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Atomistic simulation of dislocation interactions with a Σ = 5 (210) grain boundary during nanoindentation of Ni
Ho Jang
, Diana Farkas
Department of Materials Science and Engineering
Research output
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Contribution to journal
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Conference article
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peer-review
3
Citations (Scopus)
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Dive into the research topics of 'Atomistic simulation of dislocation interactions with a Σ = 5 (210) grain boundary during nanoindentation of Ni'. Together they form a unique fingerprint.
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Engineering & Materials Science
Nanoindentation
93%
Grain boundaries
78%
Indentation
27%
Atoms
26%
Molecular dynamics
14%
Diamonds
12%
Substrates
9%
Computer simulation
7%
Chemical Compounds
Atomistic Simulation
100%
Grain Boundary
80%
Dislocation Loop
23%
Molecular Dynamics
9%
Simulation
8%
Physics & Astronomy
grain boundaries
57%
interactions
30%
simulation
29%
indentation
25%
atoms
13%
slip
10%
diamonds
10%
retarding
9%
molecular dynamics
9%
configurations
6%