BaSm2Ti4O12 thin film for high-performance metal-insulator-metal capacitors

Beom Jong Kim, Young Hun Jeong, Bo Yun Jang, Jong Bong Lim, Sahn Nahm, Ho Jung Sun, Hwack Joo Lee

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

A high capacitance density of 4.84 fF/μm2 and a low leakage current density of 4.28 fA/pF·V were obtained for a 138-nm-thick crystalline BaSm2Ti4O12 (BST) film. The 100-nm-thick amorphous BST film exhibited a high capacitance density of 3.91 fF/μm2 and a low leakage current of 1.24 fA/pF·V. The crystalline BST film had quadratic and linear voltage coefficient of capacitance (VCC) of -295 ppm/V2 and 684 ppm/V, respectively, and a temperature coefficient of capacitance (TCC) of -136 ppm/°C at 100 kHz. The amorphous BST film also showed quadratic and linear VCCs of 48.6 ppm/ V2 and -738 ppm/V, respectively, with a low TCC of 169 ppm/ °C at 100 kHz.

Original languageEnglish
Pages (from-to)740-742
Number of pages3
JournalIEEE Electron Device Letters
Volume27
Issue number9
DOIs
Publication statusPublished - 2006 Sep 1

Fingerprint

Capacitors
Capacitance
Metals
Thin films
Amorphous films
Leakage currents
Crystalline materials
Thick films
Current density
Temperature
Electric potential

Keywords

  • Capacitor
  • High-κ
  • Metal-insulator-metal (MIM)
  • Temperature coefficient of capacitance (TCC)
  • Voltage coefficient of capacitance (VCC)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Kim, B. J., Jeong, Y. H., Jang, B. Y., Lim, J. B., Nahm, S., Sun, H. J., & Lee, H. J. (2006). BaSm2Ti4O12 thin film for high-performance metal-insulator-metal capacitors. IEEE Electron Device Letters, 27(9), 740-742. https://doi.org/10.1109/LED.2006.881085

BaSm2Ti4O12 thin film for high-performance metal-insulator-metal capacitors. / Kim, Beom Jong; Jeong, Young Hun; Jang, Bo Yun; Lim, Jong Bong; Nahm, Sahn; Sun, Ho Jung; Lee, Hwack Joo.

In: IEEE Electron Device Letters, Vol. 27, No. 9, 01.09.2006, p. 740-742.

Research output: Contribution to journalArticle

Kim, Beom Jong ; Jeong, Young Hun ; Jang, Bo Yun ; Lim, Jong Bong ; Nahm, Sahn ; Sun, Ho Jung ; Lee, Hwack Joo. / BaSm2Ti4O12 thin film for high-performance metal-insulator-metal capacitors. In: IEEE Electron Device Letters. 2006 ; Vol. 27, No. 9. pp. 740-742.
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AU - Jang, Bo Yun

AU - Lim, Jong Bong

AU - Nahm, Sahn

AU - Sun, Ho Jung

AU - Lee, Hwack Joo

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N2 - A high capacitance density of 4.84 fF/μm2 and a low leakage current density of 4.28 fA/pF·V were obtained for a 138-nm-thick crystalline BaSm2Ti4O12 (BST) film. The 100-nm-thick amorphous BST film exhibited a high capacitance density of 3.91 fF/μm2 and a low leakage current of 1.24 fA/pF·V. The crystalline BST film had quadratic and linear voltage coefficient of capacitance (VCC) of -295 ppm/V2 and 684 ppm/V, respectively, and a temperature coefficient of capacitance (TCC) of -136 ppm/°C at 100 kHz. The amorphous BST film also showed quadratic and linear VCCs of 48.6 ppm/ V2 and -738 ppm/V, respectively, with a low TCC of 169 ppm/ °C at 100 kHz.

AB - A high capacitance density of 4.84 fF/μm2 and a low leakage current density of 4.28 fA/pF·V were obtained for a 138-nm-thick crystalline BaSm2Ti4O12 (BST) film. The 100-nm-thick amorphous BST film exhibited a high capacitance density of 3.91 fF/μm2 and a low leakage current of 1.24 fA/pF·V. The crystalline BST film had quadratic and linear voltage coefficient of capacitance (VCC) of -295 ppm/V2 and 684 ppm/V, respectively, and a temperature coefficient of capacitance (TCC) of -136 ppm/°C at 100 kHz. The amorphous BST film also showed quadratic and linear VCCs of 48.6 ppm/ V2 and -738 ppm/V, respectively, with a low TCC of 169 ppm/ °C at 100 kHz.

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KW - Metal-insulator-metal (MIM)

KW - Temperature coefficient of capacitance (TCC)

KW - Voltage coefficient of capacitance (VCC)

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