Atomic force microscopy study of GaN-buffer layers on SiC(0001) by MOCVD

Dongsup Lim, Dong Jin Byun, Gyeungho Kim, Ok Hyun Nam, In Hoon Choi, Dalkeun Park, Dong Wha Kum

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Buffer layers promote lateral growth of films due to a decrease in interfacial free energy between the film and substrate, and large 2-dimensional nucleation. Smooth surfaces of the buffer layers are desired. Optimum conditions for GaN-buffer growth on the vicinal surface of 6H-SiC(0001) were determined by atomic force microscope (AFM). AFM analysis of the GaN nucleation layers led to an optimum growth conditions of the GaN-buffer layer which was confirmed by cross-sectional transmission electron microscopy, Hall measurements and photoluminescence spectra. Optimum growth conditions for GaN-buffer layer on SiC(0001) was determined to be 1 minute growing at 550 °C.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages451-456
Number of pages6
Volume423
Publication statusPublished - 1996
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: 1996 Apr 81996 Apr 12

Other

OtherProceedings of the 1996 MRS Spring Symposium
CitySan Francisco, CA, USA
Period96/4/896/4/12

Fingerprint

Metallorganic chemical vapor deposition
Buffer layers
Atomic force microscopy
Microscopes
Nucleation
Free energy
Photoluminescence
Buffers
Transmission electron microscopy
Substrates

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Lim, D., Byun, D. J., Kim, G., Nam, O. H., Choi, I. H., Park, D., & Kum, D. W. (1996). Atomic force microscopy study of GaN-buffer layers on SiC(0001) by MOCVD. In Materials Research Society Symposium - Proceedings (Vol. 423, pp. 451-456). Materials Research Society.

Atomic force microscopy study of GaN-buffer layers on SiC(0001) by MOCVD. / Lim, Dongsup; Byun, Dong Jin; Kim, Gyeungho; Nam, Ok Hyun; Choi, In Hoon; Park, Dalkeun; Kum, Dong Wha.

Materials Research Society Symposium - Proceedings. Vol. 423 Materials Research Society, 1996. p. 451-456.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lim, D, Byun, DJ, Kim, G, Nam, OH, Choi, IH, Park, D & Kum, DW 1996, Atomic force microscopy study of GaN-buffer layers on SiC(0001) by MOCVD. in Materials Research Society Symposium - Proceedings. vol. 423, Materials Research Society, pp. 451-456, Proceedings of the 1996 MRS Spring Symposium, San Francisco, CA, USA, 96/4/8.
Lim D, Byun DJ, Kim G, Nam OH, Choi IH, Park D et al. Atomic force microscopy study of GaN-buffer layers on SiC(0001) by MOCVD. In Materials Research Society Symposium - Proceedings. Vol. 423. Materials Research Society. 1996. p. 451-456
Lim, Dongsup ; Byun, Dong Jin ; Kim, Gyeungho ; Nam, Ok Hyun ; Choi, In Hoon ; Park, Dalkeun ; Kum, Dong Wha. / Atomic force microscopy study of GaN-buffer layers on SiC(0001) by MOCVD. Materials Research Society Symposium - Proceedings. Vol. 423 Materials Research Society, 1996. pp. 451-456
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