Atomic structure of the Sb-induced Si(111)-(5√3×5√3)R30° surface: Ab initio calculations

Young Jo Ko, Kang Ho Park, Jeong Sook Ha, Wan Soo Yun

Research output: Contribution to journalArticle

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Abstract

We present ab initio calculations on the atomic structure of the Sb-induced Si(111)-(5√3×5√3)R30° surface. The scanning tunneling microscopy images of Si and Sb adatom structures are calculated and compared with recent experimental results. We demonstrate that the majority adatoms observed in the (5√3 ×5√3)R30° structure are Sb atoms, supporting the recently proposed atomic model [Park et al., Phys. Rev. B 55, 9267 (1997)]. The origin of bias voltage-dependent scanning tunneling microscopy images is discussed.

Original languageEnglish
Pages (from-to)4588-4591
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume59
Issue number7
Publication statusPublished - 1999 Dec 1
Externally publishedYes

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Adatoms
Scanning tunneling microscopy
atomic structure
adatoms
scanning tunneling microscopy
Bias voltage
Atoms
electric potential
atoms

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Atomic structure of the Sb-induced Si(111)-(5√3×5√3)R30° surface : Ab initio calculations. / Ko, Young Jo; Park, Kang Ho; Ha, Jeong Sook; Yun, Wan Soo.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 59, No. 7, 01.12.1999, p. 4588-4591.

Research output: Contribution to journalArticle

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