Abstract
We have investigated the Hall effects of the ferromagnetic Fe films grown on standard (001) and on vicinal (i.e., slightly tilted toward the [1 1- 0] direction) GaAs substrates at room temperature. While the symmetric hysteresis in the planar Hall resistance (PHR) is obtained from Fe film grown nominal (001) substrate, a significant asymmetry appeared in the Fe films grown on vicinal GaAs substrates. The asymmetry in the hysteresis of the PHR observed in the Fe film grown on vicinal surface originates from the switching of magnetization M between two easy axes while it is confined to the (001) crystal plane rather than to the film plane, thus involves both the planar Hall effect (PHE) and the anomalous Hall effect (AHE). The contribution of the AHE systematically increases as the tilted angle of the substrate increases. The asymmetric hysteresis of the PHR in the Fe films grown on the tilted substrate provides four distinct resistance states, which can be used for quaternary memory devices.
| Original language | English |
|---|---|
| Article number | 09C505 |
| Journal | Journal of Applied Physics |
| Volume | 107 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2010 May 1 |
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Asymmetry in the planar Hall resistance of Fe films grown on vicinal GaAs substrates. / Yoo, Taehee; Khym, S.; Lee, Hakjoon; Chung, Sunjae; Lee, Sang Hoon; Liu, X.; Furdyna, J. K.
In: Journal of Applied Physics, Vol. 107, No. 9, 09C505, 01.05.2010.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Asymmetry in the planar Hall resistance of Fe films grown on vicinal GaAs substrates
AU - Yoo, Taehee
AU - Khym, S.
AU - Lee, Hakjoon
AU - Chung, Sunjae
AU - Lee, Sang Hoon
AU - Liu, X.
AU - Furdyna, J. K.
PY - 2010/5/1
Y1 - 2010/5/1
N2 - We have investigated the Hall effects of the ferromagnetic Fe films grown on standard (001) and on vicinal (i.e., slightly tilted toward the [1 1- 0] direction) GaAs substrates at room temperature. While the symmetric hysteresis in the planar Hall resistance (PHR) is obtained from Fe film grown nominal (001) substrate, a significant asymmetry appeared in the Fe films grown on vicinal GaAs substrates. The asymmetry in the hysteresis of the PHR observed in the Fe film grown on vicinal surface originates from the switching of magnetization M between two easy axes while it is confined to the (001) crystal plane rather than to the film plane, thus involves both the planar Hall effect (PHE) and the anomalous Hall effect (AHE). The contribution of the AHE systematically increases as the tilted angle of the substrate increases. The asymmetric hysteresis of the PHR in the Fe films grown on the tilted substrate provides four distinct resistance states, which can be used for quaternary memory devices.
AB - We have investigated the Hall effects of the ferromagnetic Fe films grown on standard (001) and on vicinal (i.e., slightly tilted toward the [1 1- 0] direction) GaAs substrates at room temperature. While the symmetric hysteresis in the planar Hall resistance (PHR) is obtained from Fe film grown nominal (001) substrate, a significant asymmetry appeared in the Fe films grown on vicinal GaAs substrates. The asymmetry in the hysteresis of the PHR observed in the Fe film grown on vicinal surface originates from the switching of magnetization M between two easy axes while it is confined to the (001) crystal plane rather than to the film plane, thus involves both the planar Hall effect (PHE) and the anomalous Hall effect (AHE). The contribution of the AHE systematically increases as the tilted angle of the substrate increases. The asymmetric hysteresis of the PHR in the Fe films grown on the tilted substrate provides four distinct resistance states, which can be used for quaternary memory devices.
UR - http://www.scopus.com/inward/record.url?scp=77951675668&partnerID=8YFLogxK
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U2 - 10.1063/1.3355549
DO - 10.1063/1.3355549
M3 - Article
AN - SCOPUS:77951675668
VL - 107
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 9
M1 - 09C505
ER -