Atomic structure and formation kinetics of the Sb/Si(111)-× surface

Kang Ho Park; Jeong Sook Ha; Wan Soo Yun; El Hang Lee; Jae Yel Yi

doi:10.1103/PhysRevB.55.9267

Atomic structure and formation kinetics of the Sb/Si(111)-× surface

Kang Ho Park, Jeong Sook Ha, Wan Soo Yun, El Hang Lee, Jae Yel Yi

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article

24 Citations (Scopus)

Abstract

We report on the observation of the 5(Formula presented)×5(Formula presented) atomic structure of an Sb-passivated Si(111) surface using low-energy electron diffraction and scanning tunneling microscopy (STM). A model of this structure has been derived from the analysis of high-resolution STM images. The stability of the Sb/Si(111)-5(Formula presented)×5(Formula presented) structure has been found to come from the saturation of dangling bonds and the site-selective replacement of Si atoms with Sb atoms. Strain induced by stacking faults and lattice mismatch is found to be responsible for the site selectivity in the replacement. The kinetics of formation is also discussed.

Original language	English
Pages (from-to)	9267-9270
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	55
Issue number	15
DOIs	https://doi.org/10.1103/PhysRevB.55.9267
Publication status	Published - 1997 Jan 1

Fingerprint

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Cite this

Park, K. H., Ha, J. S., Yun, W. S., Lee, E. H., & Yi, J. Y. (1997). Atomic structure and formation kinetics of the Sb/Si(111)-× surface. Physical Review B - Condensed Matter and Materials Physics, 55(15), 9267-9270. https://doi.org/10.1103/PhysRevB.55.9267

@article{a0a0b0812faa47eaa9054f63412a83fe,

title = "Atomic structure and formation kinetics of the Sb/Si(111)-× surface",

abstract = "We report on the observation of the 5(Formula presented)×5(Formula presented) atomic structure of an Sb-passivated Si(111) surface using low-energy electron diffraction and scanning tunneling microscopy (STM). A model of this structure has been derived from the analysis of high-resolution STM images. The stability of the Sb/Si(111)-5(Formula presented)×5(Formula presented) structure has been found to come from the saturation of dangling bonds and the site-selective replacement of Si atoms with Sb atoms. Strain induced by stacking faults and lattice mismatch is found to be responsible for the site selectivity in the replacement. The kinetics of formation is also discussed.",

author = "Park, {Kang Ho} and Ha, {Jeong Sook} and Yun, {Wan Soo} and Lee, {El Hang} and Yi, {Jae Yel}",

year = "1997",

month = jan

day = "1",

doi = "10.1103/PhysRevB.55.9267",

language = "English",

volume = "55",

pages = "9267--9270",

journal = "Physical Review B-Condensed Matter",

issn = "1098-0121",

publisher = "American Institute of Physics",

number = "15",

}

TY - JOUR

T1 - Atomic structure and formation kinetics of the Sb/Si(111)-× surface

AU - Park, Kang Ho

AU - Ha, Jeong Sook

AU - Yun, Wan Soo

AU - Lee, El Hang

AU - Yi, Jae Yel

PY - 1997/1/1

Y1 - 1997/1/1

N2 - We report on the observation of the 5(Formula presented)×5(Formula presented) atomic structure of an Sb-passivated Si(111) surface using low-energy electron diffraction and scanning tunneling microscopy (STM). A model of this structure has been derived from the analysis of high-resolution STM images. The stability of the Sb/Si(111)-5(Formula presented)×5(Formula presented) structure has been found to come from the saturation of dangling bonds and the site-selective replacement of Si atoms with Sb atoms. Strain induced by stacking faults and lattice mismatch is found to be responsible for the site selectivity in the replacement. The kinetics of formation is also discussed.

AB - We report on the observation of the 5(Formula presented)×5(Formula presented) atomic structure of an Sb-passivated Si(111) surface using low-energy electron diffraction and scanning tunneling microscopy (STM). A model of this structure has been derived from the analysis of high-resolution STM images. The stability of the Sb/Si(111)-5(Formula presented)×5(Formula presented) structure has been found to come from the saturation of dangling bonds and the site-selective replacement of Si atoms with Sb atoms. Strain induced by stacking faults and lattice mismatch is found to be responsible for the site selectivity in the replacement. The kinetics of formation is also discussed.

UR - http://www.scopus.com/inward/record.url?scp=0000600547&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000600547&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.55.9267

DO - 10.1103/PhysRevB.55.9267

M3 - Article

AN - SCOPUS:0000600547

VL - 55

SP - 9267

EP - 9270

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 15

ER -

Access to Document

10.1103/PhysRevB.55.9267