Atomic scale faceting and its effect on the grain size distribution of SnO2 thin films during deposition

J. Jeong; S. P. Choi; K. J. Hong; Y. T. O; H. J. Song; J. B. Koo; I. H. Lee; J. S. Park; D. C. Shin

doi:10.1016/j.mseb.2004.01.019

Atomic scale faceting and its effect on the grain size distribution of SnO₂ thin films during deposition

J. Jeong, S. P. Choi, K. J. Hong, Y. T. O, H. J. Song, J. B. Koo, I. H. Lee, J. S. Park, D. C. Shin

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Abnormal grain growth (AGG) occurs when SnO₂ thin films are deposited by conventional thermal CVD at 475°C, and high-resolution transmission electron microscopy shows some of the interfaces to be atomically faceted. However, when deposited at 525°C normal grain growth (NGG) occurs with all the interfaces smoothly curved and atomically rough. This correlation between interface structure and grain growth behavior is consistent with that observed previously in bulk materials. For the application of SnO₂ thin films in sensors and transparent electrodes, 525°C, which is just above the faceting transition temperature, was found to be the optimum deposition temperature due to its small grain size and high surface to volume ratio.

Original language	English
Pages (from-to)	240-242
Number of pages	3
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	110
Issue number	3
DOIs	https://doi.org/10.1016/j.mseb.2004.01.019
Publication status	Published - 2004 Jul 25
Externally published	Yes

Keywords

Abnormal grain growth
Chemical vapor deposition
Faceting
Sensors
Thin films
Tin oxide

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/j.mseb.2004.01.019

Cite this

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title = "Atomic scale faceting and its effect on the grain size distribution of SnO2 thin films during deposition",

abstract = "Abnormal grain growth (AGG) occurs when SnO2 thin films are deposited by conventional thermal CVD at 475°C, and high-resolution transmission electron microscopy shows some of the interfaces to be atomically faceted. However, when deposited at 525°C normal grain growth (NGG) occurs with all the interfaces smoothly curved and atomically rough. This correlation between interface structure and grain growth behavior is consistent with that observed previously in bulk materials. For the application of SnO2 thin films in sensors and transparent electrodes, 525°C, which is just above the faceting transition temperature, was found to be the optimum deposition temperature due to its small grain size and high surface to volume ratio.",

keywords = "Abnormal grain growth, Chemical vapor deposition, Faceting, Sensors, Thin films, Tin oxide",

author = "J. Jeong and Choi, {S. P.} and Hong, {K. J.} and O, {Y. T.} and Song, {H. J.} and Koo, {J. B.} and Lee, {I. H.} and Park, {J. S.} and Shin, {D. C.}",

year = "2004",

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doi = "10.1016/j.mseb.2004.01.019",

language = "English",

volume = "110",

pages = "240--242",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

issn = "0921-5107",

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TY - JOUR

T1 - Atomic scale faceting and its effect on the grain size distribution of SnO2 thin films during deposition

AU - Jeong, J.

AU - Choi, S. P.

AU - Hong, K. J.

AU - O, Y. T.

AU - Song, H. J.

AU - Koo, J. B.

AU - Lee, I. H.

AU - Park, J. S.

AU - Shin, D. C.

PY - 2004/7/25

Y1 - 2004/7/25

N2 - Abnormal grain growth (AGG) occurs when SnO2 thin films are deposited by conventional thermal CVD at 475°C, and high-resolution transmission electron microscopy shows some of the interfaces to be atomically faceted. However, when deposited at 525°C normal grain growth (NGG) occurs with all the interfaces smoothly curved and atomically rough. This correlation between interface structure and grain growth behavior is consistent with that observed previously in bulk materials. For the application of SnO2 thin films in sensors and transparent electrodes, 525°C, which is just above the faceting transition temperature, was found to be the optimum deposition temperature due to its small grain size and high surface to volume ratio.

AB - Abnormal grain growth (AGG) occurs when SnO2 thin films are deposited by conventional thermal CVD at 475°C, and high-resolution transmission electron microscopy shows some of the interfaces to be atomically faceted. However, when deposited at 525°C normal grain growth (NGG) occurs with all the interfaces smoothly curved and atomically rough. This correlation between interface structure and grain growth behavior is consistent with that observed previously in bulk materials. For the application of SnO2 thin films in sensors and transparent electrodes, 525°C, which is just above the faceting transition temperature, was found to be the optimum deposition temperature due to its small grain size and high surface to volume ratio.

KW - Abnormal grain growth

KW - Chemical vapor deposition

KW - Faceting

KW - Sensors

KW - Thin films

KW - Tin oxide

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