Atomic layer deposition of ruthenium in various precursors and oxygen doses

Jun Woo Kim, Kyung Sik Son, Byungwoo Kim, Woong Kim, Joon Hyung Shim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Atomic layer deposition (ALD) of Ru films under various precursor and oxidant supply conditions was carried out at 320°C on silicon wafers. The Ru precursor used was bis(ethylcyclopentadienyl) ruthenium [Ru(EtCp)2], and oxygen gas was used as the oxidant. The Ru precursor pulse time, oxygen pulse time, and oxygen flow rate were varied, and the effects of these parameters on the morphology of the deposited films were analyzed using scanning electron microscope (SEM) and X-ray diffraction (XRD) analysis. The films showed hollow shell-like bumps, indicating that film growth began with a reaction in the gas phase or in physically adsorbed states. A mismatch between the thermal expansion coefficients of Si and Ru or the existence of residues on the wafer surfaces was suspected to be responsible for the hollow shell-like structures. However, the results of energy-dispersive X-ray spectroscopy (EDS) proved that the latter was not the case.

Original languageEnglish
Title of host publicationAtomic Layer Deposition Applications 8
Pages165-171
Number of pages7
Edition13
DOIs
Publication statusPublished - 2012
EventSymposium on Atomic Layer Deposition Applications 8 - 222nd ECS Meeting/PRiME 2012 - Honolulu, HI, United States
Duration: 2012 Oct 72012 Oct 12

Publication series

NameECS Transactions
Number13
Volume50
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSymposium on Atomic Layer Deposition Applications 8 - 222nd ECS Meeting/PRiME 2012
CountryUnited States
CityHonolulu, HI
Period12/10/712/10/12

ASJC Scopus subject areas

  • Engineering(all)

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    Kim, J. W., Son, K. S., Kim, B., Kim, W., & Shim, J. H. (2012). Atomic layer deposition of ruthenium in various precursors and oxygen doses. In Atomic Layer Deposition Applications 8 (13 ed., pp. 165-171). (ECS Transactions; Vol. 50, No. 13). https://doi.org/10.1149/05013.0165ecst