Atomic ordering and domain structures in metal organic chemical vapor deposition grown InGaAs (001) layers

Tae Yeon Seong, A. G. Norman, G. R. Booker, A. G. Cullis

Research output: Contribution to journalArticle

39 Citations (Scopus)

Abstract

Transmission electron microscope, transmission electron diffraction, and high resolution electron microscope studies have been made of metal organic chemical vapor deposition In 0.53Ga 0.47As layers grown on (001) InP or GaAs substrates to investigate the CuPt-type atomic ordering and associated microstructures present. The amount of ordering, the geometry of the (1̄11) and (11̄1) ordered domains, and the occurrence of anti-phase boundaries (APBs) were determined as a function of the layer growth temperature and rate. The results are interpreted in terms of mechanisms involving ordering at the layer surface and disordering in a transition region below the surface. From a consideration of the former it is concluded that atomic steps associated with surface undulations have a major influence on the domain geometry and APBs. The different structures that occur, their dependence on growth conditions and their possible effects on the electrical and optical properties are discussed.

Original languageEnglish
Pages (from-to)7852-7865
Number of pages14
JournalJournal of Applied Physics
Volume75
Issue number12
DOIs
Publication statusPublished - 1994 Dec 1
Externally publishedYes

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antiphase boundaries
metalorganic chemical vapor deposition
electron microscopes
geometry
surface layers
electron diffraction
electrical properties
occurrences
optical properties
microstructure
high resolution
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Atomic ordering and domain structures in metal organic chemical vapor deposition grown InGaAs (001) layers. / Seong, Tae Yeon; Norman, A. G.; Booker, G. R.; Cullis, A. G.

In: Journal of Applied Physics, Vol. 75, No. 12, 01.12.1994, p. 7852-7865.

Research output: Contribution to journalArticle

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