Abstract
We report on the observation of the 5(Formula presented)×5(Formula presented) atomic structure of an Sb-passivated Si(111) surface using low-energy electron diffraction and scanning tunneling microscopy (STM). A model of this structure has been derived from the analysis of high-resolution STM images. The stability of the Sb/Si(111)-5(Formula presented)×5(Formula presented) structure has been found to come from the saturation of dangling bonds and the site-selective replacement of Si atoms with Sb atoms. Strain induced by stacking faults and lattice mismatch is found to be responsible for the site selectivity in the replacement. The kinetics of formation is also discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 9267-9270 |
| Number of pages | 4 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 55 |
| Issue number | 15 |
| DOIs | |
| Publication status | Published - 1997 Jan 1 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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Atomic structure and formation kinetics of the Sb/Si(111)-× surface. / Park, Kang Ho; Ha, Jeong Sook; Yun, Wan Soo; Lee, El Hang; Yi, Jae Yel.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 55, No. 15, 01.01.1997, p. 9267-9270.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Atomic structure and formation kinetics of the Sb/Si(111)-× surface
AU - Park, Kang Ho
AU - Ha, Jeong Sook
AU - Yun, Wan Soo
AU - Lee, El Hang
AU - Yi, Jae Yel
PY - 1997/1/1
Y1 - 1997/1/1
N2 - We report on the observation of the 5(Formula presented)×5(Formula presented) atomic structure of an Sb-passivated Si(111) surface using low-energy electron diffraction and scanning tunneling microscopy (STM). A model of this structure has been derived from the analysis of high-resolution STM images. The stability of the Sb/Si(111)-5(Formula presented)×5(Formula presented) structure has been found to come from the saturation of dangling bonds and the site-selective replacement of Si atoms with Sb atoms. Strain induced by stacking faults and lattice mismatch is found to be responsible for the site selectivity in the replacement. The kinetics of formation is also discussed.
AB - We report on the observation of the 5(Formula presented)×5(Formula presented) atomic structure of an Sb-passivated Si(111) surface using low-energy electron diffraction and scanning tunneling microscopy (STM). A model of this structure has been derived from the analysis of high-resolution STM images. The stability of the Sb/Si(111)-5(Formula presented)×5(Formula presented) structure has been found to come from the saturation of dangling bonds and the site-selective replacement of Si atoms with Sb atoms. Strain induced by stacking faults and lattice mismatch is found to be responsible for the site selectivity in the replacement. The kinetics of formation is also discussed.
UR - http://www.scopus.com/inward/record.url?scp=0000600547&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0000600547&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.55.9267
DO - 10.1103/PhysRevB.55.9267
M3 - Article
VL - 55
SP - 9267
EP - 9270
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 1098-0121
IS - 15
ER -