Atomic structure and formation kinetics of the Sb/Si(111)-× surface

Engineering & Materials Science

• Scanning tunneling microscopy 100%
• Low energy electron diffraction 62%
• Atoms 58%
• Dangling bonds 51%
• Lattice mismatch 50%
• Stacking faults 40%

Chemical Compounds

• Scanning Tunneling Microscopy 57%
• Stacking Fault 38%
• Dangling Bond 37%
• Low Energy Electron Diffraction 36%
• Strain 19%
• Surface 17%

Physics & Astronomy

• atomic structure 56%
• kinetics 33%
• scanning tunneling microscopy 27%
• atoms 14%
• crystal defects 13%
• selectivity 13%
• electron diffraction 11%
• saturation 9%
• high resolution 8%
• energy 4%