Barrier lowering and leakage current reduction in Ni-AlGaN/GaN Schottky diodes with an oxygen-treated GaN cap layer

Hyeonseok Woo, Jongkyong Lee, Yongcheol Jo, Jaeseok Han, Jongmin Kim, Hyungsang Kim, Cheong Hyun Roh, Jun Ho Lee, Jung ho Park, Cheol Koo Hahn, Hyunsik Im

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We report on the effect of oxygen annealing for GaN surface on the Schottky barrier configuration and leakage current in Ni-AlGaN/GaN Schottky barrier diodes. After oxygen annealing, their turn-on voltage and reverse-bias leakage current characteristics are significantly improved due to a reduction in the Schottky barrier height (SBH) and suppression in the surface states respectively. Interface state density extracted from the Terman method was reduced by 2 orders of magnitude. X-ray photoelectron spectroscopy measurements show that the oxygen annealing induces Ga2O3 on the GaN surface. The formation of Ga2O3 reduces the interface state density as well as lowers the SBH through the modification of hybridized metal induced gap states.

Original languageEnglish
Pages (from-to)1027-1031
Number of pages5
JournalCurrent Applied Physics
Volume15
Issue number9
DOIs
Publication statusPublished - 2015 Jun 29

Fingerprint

Schottky diodes
caps
Leakage currents
Diodes
leakage
Interface states
Annealing
Oxygen
annealing
oxygen
Schottky barrier diodes
Surface states
X ray photoelectron spectroscopy
Metals
retarding
photoelectron spectroscopy
Electric potential
electric potential
configurations
metals

Keywords

  • AlGaN/GaN device
  • Interface state density
  • Oxygen annealing
  • Schottky barrier diode
  • Surface treatment
  • Turn-on voltage

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Barrier lowering and leakage current reduction in Ni-AlGaN/GaN Schottky diodes with an oxygen-treated GaN cap layer. / Woo, Hyeonseok; Lee, Jongkyong; Jo, Yongcheol; Han, Jaeseok; Kim, Jongmin; Kim, Hyungsang; Roh, Cheong Hyun; Lee, Jun Ho; Park, Jung ho; Hahn, Cheol Koo; Im, Hyunsik.

In: Current Applied Physics, Vol. 15, No. 9, 29.06.2015, p. 1027-1031.

Research output: Contribution to journalArticle

Woo, Hyeonseok ; Lee, Jongkyong ; Jo, Yongcheol ; Han, Jaeseok ; Kim, Jongmin ; Kim, Hyungsang ; Roh, Cheong Hyun ; Lee, Jun Ho ; Park, Jung ho ; Hahn, Cheol Koo ; Im, Hyunsik. / Barrier lowering and leakage current reduction in Ni-AlGaN/GaN Schottky diodes with an oxygen-treated GaN cap layer. In: Current Applied Physics. 2015 ; Vol. 15, No. 9. pp. 1027-1031.
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AU - Jo, Yongcheol

AU - Han, Jaeseok

AU - Kim, Jongmin

AU - Kim, Hyungsang

AU - Roh, Cheong Hyun

AU - Lee, Jun Ho

AU - Park, Jung ho

AU - Hahn, Cheol Koo

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AB - We report on the effect of oxygen annealing for GaN surface on the Schottky barrier configuration and leakage current in Ni-AlGaN/GaN Schottky barrier diodes. After oxygen annealing, their turn-on voltage and reverse-bias leakage current characteristics are significantly improved due to a reduction in the Schottky barrier height (SBH) and suppression in the surface states respectively. Interface state density extracted from the Terman method was reduced by 2 orders of magnitude. X-ray photoelectron spectroscopy measurements show that the oxygen annealing induces Ga2O3 on the GaN surface. The formation of Ga2O3 reduces the interface state density as well as lowers the SBH through the modification of hybridized metal induced gap states.

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