Atomic force microscope study of two-dimensional dopant delineation by selective chemical etching

Kwang Ki Choi, Tae Yeon Seong, Seonghoon Lee, Hyunsang Hwang, Yong Sun Sohn

Research output: Contribution to journalConference article

Abstract

Selective chemical etching and atomic force microscope (AFM) examination has been performed to delineate two-dimensional (2-D) dopants profiles of p/n-type well and junction areas. Selectivity strongly depended on the types of dopants and the ratio of etching solutions. Calibration showed that the carrier concentrations in both p/n-type regions could be delineated down to a level of approx. 1×1017/cm3. The AFM-induced profiles were compared with the calculated data provided by the 2-D process simulators such as TRIM and SUPREM-IV.

Original languageEnglish
Pages (from-to)53-58
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume490
Publication statusPublished - 1998 Dec 1
Externally publishedYes
EventProceedings of the 1997 MRS Fall Symposium - Boston, MA, USA
Duration: 1997 Dec 21997 Dec 4

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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