Abstract
We investigated 5√3 × 5√3 atomic structure of an Sb-passivated Si(111) surface using low energy electron diffraction (LEED) and scanning tunneling Microscope (STM). This interesting structure with large unit cell has been analyzed with high resolution STM images in detail. The proper structural model is suggested in order to describe the STM image and other experimental results. They are understood within the frame of Si(111)-5×5 DAS (dimer adatom stacking fault) structure having the site-selective replacement of Si atoms with Sb atoms.
| Original language | English |
|---|---|
| Journal | Journal of the Korean Physical Society |
| Volume | 31 |
| Issue number | SUPPL. PART 1 |
| Publication status | Published - 1997 Dec 1 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Atomic structure of Sb/Si(111)-5√3 × 5√3 surface. / Park, Kang Ho; Ha, Jeong Sook; Yun, Wan Soo; Lee, El Hang; Yi, Jae Yel; Park, Seong Ju.
In: Journal of the Korean Physical Society, Vol. 31, No. SUPPL. PART 1, 01.12.1997.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Atomic structure of Sb/Si(111)-5√3 × 5√3 surface
AU - Park, Kang Ho
AU - Ha, Jeong Sook
AU - Yun, Wan Soo
AU - Lee, El Hang
AU - Yi, Jae Yel
AU - Park, Seong Ju
PY - 1997/12/1
Y1 - 1997/12/1
N2 - We investigated 5√3 × 5√3 atomic structure of an Sb-passivated Si(111) surface using low energy electron diffraction (LEED) and scanning tunneling Microscope (STM). This interesting structure with large unit cell has been analyzed with high resolution STM images in detail. The proper structural model is suggested in order to describe the STM image and other experimental results. They are understood within the frame of Si(111)-5×5 DAS (dimer adatom stacking fault) structure having the site-selective replacement of Si atoms with Sb atoms.
AB - We investigated 5√3 × 5√3 atomic structure of an Sb-passivated Si(111) surface using low energy electron diffraction (LEED) and scanning tunneling Microscope (STM). This interesting structure with large unit cell has been analyzed with high resolution STM images in detail. The proper structural model is suggested in order to describe the STM image and other experimental results. They are understood within the frame of Si(111)-5×5 DAS (dimer adatom stacking fault) structure having the site-selective replacement of Si atoms with Sb atoms.
UR - http://www.scopus.com/inward/record.url?scp=18844402600&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=18844402600&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:18844402600
VL - 31
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
SN - 0374-4884
IS - SUPPL. PART 1
ER -