Band line-up and mechanisms of current flow in n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, B. Luo, Ji Hyun Kim, R. Mehandru, F. Ren, K. P. Lee, S. J. Pearton, A. V. Osinsky, P. E. Norris

Research output: Contribution to journalArticle

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Abstract

The properties of n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions (HJ) prepared by hydride vapor phase epitaxy (HVPE) on 4H SiC substrates are reported. It is shown that the GaN/p-SiC HJ is staggered type II with the conduction bandoffset and the valence bandoffset values, respectively, ΔEc=-0.49eV and ΔEv=0.65eV. When changing GaN for AlGaN with Al mole fraction of x=0.25-0.3 the band alignment becomes normal type I with ΔEc=0.2eV and ΔEv=0.6eV. Current-voltage characteristics of both heterojunctions bear evidence of strong tunneling via defect states. The tunneling was found to be more pronounced in the AlGaN/SiC HJs even though these showed no evidence of formation of dark line defects at the interface, in contrast to GaN/SiC.

Original languageEnglish
Pages (from-to)3352-3354
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number18
DOIs
Publication statusPublished - 2002 May 6
Externally publishedYes

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heterojunctions
defects
bears
vapor phase epitaxy
hydrides
alignment
valence
conduction
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Kozhukhova, E. A., Luo, B., Kim, J. H., ... Norris, P. E. (2002). Band line-up and mechanisms of current flow in n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions. Applied Physics Letters, 80(18), 3352-3354. https://doi.org/10.1063/1.1477273

Band line-up and mechanisms of current flow in n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions. / Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Kozhukhova, E. A.; Luo, B.; Kim, Ji Hyun; Mehandru, R.; Ren, F.; Lee, K. P.; Pearton, S. J.; Osinsky, A. V.; Norris, P. E.

In: Applied Physics Letters, Vol. 80, No. 18, 06.05.2002, p. 3352-3354.

Research output: Contribution to journalArticle

Polyakov, AY, Smirnov, NB, Govorkov, AV, Kozhukhova, EA, Luo, B, Kim, JH, Mehandru, R, Ren, F, Lee, KP, Pearton, SJ, Osinsky, AV & Norris, PE 2002, 'Band line-up and mechanisms of current flow in n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions', Applied Physics Letters, vol. 80, no. 18, pp. 3352-3354. https://doi.org/10.1063/1.1477273
Polyakov, A. Y. ; Smirnov, N. B. ; Govorkov, A. V. ; Kozhukhova, E. A. ; Luo, B. ; Kim, Ji Hyun ; Mehandru, R. ; Ren, F. ; Lee, K. P. ; Pearton, S. J. ; Osinsky, A. V. ; Norris, P. E. / Band line-up and mechanisms of current flow in n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions. In: Applied Physics Letters. 2002 ; Vol. 80, No. 18. pp. 3352-3354.
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AU - Govorkov, A. V.

AU - Kozhukhova, E. A.

AU - Luo, B.

AU - Kim, Ji Hyun

AU - Mehandru, R.

AU - Ren, F.

AU - Lee, K. P.

AU - Pearton, S. J.

AU - Osinsky, A. V.

AU - Norris, P. E.

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N2 - The properties of n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions (HJ) prepared by hydride vapor phase epitaxy (HVPE) on 4H SiC substrates are reported. It is shown that the GaN/p-SiC HJ is staggered type II with the conduction bandoffset and the valence bandoffset values, respectively, ΔEc=-0.49eV and ΔEv=0.65eV. When changing GaN for AlGaN with Al mole fraction of x=0.25-0.3 the band alignment becomes normal type I with ΔEc=0.2eV and ΔEv=0.6eV. Current-voltage characteristics of both heterojunctions bear evidence of strong tunneling via defect states. The tunneling was found to be more pronounced in the AlGaN/SiC HJs even though these showed no evidence of formation of dark line defects at the interface, in contrast to GaN/SiC.

AB - The properties of n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions (HJ) prepared by hydride vapor phase epitaxy (HVPE) on 4H SiC substrates are reported. It is shown that the GaN/p-SiC HJ is staggered type II with the conduction bandoffset and the valence bandoffset values, respectively, ΔEc=-0.49eV and ΔEv=0.65eV. When changing GaN for AlGaN with Al mole fraction of x=0.25-0.3 the band alignment becomes normal type I with ΔEc=0.2eV and ΔEv=0.6eV. Current-voltage characteristics of both heterojunctions bear evidence of strong tunneling via defect states. The tunneling was found to be more pronounced in the AlGaN/SiC HJs even though these showed no evidence of formation of dark line defects at the interface, in contrast to GaN/SiC.

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