Asymmetry in the reorientation process of magnetization for crossing the [1 1- 0] and the [110] directions in Ga1-x Mnx As epilayers

Yungjun Kim, Sunjae Chung, Sang Hoon Lee, X. Liu, J. K. Furdyna

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Abstract

The magnetization reversal processes of ferromagnetic Ga 1-xMnx As films with different Mn concentrations have been investigated using the planar Hall effect. The field scan of the planar Hall resistance (PHR) showed an asymmetric behavior for the reorientation of magnetization crossing the [1 1- 0] and the [110] directions. The magnetic anisotropy fields and the domain pinning field distributions of the films are obtained from the angle dependence of the PHR measurements. The magnetic anisotropy and pinning field distribution in the samples provided explanation for the observed asymmetric behavior in the magnetization reorientation process of Ga1-xMnx As film.

Original languageEnglish
Article number09C304
JournalJournal of Applied Physics
Volume107
Issue number9
DOIs
Publication statusPublished - 2010 May 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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