Atomic force microscopy study of GaN-buffer layers on SiC(0001) by MOCVD

Dongsup Lim, Dong Jin Byun, Gyeungho Kim, Ok Hyun Nam, In Hoon Choi, Dalkeun Park, Dong Wha Kum

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)


Buffer layers promote lateral growth of films due to a decrease in interfacial free energy between the film and substrate, and large 2-dimensional nucleation. Smooth surfaces of the buffer layers are desired. Optimum conditions for GaN-buffer growth on the vicinal surface of 6H-SiC(0001) were determined by atomic force microscope (AFM). AFM analysis of the GaN nucleation layers led to an optimum growth conditions of the GaN-buffer layer which was confirmed by cross-sectional transmission electron microscopy, Hall measurements and photoluminescence spectra. Optimum growth conditions for GaN-buffer layer on SiC(0001) was determined to be 1 minute growing at 550 °C.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Number of pages6
Publication statusPublished - 1996
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: 1996 Apr 81996 Apr 12


OtherProceedings of the 1996 MRS Spring Symposium
CitySan Francisco, CA, USA


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Lim, D., Byun, D. J., Kim, G., Nam, O. H., Choi, I. H., Park, D., & Kum, D. W. (1996). Atomic force microscopy study of GaN-buffer layers on SiC(0001) by MOCVD. In Materials Research Society Symposium - Proceedings (Vol. 423, pp. 451-456). Materials Research Society.