Asymmetry in the reorientation process of magnetization for crossing the [1 1- 0] and the [110] directions in Ga1-x Mnx As epilayers

Yungjun Kim, Sunjae Chung, Sang Hoon Lee, X. Liu, J. K. Furdyna

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The magnetization reversal processes of ferromagnetic Ga 1-xMnx As films with different Mn concentrations have been investigated using the planar Hall effect. The field scan of the planar Hall resistance (PHR) showed an asymmetric behavior for the reorientation of magnetization crossing the [1 1- 0] and the [110] directions. The magnetic anisotropy fields and the domain pinning field distributions of the films are obtained from the angle dependence of the PHR measurements. The magnetic anisotropy and pinning field distribution in the samples provided explanation for the observed asymmetric behavior in the magnetization reorientation process of Ga1-xMnx As film.

Original languageEnglish
Article number09C304
JournalJournal of Applied Physics
Volume107
Issue number9
DOIs
Publication statusPublished - 2010 May 1

Fingerprint

retraining
Hall resistance
asymmetry
magnetization
anisotropy
Hall effect

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Asymmetry in the reorientation process of magnetization for crossing the [1 1- 0] and the [110] directions in Ga1-x Mnx As epilayers. / Kim, Yungjun; Chung, Sunjae; Lee, Sang Hoon; Liu, X.; Furdyna, J. K.

In: Journal of Applied Physics, Vol. 107, No. 9, 09C304, 01.05.2010.

Research output: Contribution to journalArticle

@article{1c0d3dbae7214fde84f1f1e644065708,
title = "Asymmetry in the reorientation process of magnetization for crossing the [1 1- 0] and the [110] directions in Ga1-x Mnx As epilayers",
abstract = "The magnetization reversal processes of ferromagnetic Ga 1-xMnx As films with different Mn concentrations have been investigated using the planar Hall effect. The field scan of the planar Hall resistance (PHR) showed an asymmetric behavior for the reorientation of magnetization crossing the [1 1- 0] and the [110] directions. The magnetic anisotropy fields and the domain pinning field distributions of the films are obtained from the angle dependence of the PHR measurements. The magnetic anisotropy and pinning field distribution in the samples provided explanation for the observed asymmetric behavior in the magnetization reorientation process of Ga1-xMnx As film.",
author = "Yungjun Kim and Sunjae Chung and Lee, {Sang Hoon} and X. Liu and Furdyna, {J. K.}",
year = "2010",
month = "5",
day = "1",
doi = "10.1063/1.3352977",
language = "English",
volume = "107",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "9",

}

TY - JOUR

T1 - Asymmetry in the reorientation process of magnetization for crossing the [1 1- 0] and the [110] directions in Ga1-x Mnx As epilayers

AU - Kim, Yungjun

AU - Chung, Sunjae

AU - Lee, Sang Hoon

AU - Liu, X.

AU - Furdyna, J. K.

PY - 2010/5/1

Y1 - 2010/5/1

N2 - The magnetization reversal processes of ferromagnetic Ga 1-xMnx As films with different Mn concentrations have been investigated using the planar Hall effect. The field scan of the planar Hall resistance (PHR) showed an asymmetric behavior for the reorientation of magnetization crossing the [1 1- 0] and the [110] directions. The magnetic anisotropy fields and the domain pinning field distributions of the films are obtained from the angle dependence of the PHR measurements. The magnetic anisotropy and pinning field distribution in the samples provided explanation for the observed asymmetric behavior in the magnetization reorientation process of Ga1-xMnx As film.

AB - The magnetization reversal processes of ferromagnetic Ga 1-xMnx As films with different Mn concentrations have been investigated using the planar Hall effect. The field scan of the planar Hall resistance (PHR) showed an asymmetric behavior for the reorientation of magnetization crossing the [1 1- 0] and the [110] directions. The magnetic anisotropy fields and the domain pinning field distributions of the films are obtained from the angle dependence of the PHR measurements. The magnetic anisotropy and pinning field distribution in the samples provided explanation for the observed asymmetric behavior in the magnetization reorientation process of Ga1-xMnx As film.

UR - http://www.scopus.com/inward/record.url?scp=77951698262&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77951698262&partnerID=8YFLogxK

U2 - 10.1063/1.3352977

DO - 10.1063/1.3352977

M3 - Article

AN - SCOPUS:77951698262

VL - 107

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 9

M1 - 09C304

ER -