BaTi4O9 thin film prepared by rf magnetron sputtering for microwave applications

Ho Jung Sun, Bo Yun Jang, Young Hun Jung, Suk Jin Lee, Sahn Nahm

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We attempted to produce BaTi4O9 dielectric thin films using conventional rf magnetron sputtering combined with subsequent rapid thermal processing (RTF). By adjusting growth and RTF temperatures, a single-phase BaTi4O9 film was successfully fabricated via 550°C deposition followed by 900°C annealing. The film exhibited superior physical and dielectric properties which were comparable to bulk ceramic behaviors. It showed good surface flatness and high density corresponding to 98% of the theoretical one. Its dielectric constant and dissipation factor at 6 GHz were 37 and 0.005, respectively.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume43
Issue number5 A
Publication statusPublished - 2004 May 1

Fingerprint

Magnetron sputtering
magnetron sputtering
Microwaves
Rapid thermal processing
microwaves
Thin films
Dielectric films
flatness
thin films
Dielectric properties
dielectric properties
Permittivity
dissipation
Physical properties
physical properties
adjusting
Annealing
ceramics
permittivity
annealing

Keywords

  • BaTio
  • Dielectric property
  • Microwave
  • Thin film

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

BaTi4O9 thin film prepared by rf magnetron sputtering for microwave applications. / Sun, Ho Jung; Jang, Bo Yun; Jung, Young Hun; Lee, Suk Jin; Nahm, Sahn.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 43, No. 5 A, 01.05.2004.

Research output: Contribution to journalArticle

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