Back surface field properties with different surface conditions for crystalline silicon solar cells

Hyunho Kim, Seongtak Kim, Sungeun Park, Jooyong Song, Young Do Kim, Sung Ju Tark, Soonwoo Kwon, Sewang Yoon, Chang Sik Son, Donghwan Kim

Research output: Contribution to journalArticle

Abstract

To reduce manufacturing costs of crystalline silicon solar cells, silicon wafers have become thinner. In relation to this, the properties of the aluminium-back surface field (Al-BSF) are considered an important factor in solar cell performance. Generally, screen-printing and a rapid thermal process (RTP) are utilized together to form the Al-BSF. This study evaluates Al-BSF formation on a (111) textured back surface compared with a (100) flat back surface with variation of ramp up rates from 18 to 89°C/s for the RTP annealing conditions. To make different back surface morphologies, one side texturing using a silicon nitride film and double side texturing were carried out. After aluminium screen-printing, Al-BSF formed according to the RTP annealing conditions. A metal etching process in hydrochloric acid solution was carried out to assess the quality of Al-BSF. Saturation currents were calculated by using quasi-steady-state photoconductance. The surface morphologies observed by scanning electron microscopy and a non-contacting optical profiler. Also, sheet resistances and bulk carrier concentration were measured by a 4-point probe and hall measurement system. From the results, a faster ramp up during Al-BSF formation yielded better quality than a slower ramp up process due to temperature uniformity of silicon and the aluminium surface. Also, in the Al-BSF formation process, the (111) textured back surface is significantly affected by the ramp up rates compared with the (100) flat back surface.

Original languageEnglish
Pages (from-to)243-249
Number of pages7
JournalKorean Journal of Materials Research
Volume21
Issue number5
DOIs
Publication statusPublished - 2011 Jul 25

Fingerprint

Silicon solar cells
Aluminum
Crystalline materials
Screen printing
Texturing
Surface morphology
Annealing
Hydrochloric Acid
Sheet resistance
Silicon
Hydrochloric acid
Silicon nitride
Silicon wafers
Carrier concentration
Etching
Solar cells
Metals

Keywords

  • Back surface field (BSF)
  • Flat back surface
  • Ramp up rates
  • Silicon solar cells
  • Textured back surface

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Back surface field properties with different surface conditions for crystalline silicon solar cells. / Kim, Hyunho; Kim, Seongtak; Park, Sungeun; Song, Jooyong; Kim, Young Do; Tark, Sung Ju; Kwon, Soonwoo; Yoon, Sewang; Son, Chang Sik; Kim, Donghwan.

In: Korean Journal of Materials Research, Vol. 21, No. 5, 25.07.2011, p. 243-249.

Research output: Contribution to journalArticle

Kim, Hyunho ; Kim, Seongtak ; Park, Sungeun ; Song, Jooyong ; Kim, Young Do ; Tark, Sung Ju ; Kwon, Soonwoo ; Yoon, Sewang ; Son, Chang Sik ; Kim, Donghwan. / Back surface field properties with different surface conditions for crystalline silicon solar cells. In: Korean Journal of Materials Research. 2011 ; Vol. 21, No. 5. pp. 243-249.
@article{40726bd863764eeb9bde7853b35635b6,
title = "Back surface field properties with different surface conditions for crystalline silicon solar cells",
abstract = "To reduce manufacturing costs of crystalline silicon solar cells, silicon wafers have become thinner. In relation to this, the properties of the aluminium-back surface field (Al-BSF) are considered an important factor in solar cell performance. Generally, screen-printing and a rapid thermal process (RTP) are utilized together to form the Al-BSF. This study evaluates Al-BSF formation on a (111) textured back surface compared with a (100) flat back surface with variation of ramp up rates from 18 to 89°C/s for the RTP annealing conditions. To make different back surface morphologies, one side texturing using a silicon nitride film and double side texturing were carried out. After aluminium screen-printing, Al-BSF formed according to the RTP annealing conditions. A metal etching process in hydrochloric acid solution was carried out to assess the quality of Al-BSF. Saturation currents were calculated by using quasi-steady-state photoconductance. The surface morphologies observed by scanning electron microscopy and a non-contacting optical profiler. Also, sheet resistances and bulk carrier concentration were measured by a 4-point probe and hall measurement system. From the results, a faster ramp up during Al-BSF formation yielded better quality than a slower ramp up process due to temperature uniformity of silicon and the aluminium surface. Also, in the Al-BSF formation process, the (111) textured back surface is significantly affected by the ramp up rates compared with the (100) flat back surface.",
keywords = "Back surface field (BSF), Flat back surface, Ramp up rates, Silicon solar cells, Textured back surface",
author = "Hyunho Kim and Seongtak Kim and Sungeun Park and Jooyong Song and Kim, {Young Do} and Tark, {Sung Ju} and Soonwoo Kwon and Sewang Yoon and Son, {Chang Sik} and Donghwan Kim",
year = "2011",
month = "7",
day = "25",
doi = "10.3740/MRSK.2011.21.5.243",
language = "English",
volume = "21",
pages = "243--249",
journal = "Korean Journal of Materials Research",
issn = "1225-0562",
publisher = "The Korea Federation of Science and Technology",
number = "5",

}

TY - JOUR

T1 - Back surface field properties with different surface conditions for crystalline silicon solar cells

AU - Kim, Hyunho

AU - Kim, Seongtak

AU - Park, Sungeun

AU - Song, Jooyong

AU - Kim, Young Do

AU - Tark, Sung Ju

AU - Kwon, Soonwoo

AU - Yoon, Sewang

AU - Son, Chang Sik

AU - Kim, Donghwan

PY - 2011/7/25

Y1 - 2011/7/25

N2 - To reduce manufacturing costs of crystalline silicon solar cells, silicon wafers have become thinner. In relation to this, the properties of the aluminium-back surface field (Al-BSF) are considered an important factor in solar cell performance. Generally, screen-printing and a rapid thermal process (RTP) are utilized together to form the Al-BSF. This study evaluates Al-BSF formation on a (111) textured back surface compared with a (100) flat back surface with variation of ramp up rates from 18 to 89°C/s for the RTP annealing conditions. To make different back surface morphologies, one side texturing using a silicon nitride film and double side texturing were carried out. After aluminium screen-printing, Al-BSF formed according to the RTP annealing conditions. A metal etching process in hydrochloric acid solution was carried out to assess the quality of Al-BSF. Saturation currents were calculated by using quasi-steady-state photoconductance. The surface morphologies observed by scanning electron microscopy and a non-contacting optical profiler. Also, sheet resistances and bulk carrier concentration were measured by a 4-point probe and hall measurement system. From the results, a faster ramp up during Al-BSF formation yielded better quality than a slower ramp up process due to temperature uniformity of silicon and the aluminium surface. Also, in the Al-BSF formation process, the (111) textured back surface is significantly affected by the ramp up rates compared with the (100) flat back surface.

AB - To reduce manufacturing costs of crystalline silicon solar cells, silicon wafers have become thinner. In relation to this, the properties of the aluminium-back surface field (Al-BSF) are considered an important factor in solar cell performance. Generally, screen-printing and a rapid thermal process (RTP) are utilized together to form the Al-BSF. This study evaluates Al-BSF formation on a (111) textured back surface compared with a (100) flat back surface with variation of ramp up rates from 18 to 89°C/s for the RTP annealing conditions. To make different back surface morphologies, one side texturing using a silicon nitride film and double side texturing were carried out. After aluminium screen-printing, Al-BSF formed according to the RTP annealing conditions. A metal etching process in hydrochloric acid solution was carried out to assess the quality of Al-BSF. Saturation currents were calculated by using quasi-steady-state photoconductance. The surface morphologies observed by scanning electron microscopy and a non-contacting optical profiler. Also, sheet resistances and bulk carrier concentration were measured by a 4-point probe and hall measurement system. From the results, a faster ramp up during Al-BSF formation yielded better quality than a slower ramp up process due to temperature uniformity of silicon and the aluminium surface. Also, in the Al-BSF formation process, the (111) textured back surface is significantly affected by the ramp up rates compared with the (100) flat back surface.

KW - Back surface field (BSF)

KW - Flat back surface

KW - Ramp up rates

KW - Silicon solar cells

KW - Textured back surface

UR - http://www.scopus.com/inward/record.url?scp=79960548803&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79960548803&partnerID=8YFLogxK

U2 - 10.3740/MRSK.2011.21.5.243

DO - 10.3740/MRSK.2011.21.5.243

M3 - Article

VL - 21

SP - 243

EP - 249

JO - Korean Journal of Materials Research

JF - Korean Journal of Materials Research

SN - 1225-0562

IS - 5

ER -