Atomic structure of Ga and As atoms on GaAs(110)

Jae Yel Yi, Ja Yong Koo, Sekyung Lee, Jeong Sook Ha, El Hang Lee

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Atomic structures of Ga and As atoms on GaAs(110) were examined employing a first-principles pseudopotential method. Both Ga and As atoms reside in the center of a triangle consisting of a surface Ga and two surface As atoms in the single-atom chemisorbed state. Adsorption energies for Ga and As atoms are 3.1 and 3.5 eV, respectively. Energy barrier heights of Ga and As atoms for the migration along the path through the interstitial channel were found to be 0.6 and 1.0 eV, respectively. Simulations on the deposition of two atoms reveal that a pair formation is stable against separate single-atom chemisorptions.

Original languageEnglish
Pages (from-to)10733-10736
Number of pages4
JournalPhysical Review B
Volume52
Issue number15
DOIs
Publication statusPublished - 1995 Dec 1
Externally publishedYes

Fingerprint

atomic structure
Atoms
atoms
gallium arsenide
Energy barriers
Chemisorption
triangles
chemisorption
pseudopotentials
interstitials
Adsorption
adsorption
energy
simulation

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Yi, J. Y., Koo, J. Y., Lee, S., Ha, J. S., & Lee, E. H. (1995). Atomic structure of Ga and As atoms on GaAs(110). Physical Review B, 52(15), 10733-10736. https://doi.org/10.1103/PhysRevB.52.10733

Atomic structure of Ga and As atoms on GaAs(110). / Yi, Jae Yel; Koo, Ja Yong; Lee, Sekyung; Ha, Jeong Sook; Lee, El Hang.

In: Physical Review B, Vol. 52, No. 15, 01.12.1995, p. 10733-10736.

Research output: Contribution to journalArticle

Yi, JY, Koo, JY, Lee, S, Ha, JS & Lee, EH 1995, 'Atomic structure of Ga and As atoms on GaAs(110)', Physical Review B, vol. 52, no. 15, pp. 10733-10736. https://doi.org/10.1103/PhysRevB.52.10733
Yi, Jae Yel ; Koo, Ja Yong ; Lee, Sekyung ; Ha, Jeong Sook ; Lee, El Hang. / Atomic structure of Ga and As atoms on GaAs(110). In: Physical Review B. 1995 ; Vol. 52, No. 15. pp. 10733-10736.
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