Asymmetry in the angular dependence of the switching field of GaMnAs film

Sanghoon Lee; Jinsik Shin; Shinhee Kim; Sangyeop Lee; Taehee Yoo; Hakjoon Lee; S. Khym; X. Liu; J. K. Furdyna

doi:10.1063/1.3537946

Asymmetry in the angular dependence of the switching field of GaMnAs film

Sanghoon Lee, Jinsik Shin, Shinhee Kim, Sangyeop Lee, Taehee Yoo, Hakjoon Lee, S. Khym, X. Liu, J. K. Furdyna

Department of Physics

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Planar Hall effect measurements were carried out on two GaMnAs ferromagnetic films with different Mn concentrations (6.2 and 8.3 Mn). The switching fields of magnetization taken from field scans of the planar Hall effect showed significantly different angular dependences in the two samples. While the angular dependence of the switching field for the sample with 8.3 Mn had a symmetric rectangular shape in the polar plot, that of the other sample with 6.2 Mn exhibited a clearly asymmetric behavior, with large steps at the 110 crystallographic directions. This switching field behavior was analyzed by considering pinning fields for crossing the 110 directions. The fitting of step features appearing at the 110 directions revealed the presence of a new uniaxial anisotropy field H_u2 along the 100 direction, in addition to the commonly observed cubic H_c anisotropy field (along the 100 directions) and uniaxial anisotropy H_u1 fields (along either the 110 or the [1 1 0] direction) in the GaMnAs film.

Original language	English
Article number	07C308
Journal	Journal of Applied Physics
Volume	109
Issue number	7
DOIs	https://doi.org/10.1063/1.3537946
Publication status	Published - 2011 Apr 1

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Asymmetry in the angular dependence of the switching field of GaMnAs film",

abstract = "Planar Hall effect measurements were carried out on two GaMnAs ferromagnetic films with different Mn concentrations (6.2 and 8.3 Mn). The switching fields of magnetization taken from field scans of the planar Hall effect showed significantly different angular dependences in the two samples. While the angular dependence of the switching field for the sample with 8.3 Mn had a symmetric rectangular shape in the polar plot, that of the other sample with 6.2 Mn exhibited a clearly asymmetric behavior, with large steps at the 110 crystallographic directions. This switching field behavior was analyzed by considering pinning fields for crossing the 110 directions. The fitting of step features appearing at the 110 directions revealed the presence of a new uniaxial anisotropy field Hu2 along the 100 direction, in addition to the commonly observed cubic Hc anisotropy field (along the 100 directions) and uniaxial anisotropy Hu1 fields (along either the 110 or the [1 1 0] direction) in the GaMnAs film.",

author = "Sanghoon Lee and Jinsik Shin and Shinhee Kim and Sangyeop Lee and Taehee Yoo and Hakjoon Lee and S. Khym and X. Liu and Furdyna, {J. K.}",

note = "Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) grant funded by the Ministry of Education, Science and Technology (No. 2010-0015952); by Mid-career Researcher Program through NRF grant funded by the Ministry of Education, Science and Technology (No. 2009-00852028), and (No. 2010-0000123), and by the National Science Foundation Grant DMR10-05851.",

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doi = "10.1063/1.3537946",

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T1 - Asymmetry in the angular dependence of the switching field of GaMnAs film

AU - Lee, Sanghoon

AU - Shin, Jinsik

AU - Kim, Shinhee

AU - Lee, Sangyeop

AU - Yoo, Taehee

AU - Lee, Hakjoon

AU - Khym, S.

AU - Liu, X.

AU - Furdyna, J. K.

N1 - Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) grant funded by the Ministry of Education, Science and Technology (No. 2010-0015952); by Mid-career Researcher Program through NRF grant funded by the Ministry of Education, Science and Technology (No. 2009-00852028), and (No. 2010-0000123), and by the National Science Foundation Grant DMR10-05851.

PY - 2011/4/1

Y1 - 2011/4/1

N2 - Planar Hall effect measurements were carried out on two GaMnAs ferromagnetic films with different Mn concentrations (6.2 and 8.3 Mn). The switching fields of magnetization taken from field scans of the planar Hall effect showed significantly different angular dependences in the two samples. While the angular dependence of the switching field for the sample with 8.3 Mn had a symmetric rectangular shape in the polar plot, that of the other sample with 6.2 Mn exhibited a clearly asymmetric behavior, with large steps at the 110 crystallographic directions. This switching field behavior was analyzed by considering pinning fields for crossing the 110 directions. The fitting of step features appearing at the 110 directions revealed the presence of a new uniaxial anisotropy field Hu2 along the 100 direction, in addition to the commonly observed cubic Hc anisotropy field (along the 100 directions) and uniaxial anisotropy Hu1 fields (along either the 110 or the [1 1 0] direction) in the GaMnAs film.

AB - Planar Hall effect measurements were carried out on two GaMnAs ferromagnetic films with different Mn concentrations (6.2 and 8.3 Mn). The switching fields of magnetization taken from field scans of the planar Hall effect showed significantly different angular dependences in the two samples. While the angular dependence of the switching field for the sample with 8.3 Mn had a symmetric rectangular shape in the polar plot, that of the other sample with 6.2 Mn exhibited a clearly asymmetric behavior, with large steps at the 110 crystallographic directions. This switching field behavior was analyzed by considering pinning fields for crossing the 110 directions. The fitting of step features appearing at the 110 directions revealed the presence of a new uniaxial anisotropy field Hu2 along the 100 direction, in addition to the commonly observed cubic Hc anisotropy field (along the 100 directions) and uniaxial anisotropy Hu1 fields (along either the 110 or the [1 1 0] direction) in the GaMnAs film.

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Asymmetry in the angular dependence of the switching field of GaMnAs film

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