BaTi4O9 thin film prepared by rf magnetron sputtering for microwave applications

Ho Jung Sun, Bo Yun Jang, Young Hun Jung, Suk Jin Lee, Sahn Nahm

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5 Citations (Scopus)


We attempted to produce BaTi4O9 dielectric thin films using conventional rf magnetron sputtering combined with subsequent rapid thermal processing (RTF). By adjusting growth and RTF temperatures, a single-phase BaTi4O9 film was successfully fabricated via 550°C deposition followed by 900°C annealing. The film exhibited superior physical and dielectric properties which were comparable to bulk ceramic behaviors. It showed good surface flatness and high density corresponding to 98% of the theoretical one. Its dielectric constant and dissipation factor at 6 GHz were 37 and 0.005, respectively.

Original languageEnglish
Pages (from-to)L628-L630
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number5 A
Publication statusPublished - 2004 May 1


  • BaTio
  • Dielectric property
  • Microwave
  • Thin film

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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