Atomic-level strain-relieving mechanism and local electronic structure of a wetting film

Tae Hwan Kim; Jungpil Seo; Byoung Young Choi; Young Jae Song; Jehyuk Choi; Young Kuk; Se Jong Kahng

doi:10.1063/1.2035325

Atomic-level strain-relieving mechanism and local electronic structure of a wetting film

Tae Hwan Kim, Jungpil Seo, Byoung Young Choi, Young Jae Song, Jehyuk Choi, Young Kuk, Se Jong Kahng

Department of Physics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The strain-relieving mechanism and local electronic density of states of a wetting film, was studied in the AgW system using scanning tunneling microscopy and spectroscopy. In the Ag wetting film, a periodic bright ridge structure was observed along the two equivalent directions, relieving mixed compressive-tensile strain. Two unoccupied electronic states were observed between the ridges, while the other two occupied electronic states were observed at the ridges. The Ag atoms occupying the bridge sites contribute to relieve the elastic strain and to induce the occupied electronic states.

Original language	English
Article number	123112
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	12
DOIs	https://doi.org/10.1063/1.2035325
Publication status	Published - 2005 Sept 19

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2035325

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title = "Atomic-level strain-relieving mechanism and local electronic structure of a wetting film",

abstract = "The strain-relieving mechanism and local electronic density of states of a wetting film, was studied in the AgW system using scanning tunneling microscopy and spectroscopy. In the Ag wetting film, a periodic bright ridge structure was observed along the two equivalent directions, relieving mixed compressive-tensile strain. Two unoccupied electronic states were observed between the ridges, while the other two occupied electronic states were observed at the ridges. The Ag atoms occupying the bridge sites contribute to relieve the elastic strain and to induce the occupied electronic states.",

author = "Kim, {Tae Hwan} and Jungpil Seo and Choi, {Byoung Young} and Song, {Young Jae} and Jehyuk Choi and Young Kuk and Kahng, {Se Jong}",

note = "Funding Information: The authors acknowledge financial support by the Ministry of Science and Technology of Korea (National Creative Research Initiatives and National R&D Project for Nano- Science and Technology), by the Ministry of Commerce, Industry and Energy of Korea (Nano-Standard Project), and by Korea Research Foundation (KRF-2004-005-C00060).",

year = "2005",

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doi = "10.1063/1.2035325",

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AU - Kim, Tae Hwan

AU - Seo, Jungpil

AU - Choi, Byoung Young

AU - Song, Young Jae

AU - Choi, Jehyuk

AU - Kuk, Young

AU - Kahng, Se Jong

N1 - Funding Information: The authors acknowledge financial support by the Ministry of Science and Technology of Korea (National Creative Research Initiatives and National R&D Project for Nano- Science and Technology), by the Ministry of Commerce, Industry and Energy of Korea (Nano-Standard Project), and by Korea Research Foundation (KRF-2004-005-C00060).

PY - 2005/9/19

Y1 - 2005/9/19

N2 - The strain-relieving mechanism and local electronic density of states of a wetting film, was studied in the AgW system using scanning tunneling microscopy and spectroscopy. In the Ag wetting film, a periodic bright ridge structure was observed along the two equivalent directions, relieving mixed compressive-tensile strain. Two unoccupied electronic states were observed between the ridges, while the other two occupied electronic states were observed at the ridges. The Ag atoms occupying the bridge sites contribute to relieve the elastic strain and to induce the occupied electronic states.

AB - The strain-relieving mechanism and local electronic density of states of a wetting film, was studied in the AgW system using scanning tunneling microscopy and spectroscopy. In the Ag wetting film, a periodic bright ridge structure was observed along the two equivalent directions, relieving mixed compressive-tensile strain. Two unoccupied electronic states were observed between the ridges, while the other two occupied electronic states were observed at the ridges. The Ag atoms occupying the bridge sites contribute to relieve the elastic strain and to induce the occupied electronic states.

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Atomic-level strain-relieving mechanism and local electronic structure of a wetting film

Abstract

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