Abstract
Semiconductor p-n junctions are essential building blocks for electronic and optoelectronic devices. In conventional p-n junctions, regions depleted of free charge carriers form on either side of the junction, generating built-in potentials associated with uncompensated dopant atoms. Carrier transport across the junction occurs by diffusion and drift processes influenced by the spatial extent of this depletion region. With the advent of atomically thin van der Waals materials and their heterostructures, it is now possible to realize a p-n junction at the ultimate thickness limit. Van der Waals junctions composed of p- and n-type semiconductors-each just one unit cell thick-are predicted to exhibit completely different charge transport characteristics than bulk heterojunctions. Here, we report the characterization of the electronic and optoelectronic properties of atomically thin p-n heterojunctions fabricated using van der Waals assembly of transition-metal dichalcogenides. We observe gate-tunable diode-like current rectification and a photovoltaic response across the p-n interface. We find that the tunnelling-assisted interlayer recombination of the majority carriers is responsible for the tunability of the electronic and optoelectronic processes. Sandwiching an atomic p-n junction between graphene layers enhances the collection of the photoexcited carriers. The atomically scaled van der Waals p-n heterostructures presented here constitute the ultimate functional unit for nanoscale electronic and optoelectronic devices.
| Original language | English |
|---|---|
| Pages (from-to) | 676-681 |
| Number of pages | 6 |
| Journal | Nature Nanotechnology |
| Volume | 9 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2014 |
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ASJC Scopus subject areas
- Bioengineering
- Biomedical Engineering
- Materials Science(all)
- Electrical and Electronic Engineering
- Condensed Matter Physics
- Atomic and Molecular Physics, and Optics
Cite this
Atomically thin p-n junctions with van der Waals heterointerfaces. / Lee, Chul-Ho; Lee, Gwan Hyoung; Van Der Zande, Arend M.; Chen, Wenchao; Li, Yilei; Han, Minyong; Cui, Xu; Arefe, Ghidewon; Nuckolls, Colin; Heinz, Tony F.; Guo, Jing; Hone, James; Kim, Philip.
In: Nature Nanotechnology, Vol. 9, No. 9, 2014, p. 676-681.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Atomically thin p-n junctions with van der Waals heterointerfaces
AU - Lee, Chul-Ho
AU - Lee, Gwan Hyoung
AU - Van Der Zande, Arend M.
AU - Chen, Wenchao
AU - Li, Yilei
AU - Han, Minyong
AU - Cui, Xu
AU - Arefe, Ghidewon
AU - Nuckolls, Colin
AU - Heinz, Tony F.
AU - Guo, Jing
AU - Hone, James
AU - Kim, Philip
PY - 2014
Y1 - 2014
N2 - Semiconductor p-n junctions are essential building blocks for electronic and optoelectronic devices. In conventional p-n junctions, regions depleted of free charge carriers form on either side of the junction, generating built-in potentials associated with uncompensated dopant atoms. Carrier transport across the junction occurs by diffusion and drift processes influenced by the spatial extent of this depletion region. With the advent of atomically thin van der Waals materials and their heterostructures, it is now possible to realize a p-n junction at the ultimate thickness limit. Van der Waals junctions composed of p- and n-type semiconductors-each just one unit cell thick-are predicted to exhibit completely different charge transport characteristics than bulk heterojunctions. Here, we report the characterization of the electronic and optoelectronic properties of atomically thin p-n heterojunctions fabricated using van der Waals assembly of transition-metal dichalcogenides. We observe gate-tunable diode-like current rectification and a photovoltaic response across the p-n interface. We find that the tunnelling-assisted interlayer recombination of the majority carriers is responsible for the tunability of the electronic and optoelectronic processes. Sandwiching an atomic p-n junction between graphene layers enhances the collection of the photoexcited carriers. The atomically scaled van der Waals p-n heterostructures presented here constitute the ultimate functional unit for nanoscale electronic and optoelectronic devices.
AB - Semiconductor p-n junctions are essential building blocks for electronic and optoelectronic devices. In conventional p-n junctions, regions depleted of free charge carriers form on either side of the junction, generating built-in potentials associated with uncompensated dopant atoms. Carrier transport across the junction occurs by diffusion and drift processes influenced by the spatial extent of this depletion region. With the advent of atomically thin van der Waals materials and their heterostructures, it is now possible to realize a p-n junction at the ultimate thickness limit. Van der Waals junctions composed of p- and n-type semiconductors-each just one unit cell thick-are predicted to exhibit completely different charge transport characteristics than bulk heterojunctions. Here, we report the characterization of the electronic and optoelectronic properties of atomically thin p-n heterojunctions fabricated using van der Waals assembly of transition-metal dichalcogenides. We observe gate-tunable diode-like current rectification and a photovoltaic response across the p-n interface. We find that the tunnelling-assisted interlayer recombination of the majority carriers is responsible for the tunability of the electronic and optoelectronic processes. Sandwiching an atomic p-n junction between graphene layers enhances the collection of the photoexcited carriers. The atomically scaled van der Waals p-n heterostructures presented here constitute the ultimate functional unit for nanoscale electronic and optoelectronic devices.
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U2 - 10.1038/nnano.2014.150
DO - 10.1038/nnano.2014.150
M3 - Article
AN - SCOPUS:84926231397
VL - 9
SP - 676
EP - 681
JO - Nature Nanotechnology
JF - Nature Nanotechnology
SN - 1748-3387
IS - 9
ER -