Atomic structure and formation kinetics of the Sb/Si(111)-× surface

Kang Ho Park; Jeong Sook Ha; Wan Soo Yun; El Hang Lee; Jae Yel Yi

doi:10.1103/PhysRevB.55.9267

Atomic structure and formation kinetics of the Sb/Si(111)-× surface

Kang Ho Park, Jeong Sook Ha, Wan Soo Yun, El Hang Lee, Jae Yel Yi

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

We report on the observation of the 5(Formula presented)×5(Formula presented) atomic structure of an Sb-passivated Si(111) surface using low-energy electron diffraction and scanning tunneling microscopy (STM). A model of this structure has been derived from the analysis of high-resolution STM images. The stability of the Sb/Si(111)-5(Formula presented)×5(Formula presented) structure has been found to come from the saturation of dangling bonds and the site-selective replacement of Si atoms with Sb atoms. Strain induced by stacking faults and lattice mismatch is found to be responsible for the site selectivity in the replacement. The kinetics of formation is also discussed.

Original language	English
Pages (from-to)	9267-9270
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	55
Issue number	15
DOIs	https://doi.org/10.1103/PhysRevB.55.9267
Publication status	Published - 1997
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "Atomic structure and formation kinetics of the Sb/Si(111)-× surface",

abstract = "We report on the observation of the 5(Formula presented)×5(Formula presented) atomic structure of an Sb-passivated Si(111) surface using low-energy electron diffraction and scanning tunneling microscopy (STM). A model of this structure has been derived from the analysis of high-resolution STM images. The stability of the Sb/Si(111)-5(Formula presented)×5(Formula presented) structure has been found to come from the saturation of dangling bonds and the site-selective replacement of Si atoms with Sb atoms. Strain induced by stacking faults and lattice mismatch is found to be responsible for the site selectivity in the replacement. The kinetics of formation is also discussed.",

author = "Park, {Kang Ho} and Ha, {Jeong Sook} and Yun, {Wan Soo} and Lee, {El Hang} and Yi, {Jae Yel}",

year = "1997",

doi = "10.1103/PhysRevB.55.9267",

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T1 - Atomic structure and formation kinetics of the Sb/Si(111)-× surface

AU - Park, Kang Ho

AU - Ha, Jeong Sook

AU - Yun, Wan Soo

AU - Lee, El Hang

AU - Yi, Jae Yel

PY - 1997

Y1 - 1997

N2 - We report on the observation of the 5(Formula presented)×5(Formula presented) atomic structure of an Sb-passivated Si(111) surface using low-energy electron diffraction and scanning tunneling microscopy (STM). A model of this structure has been derived from the analysis of high-resolution STM images. The stability of the Sb/Si(111)-5(Formula presented)×5(Formula presented) structure has been found to come from the saturation of dangling bonds and the site-selective replacement of Si atoms with Sb atoms. Strain induced by stacking faults and lattice mismatch is found to be responsible for the site selectivity in the replacement. The kinetics of formation is also discussed.

AB - We report on the observation of the 5(Formula presented)×5(Formula presented) atomic structure of an Sb-passivated Si(111) surface using low-energy electron diffraction and scanning tunneling microscopy (STM). A model of this structure has been derived from the analysis of high-resolution STM images. The stability of the Sb/Si(111)-5(Formula presented)×5(Formula presented) structure has been found to come from the saturation of dangling bonds and the site-selective replacement of Si atoms with Sb atoms. Strain induced by stacking faults and lattice mismatch is found to be responsible for the site selectivity in the replacement. The kinetics of formation is also discussed.

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Atomic structure and formation kinetics of the Sb/Si(111)-× surface

Abstract

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