Bandgap engineered monodisperse and stable mercury telluride quantum dots and their application for near-infrared photodetection

Sungwoo Kim; Taehoon Kim; Sang Hyuk Im; Sang Il Seok; Kang Wook Kim; Sungjee Kim; Sang Wook Kim

doi:10.1039/c1jm12436f

Bandgap engineered monodisperse and stable mercury telluride quantum dots and their application for near-infrared photodetection

Sungwoo Kim, Taehoon Kim, Sang Hyuk Im, Sang Il Seok, Kang Wook Kim, Sungjee Kim, Sang Wook Kim

Research output: Contribution to journal › Article

21 Citations (Scopus)

Abstract

Bandgap-engineered monodisperse HgTe NCs of different sizes were synthesized by means of a facile temperature-control method, a non-aqueous and non-Te-gas process. The photo-physical properties of the synthesized NCs in a simple photovoltaic device were tested. It was shown that this cell is capable of processing signals up to the 100 kHz level below 3 dB and hence is suitable for use in NIR photodetection.

Original language	English
Pages (from-to)	15232-15236
Number of pages	5
Journal	Journal of Materials Chemistry
Volume	21
Issue number	39
DOIs	https://doi.org/10.1039/c1jm12436f
Publication status	Published - 2011 Oct 21
Externally published	Yes

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ASJC Scopus subject areas

Chemistry(all)
Materials Chemistry

Cite this

Kim, S., Kim, T., Im, S. H., Seok, S. I., Kim, K. W., Kim, S., & Kim, S. W. (2011). Bandgap engineered monodisperse and stable mercury telluride quantum dots and their application for near-infrared photodetection. Journal of Materials Chemistry, 21(39), 15232-15236. https://doi.org/10.1039/c1jm12436f

@article{b0680276791d46a9a16214d9948f461f,

title = "Bandgap engineered monodisperse and stable mercury telluride quantum dots and their application for near-infrared photodetection",

abstract = "Bandgap-engineered monodisperse HgTe NCs of different sizes were synthesized by means of a facile temperature-control method, a non-aqueous and non-Te-gas process. The photo-physical properties of the synthesized NCs in a simple photovoltaic device were tested. It was shown that this cell is capable of processing signals up to the 100 kHz level below 3 dB and hence is suitable for use in NIR photodetection.",

author = "Sungwoo Kim and Taehoon Kim and Im, {Sang Hyuk} and Seok, {Sang Il} and Kim, {Kang Wook} and Sungjee Kim and Kim, {Sang Wook}",

year = "2011",

month = "10",

day = "21",

doi = "10.1039/c1jm12436f",

language = "English",

volume = "21",

pages = "15232--15236",

journal = "Journal of Materials Chemistry",

issn = "0959-9428",

publisher = "Royal Society of Chemistry",

number = "39",

}

TY - JOUR

T1 - Bandgap engineered monodisperse and stable mercury telluride quantum dots and their application for near-infrared photodetection

AU - Kim, Sungwoo

AU - Kim, Taehoon

AU - Im, Sang Hyuk

AU - Seok, Sang Il

AU - Kim, Kang Wook

AU - Kim, Sungjee

AU - Kim, Sang Wook

PY - 2011/10/21

Y1 - 2011/10/21

N2 - Bandgap-engineered monodisperse HgTe NCs of different sizes were synthesized by means of a facile temperature-control method, a non-aqueous and non-Te-gas process. The photo-physical properties of the synthesized NCs in a simple photovoltaic device were tested. It was shown that this cell is capable of processing signals up to the 100 kHz level below 3 dB and hence is suitable for use in NIR photodetection.

AB - Bandgap-engineered monodisperse HgTe NCs of different sizes were synthesized by means of a facile temperature-control method, a non-aqueous and non-Te-gas process. The photo-physical properties of the synthesized NCs in a simple photovoltaic device were tested. It was shown that this cell is capable of processing signals up to the 100 kHz level below 3 dB and hence is suitable for use in NIR photodetection.

UR - http://www.scopus.com/inward/record.url?scp=80053339958&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80053339958&partnerID=8YFLogxK

U2 - 10.1039/c1jm12436f

DO - 10.1039/c1jm12436f

M3 - Article

AN - SCOPUS:80053339958

VL - 21

SP - 15232

EP - 15236

JO - Journal of Materials Chemistry

JF - Journal of Materials Chemistry

SN - 0959-9428

IS - 39

ER -

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10.1039/c1jm12436f