AuCl3 chemical doping on defective graphene layer

Sooyeoun Oh, Gwangseok Yang, Ji Hyun Kim

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

This study investigated the effects of defects on chemical doping of graphene layer. Graphene grown by the chemical vapor deposition method on copper foil was subjected to ultraviolet treatments to introduce defects, including sp3 bonding and vacancies. The chemical doping process was performed using a gold chloride (AuCl3)/nitromethane solution at a concentration of 20mM. Raman spectroscopy and four-point probe measurement were used to analyze the effects of AuCl3 doping on the electrical and optical properties of defective graphene. AuCl3 doping was effective for lowering sheet resistance even for the highly damaged graphene. Additionally, the 2D-peak of the defective graphene was partially recovered after AuCl3-based chemical doping. The authors believe that the defect engineering in graphene can enhance the electrical properties and the long-term stability of chemical doping.

Original languageEnglish
Article number021502
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume33
Issue number2
DOIs
Publication statusPublished - 2015 Mar 1

Fingerprint

Graphite
Graphene
graphene
Doping (additives)
Defects
defects
Electric properties
electrical properties
nitromethane
Sheet resistance
Metal foil
Vacancies
Raman spectroscopy
Copper
Chemical vapor deposition
foils
Optical properties
Gold
chlorides
vapor deposition

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

AuCl3 chemical doping on defective graphene layer. / Oh, Sooyeoun; Yang, Gwangseok; Kim, Ji Hyun.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 33, No. 2, 021502, 01.03.2015.

Research output: Contribution to journalArticle

@article{7259bcebf2d54423a471b45ec8e2cf5c,
title = "AuCl3 chemical doping on defective graphene layer",
abstract = "This study investigated the effects of defects on chemical doping of graphene layer. Graphene grown by the chemical vapor deposition method on copper foil was subjected to ultraviolet treatments to introduce defects, including sp3 bonding and vacancies. The chemical doping process was performed using a gold chloride (AuCl3)/nitromethane solution at a concentration of 20mM. Raman spectroscopy and four-point probe measurement were used to analyze the effects of AuCl3 doping on the electrical and optical properties of defective graphene. AuCl3 doping was effective for lowering sheet resistance even for the highly damaged graphene. Additionally, the 2D-peak of the defective graphene was partially recovered after AuCl3-based chemical doping. The authors believe that the defect engineering in graphene can enhance the electrical properties and the long-term stability of chemical doping.",
author = "Sooyeoun Oh and Gwangseok Yang and Kim, {Ji Hyun}",
year = "2015",
month = "3",
day = "1",
doi = "10.1116/1.4902968",
language = "English",
volume = "33",
journal = "Journal of Vacuum Science and Technology A",
issn = "0734-2101",
publisher = "AVS Science and Technology Society",
number = "2",

}

TY - JOUR

T1 - AuCl3 chemical doping on defective graphene layer

AU - Oh, Sooyeoun

AU - Yang, Gwangseok

AU - Kim, Ji Hyun

PY - 2015/3/1

Y1 - 2015/3/1

N2 - This study investigated the effects of defects on chemical doping of graphene layer. Graphene grown by the chemical vapor deposition method on copper foil was subjected to ultraviolet treatments to introduce defects, including sp3 bonding and vacancies. The chemical doping process was performed using a gold chloride (AuCl3)/nitromethane solution at a concentration of 20mM. Raman spectroscopy and four-point probe measurement were used to analyze the effects of AuCl3 doping on the electrical and optical properties of defective graphene. AuCl3 doping was effective for lowering sheet resistance even for the highly damaged graphene. Additionally, the 2D-peak of the defective graphene was partially recovered after AuCl3-based chemical doping. The authors believe that the defect engineering in graphene can enhance the electrical properties and the long-term stability of chemical doping.

AB - This study investigated the effects of defects on chemical doping of graphene layer. Graphene grown by the chemical vapor deposition method on copper foil was subjected to ultraviolet treatments to introduce defects, including sp3 bonding and vacancies. The chemical doping process was performed using a gold chloride (AuCl3)/nitromethane solution at a concentration of 20mM. Raman spectroscopy and four-point probe measurement were used to analyze the effects of AuCl3 doping on the electrical and optical properties of defective graphene. AuCl3 doping was effective for lowering sheet resistance even for the highly damaged graphene. Additionally, the 2D-peak of the defective graphene was partially recovered after AuCl3-based chemical doping. The authors believe that the defect engineering in graphene can enhance the electrical properties and the long-term stability of chemical doping.

UR - http://www.scopus.com/inward/record.url?scp=84914141901&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84914141901&partnerID=8YFLogxK

U2 - 10.1116/1.4902968

DO - 10.1116/1.4902968

M3 - Article

AN - SCOPUS:84914141901

VL - 33

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

SN - 0734-2101

IS - 2

M1 - 021502

ER -