Abstract
To reduce manufacturing costs of crystalline silicon solar cells, silicon wafers have become thinner. In relation to this, the properties of the aluminium-back surface field (Al-BSF) are considered an important factor in solar cell performance. Generally, screen-printing and a rapid thermal process (RTP) are utilized together to form the Al-BSF. This study evaluates Al-BSF formation on a (111) textured back surface compared with a (100) flat back surface with variation of ramp up rates from 18 to 89°C/s for the RTP annealing conditions. To make different back surface morphologies, one side texturing using a silicon nitride film and double side texturing were carried out. After aluminium screen-printing, Al-BSF formed according to the RTP annealing conditions. A metal etching process in hydrochloric acid solution was carried out to assess the quality of Al-BSF. Saturation currents were calculated by using quasi-steady-state photoconductance. The surface morphologies observed by scanning electron microscopy and a non-contacting optical profiler. Also, sheet resistances and bulk carrier concentration were measured by a 4-point probe and hall measurement system. From the results, a faster ramp up during Al-BSF formation yielded better quality than a slower ramp up process due to temperature uniformity of silicon and the aluminium surface. Also, in the Al-BSF formation process, the (111) textured back surface is significantly affected by the ramp up rates compared with the (100) flat back surface.
| Original language | English |
|---|---|
| Pages (from-to) | 243-249 |
| Number of pages | 7 |
| Journal | Korean Journal of Materials Research |
| Volume | 21 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2011 Jul 25 |
Fingerprint
Keywords
- Back surface field (BSF)
- Flat back surface
- Ramp up rates
- Silicon solar cells
- Textured back surface
ASJC Scopus subject areas
- Materials Science(all)
Cite this
Back surface field properties with different surface conditions for crystalline silicon solar cells. / Kim, Hyunho; Kim, Seongtak; Park, Sungeun; Song, Jooyong; Kim, Young Do; Tark, Sung Ju; Kwon, Soonwoo; Yoon, Sewang; Son, Chang Sik; Kim, Donghwan.
In: Korean Journal of Materials Research, Vol. 21, No. 5, 25.07.2011, p. 243-249.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Back surface field properties with different surface conditions for crystalline silicon solar cells
AU - Kim, Hyunho
AU - Kim, Seongtak
AU - Park, Sungeun
AU - Song, Jooyong
AU - Kim, Young Do
AU - Tark, Sung Ju
AU - Kwon, Soonwoo
AU - Yoon, Sewang
AU - Son, Chang Sik
AU - Kim, Donghwan
PY - 2011/7/25
Y1 - 2011/7/25
N2 - To reduce manufacturing costs of crystalline silicon solar cells, silicon wafers have become thinner. In relation to this, the properties of the aluminium-back surface field (Al-BSF) are considered an important factor in solar cell performance. Generally, screen-printing and a rapid thermal process (RTP) are utilized together to form the Al-BSF. This study evaluates Al-BSF formation on a (111) textured back surface compared with a (100) flat back surface with variation of ramp up rates from 18 to 89°C/s for the RTP annealing conditions. To make different back surface morphologies, one side texturing using a silicon nitride film and double side texturing were carried out. After aluminium screen-printing, Al-BSF formed according to the RTP annealing conditions. A metal etching process in hydrochloric acid solution was carried out to assess the quality of Al-BSF. Saturation currents were calculated by using quasi-steady-state photoconductance. The surface morphologies observed by scanning electron microscopy and a non-contacting optical profiler. Also, sheet resistances and bulk carrier concentration were measured by a 4-point probe and hall measurement system. From the results, a faster ramp up during Al-BSF formation yielded better quality than a slower ramp up process due to temperature uniformity of silicon and the aluminium surface. Also, in the Al-BSF formation process, the (111) textured back surface is significantly affected by the ramp up rates compared with the (100) flat back surface.
AB - To reduce manufacturing costs of crystalline silicon solar cells, silicon wafers have become thinner. In relation to this, the properties of the aluminium-back surface field (Al-BSF) are considered an important factor in solar cell performance. Generally, screen-printing and a rapid thermal process (RTP) are utilized together to form the Al-BSF. This study evaluates Al-BSF formation on a (111) textured back surface compared with a (100) flat back surface with variation of ramp up rates from 18 to 89°C/s for the RTP annealing conditions. To make different back surface morphologies, one side texturing using a silicon nitride film and double side texturing were carried out. After aluminium screen-printing, Al-BSF formed according to the RTP annealing conditions. A metal etching process in hydrochloric acid solution was carried out to assess the quality of Al-BSF. Saturation currents were calculated by using quasi-steady-state photoconductance. The surface morphologies observed by scanning electron microscopy and a non-contacting optical profiler. Also, sheet resistances and bulk carrier concentration were measured by a 4-point probe and hall measurement system. From the results, a faster ramp up during Al-BSF formation yielded better quality than a slower ramp up process due to temperature uniformity of silicon and the aluminium surface. Also, in the Al-BSF formation process, the (111) textured back surface is significantly affected by the ramp up rates compared with the (100) flat back surface.
KW - Back surface field (BSF)
KW - Flat back surface
KW - Ramp up rates
KW - Silicon solar cells
KW - Textured back surface
UR - http://www.scopus.com/inward/record.url?scp=79960548803&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79960548803&partnerID=8YFLogxK
U2 - 10.3740/MRSK.2011.21.5.243
DO - 10.3740/MRSK.2011.21.5.243
M3 - Article
VL - 21
SP - 243
EP - 249
JO - Korean Journal of Materials Research
JF - Korean Journal of Materials Research
SN - 1225-0562
IS - 5
ER -