Atomic structure and formation kinetics of the Sb/Si(111)-× surface

Kang Ho Park, Jeong Sook Ha, Wan Soo Yun, El Hang Lee, Jae Yel Yi

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

We report on the observation of the 5(Formula presented)×5(Formula presented) atomic structure of an Sb-passivated Si(111) surface using low-energy electron diffraction and scanning tunneling microscopy (STM). A model of this structure has been derived from the analysis of high-resolution STM images. The stability of the Sb/Si(111)-5(Formula presented)×5(Formula presented) structure has been found to come from the saturation of dangling bonds and the site-selective replacement of Si atoms with Sb atoms. Strain induced by stacking faults and lattice mismatch is found to be responsible for the site selectivity in the replacement. The kinetics of formation is also discussed.

Original languageEnglish
Pages (from-to)9267-9270
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume55
Issue number15
DOIs
Publication statusPublished - 1997 Jan 1
Externally publishedYes

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Scanning tunneling microscopy
atomic structure
Atoms
Lattice mismatch
Kinetics
Dangling bonds
Low energy electron diffraction
Stacking faults
kinetics
scanning tunneling microscopy
crystal defects
atoms
electron diffraction
selectivity
saturation
high resolution
energy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Atomic structure and formation kinetics of the Sb/Si(111)-× surface. / Park, Kang Ho; Ha, Jeong Sook; Yun, Wan Soo; Lee, El Hang; Yi, Jae Yel.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 55, No. 15, 01.01.1997, p. 9267-9270.

Research output: Contribution to journalArticle

Park, Kang Ho ; Ha, Jeong Sook ; Yun, Wan Soo ; Lee, El Hang ; Yi, Jae Yel. / Atomic structure and formation kinetics of the Sb/Si(111)-× surface. In: Physical Review B - Condensed Matter and Materials Physics. 1997 ; Vol. 55, No. 15. pp. 9267-9270.
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