Atomic-level strain-relieving mechanism and local electronic structure of a wetting film

Tae Hwan Kim, Jungpil Seo, Byoung Young Choi, Young Jae Song, Jehyuk Choi, Young Kuk, Se-Jong Kahng

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The strain-relieving mechanism and local electronic density of states of a wetting film, was studied in the AgW system using scanning tunneling microscopy and spectroscopy. In the Ag wetting film, a periodic bright ridge structure was observed along the two equivalent directions, relieving mixed compressive-tensile strain. Two unoccupied electronic states were observed between the ridges, while the other two occupied electronic states were observed at the ridges. The Ag atoms occupying the bridge sites contribute to relieve the elastic strain and to induce the occupied electronic states.

Original languageEnglish
Article number123112
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number12
DOIs
Publication statusPublished - 2005 Sep 19

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relieving
wetting
electronic structure
ridges
electronics
scanning tunneling microscopy
spectroscopy
atoms

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Atomic-level strain-relieving mechanism and local electronic structure of a wetting film. / Kim, Tae Hwan; Seo, Jungpil; Choi, Byoung Young; Song, Young Jae; Choi, Jehyuk; Kuk, Young; Kahng, Se-Jong.

In: Applied Physics Letters, Vol. 87, No. 12, 123112, 19.09.2005, p. 1-3.

Research output: Contribution to journalArticle

Kim, Tae Hwan ; Seo, Jungpil ; Choi, Byoung Young ; Song, Young Jae ; Choi, Jehyuk ; Kuk, Young ; Kahng, Se-Jong. / Atomic-level strain-relieving mechanism and local electronic structure of a wetting film. In: Applied Physics Letters. 2005 ; Vol. 87, No. 12. pp. 1-3.
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