Abstract
We investigated 5√3 × 5√3 atomic structure of an Sb-passivated Si(111) surface using low energy electron diffraction (LEED) and scanning tunneling Microscope (STM). This interesting structure with large unit cell has been analyzed with high resolution STM images in detail. The proper structural model is suggested in order to describe the STM image and other experimental results. They are understood within the frame of Si(111)-5×5 DAS (dimer adatom stacking fault) structure having the site-selective replacement of Si atoms with Sb atoms.
| Original language | English |
|---|---|
| Pages (from-to) | S35-S38 |
| Journal | Journal of the Korean Physical Society |
| Volume | 31 |
| Issue number | SUPPL. PART 1 |
| Publication status | Published - 1997 |
| Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)
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Park, K. H., Ha, J. S., Yun, W. S., Lee, E. H., Yi, J. Y., & Park, S. J. (1997). Atomic structure of Sb/Si(111)-5√3 × 5√3 surface. Journal of the Korean Physical Society, 31(SUPPL. PART 1), S35-S38.