Abstract
We report on the observation of the 5(Formula presented)×5(Formula presented) atomic structure of an Sb-passivated Si(111) surface using low-energy electron diffraction and scanning tunneling microscopy (STM). A model of this structure has been derived from the analysis of high-resolution STM images. The stability of the Sb/Si(111)-5(Formula presented)×5(Formula presented) structure has been found to come from the saturation of dangling bonds and the site-selective replacement of Si atoms with Sb atoms. Strain induced by stacking faults and lattice mismatch is found to be responsible for the site selectivity in the replacement. The kinetics of formation is also discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 9267-9270 |
| Number of pages | 4 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 55 |
| Issue number | 15 |
| DOIs | |
| Publication status | Published - 1997 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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Park, K. H., Ha, J. S., Yun, W. S., Lee, E. H., & Yi, J. Y. (1997). Atomic structure and formation kinetics of the Sb/Si(111)-× surface. Physical Review B - Condensed Matter and Materials Physics, 55(15), 9267-9270. https://doi.org/10.1103/PhysRevB.55.9267