Band-gap narrowing and potential fluctuation in Si-doped GaN

In-Hwan Lee, J. J. Lee, P. Kung, F. J. Sanchez, M. Razeghi

Research output: Contribution to journalArticle

80 Citations (Scopus)

Abstract

We investigate the optical properties of two sets of Si-doped GaN epitaxial layers with different degree of compensation. The electron concentration dependence of the band-gap energy measured by photoluminescence is interpreted as band-gap narrowing effect and evaluated by a simple relation. The photoluminescence peak positions of heavily compensated samples are shifted downward with respect to those of moderately compensated samples, and the down shift becomes larger at higher electron density. Based on analysis of photoluminescence spectra, these prominent behaviors are accounted for by band-edge potential fluctuation associated with inhomogeneous residual impurities.

Original languageEnglish
Pages (from-to)102-104
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number1
DOIs
Publication statusPublished - 1999 Dec 1
Externally publishedYes

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photoluminescence
optical properties
impurities
shift
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Band-gap narrowing and potential fluctuation in Si-doped GaN. / Lee, In-Hwan; Lee, J. J.; Kung, P.; Sanchez, F. J.; Razeghi, M.

In: Applied Physics Letters, Vol. 74, No. 1, 01.12.1999, p. 102-104.

Research output: Contribution to journalArticle

Lee, I-H, Lee, JJ, Kung, P, Sanchez, FJ & Razeghi, M 1999, 'Band-gap narrowing and potential fluctuation in Si-doped GaN', Applied Physics Letters, vol. 74, no. 1, pp. 102-104. https://doi.org/10.1063/1.122964
Lee, In-Hwan ; Lee, J. J. ; Kung, P. ; Sanchez, F. J. ; Razeghi, M. / Band-gap narrowing and potential fluctuation in Si-doped GaN. In: Applied Physics Letters. 1999 ; Vol. 74, No. 1. pp. 102-104.
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