Band line-up and mechanisms of current flow in n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions

A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; E. A. Kozhukhova; B. Luo; J. Kim; R. Mehandru; F. Ren; K. P. Lee; S. J. Pearton; A. V. Osinsky; P. E. Norris

doi:10.1063/1.1477273

Band line-up and mechanisms of current flow in n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, B. Luo, J. Kim, R. Mehandru, F. Ren, K. P. Lee, S. J. Pearton, A. V. Osinsky, P. E. Norris

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The properties of n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions (HJ) prepared by hydride vapor phase epitaxy (HVPE) on 4H SiC substrates are reported. It is shown that the GaN/p-SiC HJ is staggered type II with the conduction bandoffset and the valence bandoffset values, respectively, ΔE_c=-0.49eV and ΔE_v=0.65eV. When changing GaN for AlGaN with Al mole fraction of x=0.25-0.3 the band alignment becomes normal type I with ΔE_c=0.2eV and ΔE_v=0.6eV. Current-voltage characteristics of both heterojunctions bear evidence of strong tunneling via defect states. The tunneling was found to be more pronounced in the AlGaN/SiC HJs even though these showed no evidence of formation of dark line defects at the interface, in contrast to GaN/SiC.

Original language	English
Pages (from-to)	3352-3354
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	18
DOIs	https://doi.org/10.1063/1.1477273
Publication status	Published - 2002 May 6
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1477273

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@article{55fde340422e4cde83b12267e09ae06e,

title = "Band line-up and mechanisms of current flow in n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions",

abstract = "The properties of n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions (HJ) prepared by hydride vapor phase epitaxy (HVPE) on 4H SiC substrates are reported. It is shown that the GaN/p-SiC HJ is staggered type II with the conduction bandoffset and the valence bandoffset values, respectively, ΔEc=-0.49eV and ΔEv=0.65eV. When changing GaN for AlGaN with Al mole fraction of x=0.25-0.3 the band alignment becomes normal type I with ΔEc=0.2eV and ΔEv=0.6eV. Current-voltage characteristics of both heterojunctions bear evidence of strong tunneling via defect states. The tunneling was found to be more pronounced in the AlGaN/SiC HJs even though these showed no evidence of formation of dark line defects at the interface, in contrast to GaN/SiC.",

author = "Polyakov, {A. Y.} and Smirnov, {N. B.} and Govorkov, {A. V.} and Kozhukhova, {E. A.} and B. Luo and J. Kim and R. Mehandru and F. Ren and Lee, {K. P.} and Pearton, {S. J.} and Osinsky, {A. V.} and Norris, {P. E.}",

year = "2002",

month = may,

day = "6",

doi = "10.1063/1.1477273",

language = "English",

volume = "80",

pages = "3352--3354",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "18",

}

TY - JOUR

T1 - Band line-up and mechanisms of current flow in n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Kozhukhova, E. A.

AU - Luo, B.

AU - Kim, J.

AU - Mehandru, R.

AU - Ren, F.

AU - Lee, K. P.

AU - Pearton, S. J.

AU - Osinsky, A. V.

AU - Norris, P. E.

PY - 2002/5/6

Y1 - 2002/5/6

N2 - The properties of n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions (HJ) prepared by hydride vapor phase epitaxy (HVPE) on 4H SiC substrates are reported. It is shown that the GaN/p-SiC HJ is staggered type II with the conduction bandoffset and the valence bandoffset values, respectively, ΔEc=-0.49eV and ΔEv=0.65eV. When changing GaN for AlGaN with Al mole fraction of x=0.25-0.3 the band alignment becomes normal type I with ΔEc=0.2eV and ΔEv=0.6eV. Current-voltage characteristics of both heterojunctions bear evidence of strong tunneling via defect states. The tunneling was found to be more pronounced in the AlGaN/SiC HJs even though these showed no evidence of formation of dark line defects at the interface, in contrast to GaN/SiC.

AB - The properties of n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions (HJ) prepared by hydride vapor phase epitaxy (HVPE) on 4H SiC substrates are reported. It is shown that the GaN/p-SiC HJ is staggered type II with the conduction bandoffset and the valence bandoffset values, respectively, ΔEc=-0.49eV and ΔEv=0.65eV. When changing GaN for AlGaN with Al mole fraction of x=0.25-0.3 the band alignment becomes normal type I with ΔEc=0.2eV and ΔEv=0.6eV. Current-voltage characteristics of both heterojunctions bear evidence of strong tunneling via defect states. The tunneling was found to be more pronounced in the AlGaN/SiC HJs even though these showed no evidence of formation of dark line defects at the interface, in contrast to GaN/SiC.

UR - http://www.scopus.com/inward/record.url?scp=79956045093&partnerID=8YFLogxK

U2 - 10.1063/1.1477273

DO - 10.1063/1.1477273

M3 - Article

AN - SCOPUS:79956045093

SN - 0003-6951

VL - 80

SP - 3352

EP - 3354

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Band line-up and mechanisms of current flow in n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions

Abstract

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