@article{d609916d36ef45a0a90132ae2d7d8a2f,
title = "Asymmetry in the planar Hall resistance of Fe films grown on vicinal GaAs substrates",
abstract = "We have investigated the Hall effects of the ferromagnetic Fe films grown on standard (001) and on vicinal (i.e., slightly tilted toward the [1 1- 0] direction) GaAs substrates at room temperature. While the symmetric hysteresis in the planar Hall resistance (PHR) is obtained from Fe film grown nominal (001) substrate, a significant asymmetry appeared in the Fe films grown on vicinal GaAs substrates. The asymmetry in the hysteresis of the PHR observed in the Fe film grown on vicinal surface originates from the switching of magnetization M between two easy axes while it is confined to the (001) crystal plane rather than to the film plane, thus involves both the planar Hall effect (PHE) and the anomalous Hall effect (AHE). The contribution of the AHE systematically increases as the tilted angle of the substrate increases. The asymmetric hysteresis of the PHR in the Fe films grown on the tilted substrate provides four distinct resistance states, which can be used for quaternary memory devices.",
author = "Taehee Yoo and S. Khym and Hakjoon Lee and Sunjae Chung and Sanghoon Lee and X. Liu and Furdyna, {J. K.}",
note = "Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant No. 2009-0057687), by the Seoul R&DB Program (Grant No. 10543), and by the National Science Foundation Grant No. DMR06-03762. FIG. 1. Schematic diagram for the Hall bar patterned on the Fe film. The film plane is tilted by angle α from the (001) crystal plane. FIG. 2. Field and angular scans of Hall resistance for four Fe films grown on GaAs substrates with different surface inclinations. (Left column) Hall resistances R x y measured at φ H = 70 ° relative to the direction of the current i at room temperature. (Right column) Angular dependences of Hall resistance observed at room temperature for the same vicinal Fe films. FIG. 3. Dependence of R PHE and R AHE on tilt angle of Fe films. The contribution of R PHE to the measured Hall resistance decreases monotonically with increasing tilt angle α , while that of R AHE systematically increases with α . The dotted lines show the relations R PHE ∼ M 2 cos 2 α and R AHE ∼ M sin α which represent the respective contributions of the PHE and the AHE to R x y . ",
year = "2010",
month = may,
day = "1",
doi = "10.1063/1.3355549",
language = "English",
volume = "107",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "9",
}