhibited a clearly asymmetric behavior, with large steps at the 110 crystallographic directions. This switching field behavior was analyzed by considering pinning fields for crossing the 110 directions. The fitting of step features appearing at the 110 directions revealed the presence of a new uniaxial anisotropy field Hu2 along the 100 direction, in addition to the commonly observed cubic Hc anisotropy field (along the 100 directions) and uniaxial anisotropy Hu1 fields (along either the 110 or the [1 1 0] direction) in the GaMnAs film.

Original languageEnglish
Article number07C308
JournalJournal of Applied Physics
Volume109
Issue number7
DOIs
Publication statusPublished - 2011 Apr 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Lee, S., Shin, J., Kim, S., Lee, S., Yoo, T., Lee, H., Khym, S., Liu, X., & Furdyna, J. K. (2011). Asymmetry in the angular dependence of the switching field of GaMnAs film. Journal of Applied Physics, 109(7), [07C308]. https://doi.org/10.1063/1.3537946