Atomic force microscopy study of GaN-buffer layers on SiC(0001) by MOCVD

Dongsup Lim, Dongjin Byun, Gyeungho Kim, Ok Hyun Nam, In Hoon Choi, Dalkeun Park, Dong Wha Kum

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

Buffer layers promote lateral growth of films due to a decrease in interfacial free energy between the film and substrate, and large 2-dimensional nucleation. Smooth surfaces of the buffer layers are desired. Optimum conditions for GaN-buffer growth on the vicinal surface of 6H-SiC(0001) were determined by atomic force microscope (AFM). AFM analysis of the GaN nucleation layers led to an optimum growth conditions of the GaN-buffer layer which was confirmed by cross-sectional transmission electron microscopy, Hall measurements and photoluminescence spectra. Optimum growth conditions for GaN-buffer layer on SiC(0001) was determined to be 1 minute growing at 550 °C.

Original languageEnglish
Pages (from-to)451-456
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume423
DOIs
Publication statusPublished - 1996
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: 1996 Apr 81996 Apr 12

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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