Bandgap shifting of an ultra-thin InGaAs/InP quantum well infrared photodetector via rapid thermal annealing

D. K. Sengupta, Sangsig Kim, H. C. Kuo, A. P. Curtis, K. C. Hsieh, S. G. Bishop, M. Feng, G. E. Stillman, S. D. Gunapala, S. V. Bandara, Y. C. Chang, H. C. Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate that SiO 2 cap rapid thermal annealing in ultra-thin p-type InGaAs/InP quantum wells can be used to produce large blue shifts of the band edge. A substantial bandgap blue shift, as much as 292.5 meV at 900 °C has been measured and the value of the bandgap shift can be controlled by the anneal time. Theoretical modeling of the intermixing effect on the energy levels is performed based on the effective bond-orbital method, and we obtain a very good fit to the photoluminescence data. Compared to the as-grown detector, the peak spectral response of the annealed detector was shifted to longer wavelength without any major degradation in the responsivity characteristics.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsM.C. Ozturk, F. Roozeboom, P.J. Timans, S.H. Pas
PublisherMRS
Pages385-390
Number of pages6
Volume525
Publication statusPublished - 1998
Externally publishedYes
EventProceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA
Duration: 1998 Apr 131998 Apr 15

Other

OtherProceedings of the 1998 MRS Spring Symposium
CitySan Francisco, CA, USA
Period98/4/1398/4/15

Fingerprint

Quantum well infrared photodetectors
Rapid thermal annealing
Energy gap
Detectors
Electron energy levels
Semiconductor quantum wells
Photoluminescence
Degradation
Wavelength

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Sengupta, D. K., Kim, S., Kuo, H. C., Curtis, A. P., Hsieh, K. C., Bishop, S. G., ... Liu, H. C. (1998). Bandgap shifting of an ultra-thin InGaAs/InP quantum well infrared photodetector via rapid thermal annealing. In M. C. Ozturk, F. Roozeboom, P. J. Timans, & S. H. Pas (Eds.), Materials Research Society Symposium - Proceedings (Vol. 525, pp. 385-390). MRS.

Bandgap shifting of an ultra-thin InGaAs/InP quantum well infrared photodetector via rapid thermal annealing. / Sengupta, D. K.; Kim, Sangsig; Kuo, H. C.; Curtis, A. P.; Hsieh, K. C.; Bishop, S. G.; Feng, M.; Stillman, G. E.; Gunapala, S. D.; Bandara, S. V.; Chang, Y. C.; Liu, H. C.

Materials Research Society Symposium - Proceedings. ed. / M.C. Ozturk; F. Roozeboom; P.J. Timans; S.H. Pas. Vol. 525 MRS, 1998. p. 385-390.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sengupta, DK, Kim, S, Kuo, HC, Curtis, AP, Hsieh, KC, Bishop, SG, Feng, M, Stillman, GE, Gunapala, SD, Bandara, SV, Chang, YC & Liu, HC 1998, Bandgap shifting of an ultra-thin InGaAs/InP quantum well infrared photodetector via rapid thermal annealing. in MC Ozturk, F Roozeboom, PJ Timans & SH Pas (eds), Materials Research Society Symposium - Proceedings. vol. 525, MRS, pp. 385-390, Proceedings of the 1998 MRS Spring Symposium, San Francisco, CA, USA, 98/4/13.
Sengupta DK, Kim S, Kuo HC, Curtis AP, Hsieh KC, Bishop SG et al. Bandgap shifting of an ultra-thin InGaAs/InP quantum well infrared photodetector via rapid thermal annealing. In Ozturk MC, Roozeboom F, Timans PJ, Pas SH, editors, Materials Research Society Symposium - Proceedings. Vol. 525. MRS. 1998. p. 385-390
Sengupta, D. K. ; Kim, Sangsig ; Kuo, H. C. ; Curtis, A. P. ; Hsieh, K. C. ; Bishop, S. G. ; Feng, M. ; Stillman, G. E. ; Gunapala, S. D. ; Bandara, S. V. ; Chang, Y. C. ; Liu, H. C. / Bandgap shifting of an ultra-thin InGaAs/InP quantum well infrared photodetector via rapid thermal annealing. Materials Research Society Symposium - Proceedings. editor / M.C. Ozturk ; F. Roozeboom ; P.J. Timans ; S.H. Pas. Vol. 525 MRS, 1998. pp. 385-390
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