Atomic force microscope study of two-dimensional dopant delineation by selective chemical etching

Kwang Ki Choi, Tae Yeon Seong, Seonghoon Lee, Hyunsang Hwang, Yong Sun Sohn

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Selective chemical etching and atomic force microscope (AFM) examination has been performed to delineate two-dimensional (2-D) dopants profiles of p/n-type well and junction areas. Selectivity strongly depended on the types of dopants and the ratio of etching solutions. Calibration showed that the carrier concentrations in both p/n-type regions could be delineated down to a level of approx. 1×10 17/cm 3. The AFM-induced profiles were compared with the calculated data provided by the 2-D process simulators such as TRIM and SUPREM-IV.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsN.M. Rodrigues, S.L. Soled, J. Hrbek
PublisherMRS
Pages53-58
Number of pages6
Volume490
Publication statusPublished - 1998
Externally publishedYes
EventProceedings of the 1997 MRS Fall Symposium - Boston, MA, USA
Duration: 1997 Dec 21997 Dec 4

Other

OtherProceedings of the 1997 MRS Fall Symposium
CityBoston, MA, USA
Period97/12/297/12/4

Fingerprint

Etching
Microscopes
Doping (additives)
Carrier concentration
Simulators
Calibration

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Choi, K. K., Seong, T. Y., Lee, S., Hwang, H., & Sohn, Y. S. (1998). Atomic force microscope study of two-dimensional dopant delineation by selective chemical etching. In N. M. Rodrigues, S. L. Soled, & J. Hrbek (Eds.), Materials Research Society Symposium - Proceedings (Vol. 490, pp. 53-58). MRS.

Atomic force microscope study of two-dimensional dopant delineation by selective chemical etching. / Choi, Kwang Ki; Seong, Tae Yeon; Lee, Seonghoon; Hwang, Hyunsang; Sohn, Yong Sun.

Materials Research Society Symposium - Proceedings. ed. / N.M. Rodrigues; S.L. Soled; J. Hrbek. Vol. 490 MRS, 1998. p. 53-58.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Choi, KK, Seong, TY, Lee, S, Hwang, H & Sohn, YS 1998, Atomic force microscope study of two-dimensional dopant delineation by selective chemical etching. in NM Rodrigues, SL Soled & J Hrbek (eds), Materials Research Society Symposium - Proceedings. vol. 490, MRS, pp. 53-58, Proceedings of the 1997 MRS Fall Symposium, Boston, MA, USA, 97/12/2.
Choi KK, Seong TY, Lee S, Hwang H, Sohn YS. Atomic force microscope study of two-dimensional dopant delineation by selective chemical etching. In Rodrigues NM, Soled SL, Hrbek J, editors, Materials Research Society Symposium - Proceedings. Vol. 490. MRS. 1998. p. 53-58
Choi, Kwang Ki ; Seong, Tae Yeon ; Lee, Seonghoon ; Hwang, Hyunsang ; Sohn, Yong Sun. / Atomic force microscope study of two-dimensional dopant delineation by selective chemical etching. Materials Research Society Symposium - Proceedings. editor / N.M. Rodrigues ; S.L. Soled ; J. Hrbek. Vol. 490 MRS, 1998. pp. 53-58
@inproceedings{f5237d190ad24639af84654f9b60d905,
title = "Atomic force microscope study of two-dimensional dopant delineation by selective chemical etching",
abstract = "Selective chemical etching and atomic force microscope (AFM) examination has been performed to delineate two-dimensional (2-D) dopants profiles of p/n-type well and junction areas. Selectivity strongly depended on the types of dopants and the ratio of etching solutions. Calibration showed that the carrier concentrations in both p/n-type regions could be delineated down to a level of approx. 1×10 17/cm 3. The AFM-induced profiles were compared with the calculated data provided by the 2-D process simulators such as TRIM and SUPREM-IV.",
author = "Choi, {Kwang Ki} and Seong, {Tae Yeon} and Seonghoon Lee and Hyunsang Hwang and Sohn, {Yong Sun}",
year = "1998",
language = "English",
volume = "490",
pages = "53--58",
editor = "N.M. Rodrigues and S.L. Soled and J. Hrbek",
booktitle = "Materials Research Society Symposium - Proceedings",
publisher = "MRS",

}

TY - GEN

T1 - Atomic force microscope study of two-dimensional dopant delineation by selective chemical etching

AU - Choi, Kwang Ki

AU - Seong, Tae Yeon

AU - Lee, Seonghoon

AU - Hwang, Hyunsang

AU - Sohn, Yong Sun

PY - 1998

Y1 - 1998

N2 - Selective chemical etching and atomic force microscope (AFM) examination has been performed to delineate two-dimensional (2-D) dopants profiles of p/n-type well and junction areas. Selectivity strongly depended on the types of dopants and the ratio of etching solutions. Calibration showed that the carrier concentrations in both p/n-type regions could be delineated down to a level of approx. 1×10 17/cm 3. The AFM-induced profiles were compared with the calculated data provided by the 2-D process simulators such as TRIM and SUPREM-IV.

AB - Selective chemical etching and atomic force microscope (AFM) examination has been performed to delineate two-dimensional (2-D) dopants profiles of p/n-type well and junction areas. Selectivity strongly depended on the types of dopants and the ratio of etching solutions. Calibration showed that the carrier concentrations in both p/n-type regions could be delineated down to a level of approx. 1×10 17/cm 3. The AFM-induced profiles were compared with the calculated data provided by the 2-D process simulators such as TRIM and SUPREM-IV.

UR - http://www.scopus.com/inward/record.url?scp=0032292707&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032292707&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0032292707

VL - 490

SP - 53

EP - 58

BT - Materials Research Society Symposium - Proceedings

A2 - Rodrigues, N.M.

A2 - Soled, S.L.

A2 - Hrbek, J.

PB - MRS

ER -