Atomic-scale engineering of the electrostatic landscape of semiconductor surfaces

David Gohlke, Rohan Mishra, Oscar D. Restrepo, Donghun Lee, Wolfgang Windl, Jay Gupta

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

A low-temperature scanning tunneling microscope was used in conjunction with density functional theory calculations to determine the binding sites and charge states of adsorbed Ga and Mn atoms on GaAs(110). To quantify the adatom charge states (both +1e), the Coulomb interaction with an individual Mn acceptor is measured via tunneling spectroscopy and compared with theoretical predictions. Several methods for positioning these charged adatoms are demonstrated, allowing us to engineer the electrostatic landscape of the surface with atomic precision.

Original languageEnglish
Pages (from-to)2418-2422
Number of pages5
JournalNano Letters
Volume13
Issue number6
DOIs
Publication statusPublished - 2013 Jun 12

Keywords

  • GaAs
  • Surface potential
  • atomic manipulation
  • charged adatoms
  • solotronics

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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  • Cite this

    Gohlke, D., Mishra, R., Restrepo, O. D., Lee, D., Windl, W., & Gupta, J. (2013). Atomic-scale engineering of the electrostatic landscape of semiconductor surfaces. Nano Letters, 13(6), 2418-2422. https://doi.org/10.1021/nl400305q