Atomistic simulation of dislocation interactions with a Σ = 5 (210) grain boundary during nanoindentation of Ni

Ho Jang, Diana Farkas

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)

Fingerprint Dive into the research topics of 'Atomistic simulation of dislocation interactions with a Σ = 5 (210) grain boundary during nanoindentation of Ni'. Together they form a unique fingerprint.

Physics & Astronomy

Chemical Compounds

Engineering & Materials Science