Atomic structure of Sb/Si(111)-5√3 × 5√3 surface

Kang Ho Park, Jeong Sook Ha, Wan Soo Yun, El Hang Lee, Jae Yel Yi, Seong Ju Park

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1 Citation (Scopus)

Abstract

We investigated 5√3 × 5√3 atomic structure of an Sb-passivated Si(111) surface using low energy electron diffraction (LEED) and scanning tunneling Microscope (STM). This interesting structure with large unit cell has been analyzed with high resolution STM images in detail. The proper structural model is suggested in order to describe the STM image and other experimental results. They are understood within the frame of Si(111)-5×5 DAS (dimer adatom stacking fault) structure having the site-selective replacement of Si atoms with Sb atoms.

Original languageEnglish
Pages (from-to)S35-S38
JournalJournal of the Korean Physical Society
Volume31
Issue numberSUPPL. PART 1
Publication statusPublished - 1997
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Park, K. H., Ha, J. S., Yun, W. S., Lee, E. H., Yi, J. Y., & Park, S. J. (1997). Atomic structure of Sb/Si(111)-5√3 × 5√3 surface. Journal of the Korean Physical Society, 31(SUPPL. PART 1), S35-S38.