Band-gap narrowing and potential fluctuation in Si-doped GaN

In Hwan Lee; J. J. Lee; P. Kung; F. J. Sanchez; M. Razeghi

doi:10.1063/1.122964

Band-gap narrowing and potential fluctuation in Si-doped GaN

In Hwan Lee, J. J. Lee, P. Kung, F. J. Sanchez, M. Razeghi

Research output: Contribution to journal › Article › peer-review

87 Citations (Scopus)

Abstract

We investigate the optical properties of two sets of Si-doped GaN epitaxial layers with different degree of compensation. The electron concentration dependence of the band-gap energy measured by photoluminescence is interpreted as band-gap narrowing effect and evaluated by a simple relation. The photoluminescence peak positions of heavily compensated samples are shifted downward with respect to those of moderately compensated samples, and the down shift becomes larger at higher electron density. Based on analysis of photoluminescence spectra, these prominent behaviors are accounted for by band-edge potential fluctuation associated with inhomogeneous residual impurities.

Original language	English
Pages (from-to)	102-104
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	1
DOIs	https://doi.org/10.1063/1.122964
Publication status	Published - 1999
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.122964

Cite this

@article{84c700739b4840678ec8e1c95324bef8,

title = "Band-gap narrowing and potential fluctuation in Si-doped GaN",

abstract = "We investigate the optical properties of two sets of Si-doped GaN epitaxial layers with different degree of compensation. The electron concentration dependence of the band-gap energy measured by photoluminescence is interpreted as band-gap narrowing effect and evaluated by a simple relation. The photoluminescence peak positions of heavily compensated samples are shifted downward with respect to those of moderately compensated samples, and the down shift becomes larger at higher electron density. Based on analysis of photoluminescence spectra, these prominent behaviors are accounted for by band-edge potential fluctuation associated with inhomogeneous residual impurities.",

author = "Lee, {In Hwan} and Lee, {J. J.} and P. Kung and Sanchez, {F. J.} and M. Razeghi",

year = "1999",

doi = "10.1063/1.122964",

language = "English",

volume = "74",

pages = "102--104",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "1",

}

TY - JOUR

T1 - Band-gap narrowing and potential fluctuation in Si-doped GaN

AU - Lee, In Hwan

AU - Lee, J. J.

AU - Kung, P.

AU - Sanchez, F. J.

AU - Razeghi, M.

PY - 1999

Y1 - 1999

N2 - We investigate the optical properties of two sets of Si-doped GaN epitaxial layers with different degree of compensation. The electron concentration dependence of the band-gap energy measured by photoluminescence is interpreted as band-gap narrowing effect and evaluated by a simple relation. The photoluminescence peak positions of heavily compensated samples are shifted downward with respect to those of moderately compensated samples, and the down shift becomes larger at higher electron density. Based on analysis of photoluminescence spectra, these prominent behaviors are accounted for by band-edge potential fluctuation associated with inhomogeneous residual impurities.

AB - We investigate the optical properties of two sets of Si-doped GaN epitaxial layers with different degree of compensation. The electron concentration dependence of the band-gap energy measured by photoluminescence is interpreted as band-gap narrowing effect and evaluated by a simple relation. The photoluminescence peak positions of heavily compensated samples are shifted downward with respect to those of moderately compensated samples, and the down shift becomes larger at higher electron density. Based on analysis of photoluminescence spectra, these prominent behaviors are accounted for by band-edge potential fluctuation associated with inhomogeneous residual impurities.

UR - http://www.scopus.com/inward/record.url?scp=0342984171&partnerID=8YFLogxK

U2 - 10.1063/1.122964

DO - 10.1063/1.122964

M3 - Article

AN - SCOPUS:0342984171

SN - 0003-6951

VL - 74

SP - 102

EP - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

ER -

Band-gap narrowing and potential fluctuation in Si-doped GaN

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this