We present ab initio calculations on the atomic structure of the Sb-induced Si(111)-(5√3×5√3)R30° surface. The scanning tunneling microscopy images of Si and Sb adatom structures are calculated and compared with recent experimental results. We demonstrate that the majority adatoms observed in the (5√3 ×5√3)R30° structure are Sb atoms, supporting the recently proposed atomic model [Park et al., Phys. Rev. B 55, 9267 (1997)]. The origin of bias voltage-dependent scanning tunneling microscopy images is discussed.
|Number of pages||4|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 1999 Dec 1|
ASJC Scopus subject areas
- Condensed Matter Physics