Abstract
The correlation of surface morphology with strain relaxation in the In0.15Ga0.85As epilayer on GaAs(100) grown by chemical beam epitaxy using unprecracked monoethylarsine has been investigated. The surface morphology of InGaAs was analyzed by atomic force microscopy as the epilayer thickness was increased from 0.025 to 1.668 μm. The changes in the surface morphology indicated that surface roughening is related to the process of strain relaxation in the film. The strain-induced shifts in the GaAs-like longitudinal optical phonon in the Raman spectrum also indicated that the strains in the InGaAs epilayer relax via step-wise process with increasing the film thickness beyond the critical thickness, which agrees well with the changes of surface morphology.
| Original language | English |
|---|---|
| Pages (from-to) | 21-26 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 355 |
| Publication status | Published - 1995 |
| Externally published | Yes |
| Event | Proceedings of the 1994 MRS Fall Meeting - Boston, MA, USA Duration: 1994 Nov 28 → 1994 Dec 1 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering