BaSm2Ti4O12 thin film for high-performance metal-insulator-metal capacitors

Beom Jong Kim, Young Hun Jeong, Bo Yun Jang, Jong Bong Lim, Sahn Nahm, Ho Jung Sun, Hwack Joo Lee

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5 Citations (Scopus)

Abstract

A high capacitance density of 4.84 fF/μm2 and a low leakage current density of 4.28 fA/pF·V were obtained for a 138-nm-thick crystalline BaSm2Ti4O12 (BST) film. The 100-nm-thick amorphous BST film exhibited a high capacitance density of 3.91 fF/μm2 and a low leakage current of 1.24 fA/pF·V. The crystalline BST film had quadratic and linear voltage coefficient of capacitance (VCC) of -295 ppm/V2 and 684 ppm/V, respectively, and a temperature coefficient of capacitance (TCC) of -136 ppm/°C at 100 kHz. The amorphous BST film also showed quadratic and linear VCCs of 48.6 ppm/ V2 and -738 ppm/V, respectively, with a low TCC of 169 ppm/ °C at 100 kHz.

Original languageEnglish
Pages (from-to)740-742
Number of pages3
JournalIEEE Electron Device Letters
Volume27
Issue number9
DOIs
Publication statusPublished - 2006 Sep 1

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Keywords

  • Capacitor
  • High-κ
  • Metal-insulator-metal (MIM)
  • Temperature coefficient of capacitance (TCC)
  • Voltage coefficient of capacitance (VCC)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Kim, B. J., Jeong, Y. H., Jang, B. Y., Lim, J. B., Nahm, S., Sun, H. J., & Lee, H. J. (2006). BaSm2Ti4O12 thin film for high-performance metal-insulator-metal capacitors. IEEE Electron Device Letters, 27(9), 740-742. https://doi.org/10.1109/LED.2006.881085