Atomic scale faceting and its effect on the grain size distribution of SnO2 thin films during deposition

J. Jeong, S. P. Choi, K. J. Hong, Y. T. O, H. J. Song, J. B. Koo, I. H. Lee, J. S. Park, D. C. Shin

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Abnormal grain growth (AGG) occurs when SnO2 thin films are deposited by conventional thermal CVD at 475°C, and high-resolution transmission electron microscopy shows some of the interfaces to be atomically faceted. However, when deposited at 525°C normal grain growth (NGG) occurs with all the interfaces smoothly curved and atomically rough. This correlation between interface structure and grain growth behavior is consistent with that observed previously in bulk materials. For the application of SnO2 thin films in sensors and transparent electrodes, 525°C, which is just above the faceting transition temperature, was found to be the optimum deposition temperature due to its small grain size and high surface to volume ratio.

Original languageEnglish
Pages (from-to)240-242
Number of pages3
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume110
Issue number3
DOIs
Publication statusPublished - 2004 Jul 25

Keywords

  • Abnormal grain growth
  • Chemical vapor deposition
  • Faceting
  • Sensors
  • Thin films
  • Tin oxide

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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