Band structure modification of AI oxide by Ti-alloying and magnetoresistance behavior of magnetic tunnel junctions with Ti-alloyed Al oxide barrier

Jin Oh Song, Seong Rae Lee, Hyun Joon Shin

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We investigated the composition dependence of the band structure of Ti-alloyed Al oxide (TiAlOx), tunneling magnetoresistance (TMR) behavior of the magnetic tunnel junctions (MTJs) with TiAlOx barrier, and the microstructural evolution of Ti-Al alloy films. X-ray absorption spectroscopy indicated that TiAlOx. had localized d states in the band gap below the conduction band. As the Ti concentration increased, the resistance × area value and effective barrier height of the MTJs were reduced owing to the band-gap reduction of TiAlOx caused by the formation of extra bands, mainly composed of Ti 3d orbitals, within the band gap. The TMR ratio increased up to 49% at 5.33 at. % Ti. Ti alloying enhanced the barrier/electrode interface uniformity and reduced microstructural defects. These structural improvements enhanced not only the TMR effect but also the thermal stability of the MTJs.

Original languageEnglish
Article number252501
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Issue number25
Publication statusPublished - 2005 Sep 13


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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