Atomic structure and energetics of vacancies in a sublayer of GaAs(110)

Jae Yel Yi, Ja Yong Koo, Sekyung Lee, Dong Hyuk Shin, Jeong Sook Ha

Research output: Contribution to journalArticle

Abstract

The energetics and structure of vacancies in the second layer of GaAs(110) were examined using the ab initio total energy calculation method. Structural changes due to the presence of the vacancies are substantial. The changes are different in shape, depending on the type of vacancy and charged states. Both the Ga vacancy and the As vacancy in the second layer of the surface favor negatively charged states.

Original languageEnglish
Pages (from-to)55-59
Number of pages5
JournalSurface Review and Letters
Volume7
Issue number1-2
DOIs
Publication statusPublished - 2000 Oct 21
Externally publishedYes

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Crystal atomic structure
atomic structure
Vacancies
gallium arsenide

ASJC Scopus subject areas

  • Materials Science(all)
  • Surfaces and Interfaces
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Atomic structure and energetics of vacancies in a sublayer of GaAs(110). / Yi, Jae Yel; Koo, Ja Yong; Lee, Sekyung; Shin, Dong Hyuk; Ha, Jeong Sook.

In: Surface Review and Letters, Vol. 7, No. 1-2, 21.10.2000, p. 55-59.

Research output: Contribution to journalArticle

Yi, Jae Yel ; Koo, Ja Yong ; Lee, Sekyung ; Shin, Dong Hyuk ; Ha, Jeong Sook. / Atomic structure and energetics of vacancies in a sublayer of GaAs(110). In: Surface Review and Letters. 2000 ; Vol. 7, No. 1-2. pp. 55-59.
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