Atomic view of Ge on the monohydride Si(001)-(2×1) surface

Se-Jong Kahng, J. Y. Park, Y. Kuk

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The adsorption and growth of Ge on monohydride the Si(001)-(2×1) surface was studied with scanning tunneling microscopy. We observed that Ge monomers are stable at three adsorption sites and that the diffusivity of Ge adatom is reduced relative to on the bare surface, as suggested by the recent first-principle calculation. With the surfactant effect of hydrogen, we were able to grow flat Ge overlayers by preventing the growth of hut cluster beyond the known critical thickness. The etching effect of hydrogen on the Ge overlayer was observed.

Original languageEnglish
Pages (from-to)16558-16562
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume60
Issue number24
Publication statusPublished - 1999 Dec 15
Externally publishedYes

Fingerprint

Hydrogen
Adsorption
adsorption
Adatoms
Scanning tunneling microscopy
hydrogen
Surface-Active Agents
adatoms
diffusivity
scanning tunneling microscopy
Etching
Surface active agents
monomers
Monomers
surfactants
etching

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Atomic view of Ge on the monohydride Si(001)-(2×1) surface. / Kahng, Se-Jong; Park, J. Y.; Kuk, Y.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 60, No. 24, 15.12.1999, p. 16558-16562.

Research output: Contribution to journalArticle

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