We investigated the composition dependence of the band structure of Ti-alloyed Al oxide (TiAlOx), tunneling magnetoresistance (TMR) behavior of the magnetic tunnel junctions (MTJs) with TiAlOx barrier, and the microstructural evolution of Ti-Al alloy films. X-ray absorption spectroscopy indicated that TiAlOx. had localized d states in the band gap below the conduction band. As the Ti concentration increased, the resistance × area value and effective barrier height of the MTJs were reduced owing to the band-gap reduction of TiAlOx caused by the formation of extra bands, mainly composed of Ti 3d orbitals, within the band gap. The TMR ratio increased up to 49% at 5.33 at. % Ti. Ti alloying enhanced the barrier/electrode interface uniformity and reduced microstructural defects. These structural improvements enhanced not only the TMR effect but also the thermal stability of the MTJs.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2005|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)