The adsorption and growth of Ge on monohydride the (Formula presented) surface was studied with scanning tunneling microscopy. We observed that Ge monomers are stable at three adsorption sites and that the diffusivity of Ge adatom is reduced relative to on the bare surface, as suggested by the recent first-principle calculation. With the surfactant effect of hydrogen, we were able to grow flat Ge overlayers by preventing the growth of hut cluster beyond the known critical thickness. The etching effect of hydrogen on the Ge overlayer was observed.
|Number of pages||5|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 1999 Jan 1|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics