Atmosphere pressure dependent electrical properties of the ZnO nanowire transistors

E. K. Kim, H. Y. Lee, J. Park, S. E. Moon, S. Maeng, K. H. Park, H. J. Ji, S. J. Park, G. T. Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Semiconducting nanowire devices were fabricated using photolithography and e-beam lithography, and their electrical properties were studied. Atmosphere pressure dependent electrical properties of the ZnO nanowire field effect transistor (FET) were studied and its analysis methods with PSPICE simulation were applied to explain the conductance changes in nanowire devices. A single ZnO nanowire FET was fabricated by electron beam lithography and its current-voltage characteristics were recorded with varying the atmosphere pressure to test the possible applications as a chemical gas sensor. Current-voltage characteristics showed typical non-ohmic behaviors, reflecting the influence of the contact barriers formed between the ZnO nanowire FET and metal electrodes. In this paper, an equivalent circuit model of the ZnO nanowire FET is suggested in order to model the contact barriers in nanowire devices, showing that most changes of the electrical conductance might originate from the contact region.

Original languageEnglish
Title of host publication2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages428-429
Number of pages2
DOIs
Publication statusPublished - 2006 Dec 1
Event2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of
Duration: 2006 Oct 222006 Oct 25

Publication series

Name2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Volume1

Other

Other2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
CountryKorea, Republic of
CityGyeongju
Period06/10/2206/10/25

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Keywords

  • Equivalent circuit
  • Field effect transisor
  • ZnO nanowire

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)

Cite this

Kim, E. K., Lee, H. Y., Park, J., Moon, S. E., Maeng, S., Park, K. H., Ji, H. J., Park, S. J., & Kim, G. T. (2006). Atmosphere pressure dependent electrical properties of the ZnO nanowire transistors. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC (pp. 428-429). [4388800] (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1). https://doi.org/10.1109/NMDC.2006.4388800