We attempted to produce BaTi4O9 dielectric thin films using conventional rf magnetron sputtering combined with subsequent rapid thermal processing (RTF). By adjusting growth and RTF temperatures, a single-phase BaTi4O9 film was successfully fabricated via 550°C deposition followed by 900°C annealing. The film exhibited superior physical and dielectric properties which were comparable to bulk ceramic behaviors. It showed good surface flatness and high density corresponding to 98% of the theoretical one. Its dielectric constant and dissipation factor at 6 GHz were 37 and 0.005, respectively.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Issue number||5 A|
|Publication status||Published - 2004 May 1|
- Dielectric property
- Thin film
ASJC Scopus subject areas
- Physics and Astronomy(all)