Atomic structure of Ga and As atoms on GaAs(110)

Jae Yel Yi, Ja Yong Koo, Sekyung Lee, Jeong Sook Ha, El Hang Lee

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3 Citations (Scopus)

Abstract

Atomic structures of Ga and As atoms on GaAs(110) were examined employing a first-principles pseudopotential method. Both Ga and As atoms reside in the center of a triangle consisting of a surface Ga and two surface As atoms in the single-atom chemisorbed state. Adsorption energies for Ga and As atoms are 3.1 and 3.5 eV, respectively. Energy barrier heights of Ga and As atoms for the migration along the path through the interstitial channel were found to be 0.6 and 1.0 eV, respectively. Simulations on the deposition of two atoms reveal that a pair formation is stable against separate single-atom chemisorptions.

Original languageEnglish
Pages (from-to)10733-10736
Number of pages4
JournalPhysical Review B
Volume52
Issue number15
DOIs
Publication statusPublished - 1995

ASJC Scopus subject areas

  • Condensed Matter Physics

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    Yi, J. Y., Koo, J. Y., Lee, S., Ha, J. S., & Lee, E. H. (1995). Atomic structure of Ga and As atoms on GaAs(110). Physical Review B, 52(15), 10733-10736. https://doi.org/10.1103/PhysRevB.52.10733